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土方 泰斗 ヒジカタ ヤスト

所属部署名 理工学研究科 数理電子情報部門 電話番号
職名 准教授 ■FAX番号
住所 埼玉県さいたま市桜区下大久保255 ■メールアドレス yasuto@opt.ees.saitama-u.ac.jp
■ホームページURL http://www.opt.ees.saitama-u.ac.jp/~yasuto/index-j.html

プロフィール

兼担研究科・学部

工学部 電気電子システム工学科電子システム工学

研究分野

半導体結晶工学
半導体光物性

現在の研究課題

 炭化ケイ素半導体(SiC)を用いた超低損失MOSデバイスの開発を目指し、SiC/酸化膜界面の構造やSiCの酸化メカニズムを解明することを目的に研究を行っている。  酸化膜をnmオーダーの傾斜型に加工する独自の技術を開発した(業績7,8)。傾斜状酸化膜に対して分光エリプソメトリによる評価を行った結果、界面付近には厚さ1nm程の高屈折率界面層が存在し、その屈折率の値は酸化プロセスに依存することを明らかにした(業績7)。また、X線(放射光)光電子分光法によって界面付近における組成遷移層の存在と(業績6)、その層の厚さが界面準位密度の値と良く対応することを明らかにした(業績5)。  一方、酸化炉と分光エリプソメータを組み合わせたその場観察装置を開発し、SiCの酸化過程を実時間観察することを試みた(業績2,4)。その結果、酸化膜が20nm以下の酸化初期において、酸化速度が著しく増速することを初めて明らかにした(業績2,4)。また、このようなSiCの酸化の振る舞いを説明する「界面SiおよびC原子放出モデル」を提案し、本モデルが数nmから数100nmの広い膜厚領域で酸化速度データを良く再現することを示した(業績1)。  現在、面方位や酸化条件によるSiCの酸化速度の違いを統一的に説明する酸化モデルの構築と、本モデルを用いた界面層形成と界面準位発生のメカニズム解明を目指して研究を進めている。

所属学会

所属学会
応用物理学会

学歴

出身大学院・研究科等
1999 , 東京工業大学 , 博士 , 総合理工学研究科 , 物理情報工学専攻 , 修了
取得学位
博士(工学) , 東京工業大学 , 高周波音場計測のための小型光ファイバプローブに関する研究

受賞学術賞

2019 , The best poster presentation award , The 2nd International Forum on Quantum Metrology and Sensing (IFQMS)
2019 , 2019年春季学術講演会Poster Award , 共著:土方 泰斗,松下 雄一郎,大島 武; 講演タイトル:同位体酸素を用いたSiC表面に形成される単一光子源の構造推定
2018 , Outstanding research achievement and contribution award , Author: Yasuto Hijikata; Title: Growth Rate Simulations of Oxide Films on Silicon Carbide based on the Si and C Emission Model
2018 , Student Award , Authors: Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, T. Ohshima, Y. Hijikata; Title: Creating single photon sources in SiC pn diodes using proton beam writing
2018 , 優秀ポスター賞 , 共著:土方 泰斗,牧野 高紘,佐藤 真一郎,山崎雄一,大島 武; 講演タイトル:SiC半導体が実現する室温電子駆動量子センサ
2005 , 研究奨励賞 , 覚張光一(共著者:窪木亮一、土方泰斗、矢口裕之、吉田貞史)
2000 , 電気学会論文発表賞

研究職歴等

研究職歴
2006 , 埼玉大学大学院理工学研究科准教授
2005 - 2006 , イタリア国立研究所(CNR)客員研究員
1999 , 埼玉大学工学部助手

研究活動業績

研究業績(著書・発表論文等)

著書
Silicon carbide (SiC): An extremely tough semiconducting material
Science Impact ltd., UK:49-51 202003
Yasuto Hijikata

Investigation of SiC/Oxide Interface Structures by Spectroscopic Ellipsometry" (Chapter 4) in "Advanced Silicon Carbide Devices and Processing
InTech:97-140 201509
ISBN:978-953-51-2168-8
Sadafumi Yoshida, Yasuto Hijikata and Hiroyuki Yaguchi

Physics and Technology of Silicon Carbide Devices
InTech 201301
Yasuto Hijikata

Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy
InTech:3-26 201301
Sadafumi Yoshida, Yasuto Hijikata and Hiroyuki Yaguchi

Thermal Oxidation Mechanism of Silicon Carbide
InTech:181-206 201301
Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi and Sadafumi Yoshida

SiC/GaNパワーデバイスの製造プロセスと放熱・冷却技術
技術情報協会:第1章第8節(14ペ-ジ) 201002

SiCパワーデバイス最新技術 =次世代パワーエレクトロニクス=
サイエンス&テクノロジー:23 2010

Properties and Applications of Silicon Carbide
INTECH open access publisher:12
Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida

論文
First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure
,Appl. Surf. Sci.,464:451-454 2019
Y.-i. Matsushita, Y. Furukawa, Y. Hijikata, and T. Ohshima

Macroscopic simulations of the SiC thermal oxidation process based on the Si and C emission model
,Diam. Relat. Mater.,92:253-258 2019
Yasuto Hijikata

Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing
,Mater. Sci. Forum,963:709-713 2019
Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, Y. Hijikata, T. Ohshima

Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
,J. Appl. Phys.,126:083105 2019
S.-i. Sato, N. Narahara, Y. Abe, Y. Hijikata, T. Umeda, T. Ohshima

Radiation response of negative gate biased SiC MOSFETs
,Materials,12:2741 2019
A. Takeyama, T. Makino, S. Okubo, Y. Tanaka, T. Yoshie, Y. Hijikata, T. Ohshima

Various Single Photon Sources Observed in SiC pin Diodes
,Mater. Sci. Forum,924:204-207 2018
H. Tsunemi, T. Honda, T. Makino, S. Onoda, S.-I. Sato, Y. Hijikata, and T. Ohshima

Room temperature electrical control of single photon sources at 4H-SiC surface
,ACS Photonics,5:3159-3165 2018
S.-i. Sato, T. Honda, T. Makino, Y. Hijikata, S.-Y. Lee, and T. Ohshima

Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing
,J. Mater. Res. [Invited Feature Paper],33:3355-3361 2018
Y. Yamazaki, Y. Chiba, T. Makino, S.-i. Sato, N. Yamada, T. Satoh, Y. Hijikata, K. Kojima, S.-Y. Lee, T. Ohshima

Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals
,J. Phys. Commun.,2:111003 2018
Y. Hijikata, T. Horii, Y. Furukawa, Y.-i. Matsushita, and T. Ohshima

Generation of stacking faults in 4H-SiC epilayer induced by oxidation
,Materials Research Express,5:a.n. 015903 2018
R. Asafuji and Y. Hijikata

Creation and Functionalization of Defects in SiC by Proton Beam Writing
,Mater. Sci. Forum,897:pp. 233-237 2017
T. Ohshima, T. Honda, S. Onoda, T. Makino, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov

Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide
,Nano Letters,17:pp. 2865-2870 2017
H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, and G. V. Astakhov

Optimum Structures for Gamma-ray Radiation Resistant SiC-MOSFETs
,Phys. Status Solidi A,214:1600425 2017
Satoshi Mitomo, Takuma Matsuda, Koichi Murata, Takashi Yokoseki, Takahiro Makino, Akinori Takeyama, Shi-nobu Onoda, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, and Yasuto Hijikata

Radiation Response of Silicon Carbide Metal-Oxide-Semiconductor Transistors in High Dose Region
,Japanese Journal of Applied Physics,55:01AD01 2016
T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie

Change in Characteristics of SiC MOSFETs by Gamma-ray Irradiation at High Temperature
,Materials Science Forum,858:pp. 860-863 2016
Takuma Matsuda, Takashi Tokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Hiroshi Abe, Akinori Takeyama, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima

Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs
,Materials Science Forum,858:pp. 868-871 2016
Yugo Kobayashi, Takashi Yokoseki, Takuma Matsuda, Satoshi Mitomo, Koichi Murata, Michihiro Hachisuka, Yasuyoshi Kaneko, Takahiro Makino, Akinori Takeyama, Shinobu Onoda, Takeshi Ohshima, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata

Unified theory of silicon carbide oxidation based on the Si and C emission model
,Journal of Physics D: Applied Physics,49:a.n. 225103 2016
Daisuke Goto and Yasuto Hijikata

Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers
,Superlattices and Microstructures,99:pp. 197-201 2016
T. Miyazaki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata

Improvement of radiation response of SiC MOSFETs under high temperature and humidity circumstance
,Japanese Journal of Applied Physics,55:104101 2016
Akinori Takeyama, Takuma Matsuda, Takashi Yokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Shinobu Onoda, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima

Impacts of Gate Bias and its Variation on Gamma-ray Irradiation Re-sistance of SiC MOSFETs
, Phys. Status Solidi A,214:160044 2016
Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Yokoseki, Takahiro Makino, Shi-nobu Onoda, Akinori Takeyama, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, and Yasuto Hijikata

Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate
,AIP Advances,5:067128 2015
Yasuto Hijikata, Ryosuke Asafuji, Ryotaro Konno, Yurie Akasaka, Ryo Shinoda

Control of intermediate-band configuration in GaAs:N δ-doped superlattice
,Japanese Journal of Applied Physics,54:08KA04 2015
Kazuki Osada, Tomoya Suzuki, Shuhei Yagi, Shunya Naitoh, Yasushi Shoji, Yasuto Hijikata, Yoshitaka Okada, and Hiroyuki Yaguchi

Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices
,Japanese Journal of Applied Physics,54:08KA07 2015
Tomoya Suzuki, Kazuki Osada, Shuhei Yagi, Shunya Naitoh, Yasushi Shoji, Yasuto Hijikata, Yoshitaka Okada, and Hiroyuki Yaguchi

Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
,AIP Advances,5:127116 2015
Yutaro Miyano, Ryosuke Asafuji, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi

Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry
,Materials Science Forum,821-823:371-374 2015
D. Goto, S. Yagi, Y. Hijikata, H. Yaguchi

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
,Materials Science Forum,821-823:327-330 2015
Y. Miyano, S. Yagi, Y. Hijikata, H. Yaguchi

Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-rays by Thermal Treatments
,Materials Science Forum,821-823:705-708 2015
T. Yokoseki, H. Abe, T. Makino, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata and T. Ohshima

Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry
,Journal of Applied Physics,117:095306 2015
D. Goto, Y. Hijikata, S. Yagi, and H. Yaguchi

Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy
,Japanese Journal of Applied Physics,54:051201 2015
R. G. Kim, S. Yagi, Y. Hijikata, and H. Yaguchi

Enhanced optical absorption due to E+-related band transition in GaAs:N delta-doped superlattices
,Applied Physics Express,7:102301 2014
Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeki Kuboya, Kentaro Onabe, Yoshitaka Okada, and Hiroyuki Yaguchi

Si emission into the oxide layer during oxidation of silicon carbide
,Materials Science Forum,778-780:553-556 2014
Y. Hijikata, Y. Akasaka, S. Yagi, and H. Yaguchi

Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys
,Physica Status Solidi A,211:752-755 2014
W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi

Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model
,Materials Science Forum,Vols. 740-742:833-836 2013
Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, and Sadafumi Yoshida

Molecular beam epitaxy of ErGaAs alloys on GaAs (001)
, Journal of Crystal Growth,378:85-87 2013
R. G. Jin, S. Yagi, Y. Hijikata, S. Kuobya, K. Onabe, R. Katayama, H. Yaguchi

RF-MBE growth of cubic InN nano-scale dots on cubic GaN
,Journal of Crystal Growth,378:454-458 2013
J. Suzuki, M. Orihara, S. Yagi, Y. Hijikata, H. Yaguchi

Analysis of Electronic Structures of Nitrogen Delta-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells
, IEEE J. PHOTOVOLTAICS,3:1287-1291 2013
S. Noguchi, S. Yagi, D. Sato, Y. Hijikata, K. Onabe, S. Kuboya, and H. Yaguchi

Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N Delta-Doped Superlattices
, Japanese Journal of Applied Physics,52:102302 2013
S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, and H. Yaguchi

Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy
,Physica Status Solidi C,10:1545-1548 2013
S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, and H. Yaguchi

Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs
,AIP Conference Prodeedings,1566:538-539 2013
K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi

Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
,Mater. Sci. Forum,706-709:2916-2921 2012
Kengo Takamiya, Yuta Endo, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama and Hiroyuki Yaguchi

RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)
,Phys. Status Solidi C,9:658-661 2012
Misao Orihara, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi

Micro-Photoluminescence study on the influence of oxidation on stacking faults in 4H-SiC epilayers
,Applied Physics Express,vol. 5:a.n. 051302 2012
Hikaru Yamagata, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
,Journal of Applied Physics,Vol. 112:a.n. 024502 2012
Keiko Kouda, Yasuto Hijikata, Shuhei Yagi, and Hiroyuki Yaguchi

Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-Doped GaAs
,Applied Physics Express,Vol. 5:a.n. 111201 2012
Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, and Hiroyuki Yaguchi

Theoretical studies for Si and C emission into SiC layer during oxidation
,Mater. Sci. Forum,679-680:429-432 2011
Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida

In-situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures
,Materials Science Forum,645-648:813-809 2010
Keiko Kouda, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida

Model calculations of SiC oxide growth rate at various oxidation temperatures based on the silicon and carbon emission model
,Materials Science Forum,645-648:809-812 2010
Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida

Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)
,Physica E,42:2529-2531 2010
T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe

RF-MBE growth of InN on 4H-SiC (0001) with off-angles
,Physica Satatus Solidi C,7:2016-2018 2010
Misao Orihara, Shin Takizawa, Takanori Sato, Yuuki Ishida, Sadafumi Yoshida, Yasuto Hijikata, and Hiroyuki Yaguchi

SiC半導体の酸化メカニズム解明に関する研究
,平成21年度総合研究機構プロジェクト研究成果報告書,8:63 2010
土方泰斗

Optical and Electrical Characterizations of 4H-SiC-Oxide interfaces by Spectroscopic Ellipsometry and Capacitance-Voltage measurements
,Applied Surface Science,255:8648-8653 2009
Hideki Hashimoto, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida

A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
,Applied Physics Express,2:021203 2009
Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida

Characterization of 4H-SiC-SiO2 Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer
,Materials Science Forum,615-617:505-508 2009
Hideyasu Seki, Takahiro Wakabayashi, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida

Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime
,Materials Science Forum,600-603:663-666 2009
Yasuto Hijikata, Takeshi Yamamoto, Hiroyuki Yaguchi and Sadafumi Yoshida

Model Calculation of SiC Oxide Growth Rate based on the Silicon and Carbon Emission Model
,Materials Science Forum,615-617:489-492 2009
Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida

Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In-Situ Spectroscopic Ellipsometry
,Materials Science Forum,615-617:509-512 2009
Toshiyuki Takaku, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In-situ Spectroscopic Ellipsometry
,Materials Science Forum,600-603:667-670 2009
Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida

Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
,Japanese Journal of Applied Physics,47(10):7803-7806 200810
Takeshi Yamamoto;Yasuto Hijikata;Hiroyuki Yaguchi;Sadafumi Yoshida

Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs
,Physica E-Low-Dimensional Systems & Nanostructures,40(6):2110-2112 200804
Y. Endo;Y. Hijikata;H. Yaguchi;S. Yoshida;M. Yoshita;H. Akiyama;F. Nakajima;R. Katayama;K. Onabe

等電子トラップを利用した単一光子発生素子の作製
,科学研究費補助金(基盤研究(c))研究成果報告書,平成17-18年度 200703
矢口裕之,吉田貞史,土方泰斗

Growth Rate Enhancement of (000 -1)-Face Silicon-carbide Oxidation in Thin Oxide Regime
,Japanese Journal of Applied Physics,46:L770-L772 2007
Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida

MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen
,Microelectronic Engineering,84:2804-2809 2007
A. Poggi, F. Moscatelli, Y. Hijikata, S. Solmi and R. Nipoti

酸化膜/炭化珪素半導体界面の窒素による界面順位密度低減のメカニズム解明
埼玉大学総合研究機構,総合研究機構研究プロジェクト研究成果報告書,第5号(18年度):592-593 2007
土方泰斗
A study on reduction mechanism of interface state density using nitridation of oxide/SiC semiconductor interface

Characterization of Oxide Films on 4H-SiC Epitaxial (000-1) Faces by High-Energy-Resolution Photoemission Spectroscopy: Comparison between Wet and Dry Oxidation
,Journal of Applied Physics,100:053710 2006
Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, and T. Hattori

Simultaneous Determination of Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Infrared Reflectance Spectroscopy
,Japanese Journal of Applied Physics,45:L1226-L1229 2006
Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida

Effect of Ar Post-Oxidation Annealing on Oxide-4H-SiC Interfaces Studied by Capacitance to Voltage Measurements and Photoemission Spectroscopy
,Journal of Vacuum Science Technology A,23(2):298-303 2005
Hijikata Y., Yaguchi H., Ishida Y., Yoshikawa M., and Yoshida S.

Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy
,Japanese Journal of Applied Physics,43:5151 -5156 2004
Narita K., Hijikata Y., Yaguchi H., Yoshida S., and Nakajima S.

ファブリペロー型光ファイバ超音波プローブの受音特性 (<特集>光-超音波エレクトロニクス論文特集)
電子情報通信学会,電子情報通信学会論文誌. C, エレクトロニクス,J86-C(12):1340-1341 200312
中村健太郎,土方泰斗
Receiving Characteristicb of a Fabry-Perot Cavity Fiber Optir Ultrasonic Probe

Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
電子情報通信学会,IEICE transactions on electronics,E86-C(4):688-688 200304
土方泰斗

炭化ケイ素基板上に成長させた1200℃ドライ酸化膜中の界面欠陥の電気特性とその熱アニーリング効果 (<特集>ワイドギャップ半導体とその電子デバイス応用論文小特集)
電子情報通信学会,電子情報通信学会論文誌. C, エレクトロニクス,J86-C(4):426-433 200304
土方泰斗,吉田貞史,吉川正人,石田夕起,直本保,伊藤久義,奥村元,高橋徹夫,土田秀一

Measurement of the depth profile of the refractive indices in the oxide films on SiC by spectroscopic ellipsometry
,Japanese Journal of Applied Physics,41:800-804 2002
T. Iida, Y. Tomioka, K. Yoshimoto, M. Midorikawa, H. Tukada, Y. Hijikata, M. Orihara, H. Yaguchi, M. Yoshikawa, Y. Ishida, and S. Yoshida

Composition Analysis of SiO2/SiC Interfaces by Electron Spectroscopic Measurements using Slope Shaped Oxide Films
,Applied Surface Science,184:161-166 2001
Y. Hijikata, H. Yaguchi, M. Yoshikawa and S. Yoshida

Wavelength-Division-Multiplexing in Fiber-Optic Micro-Probe Array for Ultrasonic Field Measurements (Special Issue on Optical Fiber Sensors)
電子情報通信学会,IEICE transactions on electronics,E83-C(3):293-297 200003
土方泰斗,中村健太郎

学会発表
NCVSi- Centers in Silicon Carbide and Their Photoluminescence Properties
Q-Leap,The 2nd International Forum on Quantum Metrology and Sensing (IFQMS) 201912
S.-i. Sato, T. Narahara, T. Higuchi, S. Onoda, Y. Yamazaki, Y. Hijikata, B. C. Gibson, A. D. Greentree, T. Ohshima

量子ビームを用いて形成した炭化ケイ素中の窒素・空孔複合欠陥の 近赤外発光特性
QST高崎サイエンスフェスタ2019事務局,QST高崎サイエンスフェスタ2019 201912
佐藤 真一郎, 楢原 拓真, 山崎 雄一, 樋口 泰成, 小野田 忍, 土方 泰斗, Brant C. Gibson, Andrew D. Greentree, 大島 武

PLイメージング法による異なるオフカット角を有する4H-SiC基板中の酸化誘起積層欠陥の観測
応用物理学会先進パワー半導体分科会,先進パワー半導体分科会第6回講演会 (広島) :IIB-7 201912
新田 翔司,土方 泰斗

4H-SiC中の窒素・空孔複合欠陥の形成量と窒素不純物濃度の関係
応用物理学会先進パワー半導体分科会,先進パワー半導体分科会第6回講演会 (広島):IIB-2 201912
楢原 拓真,佐藤 真一郎,児島 一聡,山﨑 雄一,土方 泰斗,大島 武

SiC結晶中シリコン空孔の光検出磁気共鳴信号にアニール温度が及ぼす影響
応用物理学会先進パワー半導体分科会,先進パワー半導体分科会第6回講演会 (広島):IIB-1 201912
千葉 陽史,山﨑 雄一,牧野 高絋,佐藤 真一郎,山田 尚人,佐藤 隆博,児島 一聡,土方 泰斗,大島 武

SiCデバイス内に作製したシリコン空孔の光・電気同時励起時における光学特性
応用物理学会先進パワー半導体分科会,先進パワー半導体分科会第6回講演会 (広島):IIA-3 201912
山﨑 雄一,千葉 陽史,佐藤 真一郎,牧野 高絋,山田 尚人,佐藤 隆博,土方 泰斗,児島 一聡,土田 秀一,星野 紀博,大島 武

Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment
International Conference on Silicon Carbide and Related Materials (ICSCRM),International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 (Kyoto):Tu-3B-07 201910
Y. Chiba, Y. Yamazaki, S.-i. Sato, T. Makino, N. Yamada, T. Satoh, Y. Hijikata, T. Ohshima

Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC
International Conference on Silicon Carbide and Related Materials (ICSCRM),International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 (Kyoto):Tu-P-12 201910
T. Narahara, S.-i. Sato, K. Kojima, Y. Yamazaki, Y. Hijikata, T. Ohshima

Optically detected magnetic resonance study of 3D arrayed silicon vacancies in SiC pn diodes
International Conference on Silicon Carbide and Related Materials (ICSCRM),International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 (Kyoto):Mo-3B-04 201909
Y. Yamazaki, Y. Chiba, S.-i. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, T. Ohshima

Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
International Conference on Silicon Carbide and Related Materials (ICSCRM),International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 (Kyoto):Mo-P-13 201909
S.-i. Sato, T. Narahara, S. Onoda, Y. Yamazaki, Y. Hijikata, B. C. Gibson, A. D. Greentree, T. Ohshima

SiCデバイス内の3次元配列シリコン空孔を用いた光検出磁場共鳴測定
応用物理学会,第80回応用物理学会秋季学術講演会 (札幌):20p-E311-17 201909
山崎 雄一郎,千葉 陽史,佐藤 真一郎,牧野 高紘,山田 尚人,佐藤 隆博,土方 泰斗,児嶋 一聡,土田 秀一,星乃 紀博,大島 武

SiC結晶中シリコン空孔のODMR信号に熱処理温度が及ぼす影響
応用物理学会,第80回応用物理学会秋季学術講演会 (札幌):20p-E311-16 201909
千葉 陽史,山崎 雄一郎,牧野 高紘,佐藤 真一郎,山田 尚人,佐藤 隆博,土方 泰斗,大島 武

4H-SiC中の窒素・空孔複合欠陥の形成における窒素不純物濃度の影響
応用物理学会,第80回応用物理学会秋季学術講演会 (札幌):20p-E311-15 201909
楢原 拓真,佐藤 真一郎,児島 一聡, 山﨑 雄一,土方 泰斗,大島 武

Below-Gap励起光を用いたFET構造4H-SiCの欠陥準位の検出
応用物理学会,第80回応用物理学会秋季学術講演会 (札幌):19p-PB4-3 201909
小野寺 奎, 鎌田 憲彦, 土方 泰斗, 武山 昭憲, 大島 武, 吉江 徹

Optical properties of simultaneous optically and electrically excited silicon vacancies in SiC pn diodes
QST,QST IRI Workshop 201909
Y. Yamazaki, Y. Chiba, S.-i. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, T. Ohshima

Creation of nitrogen-vacancy centers in SiC by ion irradiation
International Conference on Defects in Smiconductors (ICDS),30th International Conference on Defects in Smiconductors (ICDS-30) (Seattle, WA, USA) 201907
T. Ohshima, S.-i. Sato, T. Narahara, Y. Yamazaki, Y. Abe, T. Umeda, Y. Hijikata

Room temperature electronic-controllable quantum devices using single-photon sources in SiC crystals
The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM),2nd The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2019 (Beijing, China) 201907
Y. Hijikata, Y.-i. Matsushita, and T. Ohshima

Structure identification and characterization of the single-photon sources formed on the surface of silicon carbide crystal
Energy Materials and Nanotechnology on Epitaxy (EMN Meeting on Epitaxy),2019 Energy Materials and Nanotechnology on Epitaxy (EMN Meeting on Epitaxy 2019) (Amsterdam, Netherland):A40 201906
Y. Hijikata, Y.-i. Matsushita, and T. Ohshima

Position-Selective Silicon Vacancy Formation in Silicon Carbide Devices using Proton Beam Writing
Quantum 2019,Quantum 2019 201905
T. Ohshima, Y. Yamazaki, Y. Chiba, Y. Hijikata, K. Kojima, S.-Y. Lee, W. Kada

Room temperature electronic-driven quantum devices using single defects in silicon carbide semiconductors
IEEE,2019 International Seminar on Electron Devices Design and Production (SED-2019) (Prague, Czech) 201904
Yasuto Hijikata

同位体酸素を用いたSiC表面に形成される単一光子源の構造推定
応用物理学会,第66回応用物理学会春季学術講演会(大岡山):9a-PB3-5 201903
土方 泰斗,松下 雄一郎,大島 武

Creating single photon sources in SiC pn diodes using proton beam writing
Asia Pacific Society for Computing and Information Technology (APSCIT),2018 Conference on Intelligent Computing, Communication & Applied Technologies (CICCAT2018) (Zhuhai, China) 201812
Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, T. Ohshima, Y. Hijikata

Growth Rate Simulations of Oxide Films on Silicon Carbide based on the Si and C Emission Model
Asia Pacific Society for Computing and Information Technology (APSCIT),2018 Conference on Intelligent Computing, Communication & Applied Technologies (CICCAT2018) (Zhuhai, China) 201812
Yasuto Hijikata

Creation of electrically controllable radiation centers in SiC using proton beam writing
Europe. Conf. SiC and Related Materials (ECSCRM),ECSCRM2018 (Birmingham, UK):WE.01b.05 201809
Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, Y. Hijikata, T. Ohshima

Gate Structure Dependence of Charge Collection and Single Event Burnout Tolerance for SiC MOSFETs
IEEE Nuclear and Space Radiation Effects Conference,2018 NSREC (Hawaii, USA):PG2 201807
T. Makino, S. Takano, S. Harada, Y. Hijikata, and T. Ohshima

A Macroscopic Simulation of the SiC Thermal Oxidation Process based on the Si and C Emission Model
The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM),APCSCRM 2018 (Beijing, China) 201807
Yasuto Hijikata

Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer
European Materials Research Society (E-MRS),2018 Spring Meeting (Strasbourg, France):I.8.3 201806
Y. Hijikata, Y. Furukawa, Y.-i. Matsushita, and T. Ohshima

SiC半導体が実現する室温電子駆動量子センサ
量子生命科学研究会,第2回学術集会:P1 201805
土方 泰斗,牧野 高紘,佐藤 真一郎,山崎雄一,大島 武

Functionalization of Silicon Carbide by Particle Irradiation toward Quantum Devices
MRS,2017 MRS Fall meeting (Boston, USA):EM04.05.07 201712
T. Ohshima, T. Honda, H. Tsunemi, T. Makino, S.-i. Sato, S. Onoda, Y. Hijikata

Contraolled 3D Placement of Vacancy Spins for Quantum Applications in Silicon Carbide
Inter. Conf. SiC and Related Materials (ICSCRM2017),ICSCRM2017 (Washington D.C.) :FR.B1.4 201709
H. Kraus, D. Simin, C. Kasper, W. Kada, Y. Hijikata, C. J. Cochrane, T. Ohshima, V. Dyakonov, G. Astakhov

Enhanced Single Photon Emission near Stacking Fault in 4H-SiC Epilayer
Inter. Conf. SiC and Related Materials (ICSCRM2017),ICSCRM2017 (Washington D.C.):TH.B1.2 201709
Y. Hijikata, S. Akahori, and T. Ohshima

Various single photon sources observed in SiC pin diodes
Inter. Conf. SiC and Related Materials (ICSCRM2017),ICSCRM2017 (Washington D.C.) :TU.BP.10 201709
H. Tsunemi, T. Honda, T. Makino, S. Onoda, S-I. Sato, Y. Hijikata, and T. Ohshima

Creation of Single Photon Sources in Wide Bandgap Semiconductors by Ion Irradiation
26th Annual Meeting of MRS-J,MRS-J (Yokohama):D3-I20-001 201612
T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov

Heavy Ion Induced Charge Collection in SiC MOSFETs
26th Annual Meeting of MRS-J,2016MRS-J (Yokohama):D3-P21-010 201612
T. Makino, S. Takano, S. Harada, K. Kojima, Y. Hijikata, and T. Ohshima

Creation of single photon emitters in silicon carbide using particle beam irradiation
20th International Conference on Ion Beam Modification of Materials (IBMM2016),IBMM2016 (Wellington, New Zealand) 201611
T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov

Generation of stacking faults in 4H-SiC epilayer during oxidation
Energy Materials Nanotechnology (EMN) on Epitaxy 2016:A05 201609
Ryosuke Asafuji and Yasuto Hijikata

Creation and Functionalization of Defects in SiC by Irradiation and Thermal Treatment
11th European Conference on SiC and Related Materials (ECSCRM2016),ECSCRM2016 (Halkidiki, Greek):We3b-1 201609
T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov

Impacts of Gate Bias and its Variation on Gamma-ray Irradiation Resistance of SiC MOSFETs
European Materials Research Society (E-MRS),E-MRS2016 Spring Meeting (Lille, France):L.P.I.8 201605
Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Tokoseki, Takahiro Makino, Akinori Takeyama, Shinobu Onoda,Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Takeshi Ohshima , Yasuto Hijikata

Optimum Structures for Gamma-ray Radiation Resistant SiC-MOSFETs
European Materials Research Society (E-MRS),E-MRS2016 Spring Meeting (Lille, France):L.P.I.9 201605
S. Mitomo, T. Matsuda, K. Murata, T. Tokoseki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, S. Okubo, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata

Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model
9th European Conference on SiC and Related Matterials,ECSCRM2012, Saint-Petersburg, Russia,TuP-63 201209
Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida

Theoretical studies for Si and C emission into SiC layer during oxidation
8th European Conference on Silicon Carbide and Related Materials,ECSCRM2010, Oslo, Norway,Mo3-6:93 201008
Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida

その他
埼玉大学理工学研究科編「理学・工学の散歩道I」

埼玉大学研究シーズ集2018-19

埼玉大学研究シーズ集2016-17