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UENO Keiji

■Faculty: Graduate School of Science and Engineering ■TEL:
■Position: Professor ■FAX:
■Address: 255 Shimo-Okubo, Sakura-ku, Saitama City, Saitama 338-8570, JAPAN ■Mail Address:
■Web site:

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Assigned Class

Faculty of Science

Research

Books, Articles, etc.

Articles
"Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation"
,Jpn. J. Appl. Phys.,63:02SP49 2024
T. Xie, M. Ke, K. Ueno, K. Watanabe, T. Taniguchi, N. Aoki

"Work function modulation of Bi/Au bilayer system toward p-type WSe2 FET"
,ACS Appl. Electron. Mater.,6:144–149 2024
R. Nakajima, T. Nishimura, K. Ueno, K. Nagashio

"Coherent optical response driven by non-equilibrium electron-phonon dynamics in a layered transition-metal dichalcogenide"
,APL Materials,12:021102 2024
T. Fukuda, K. Makino, Y. Saito, P. Fons, A. Ando, T. Mori, R. Ishikawa, K. Ueno, J. Afalla, and M. Hase

"Single-gate MoS2 Tunnel FET with Thickness-Modulated Homojunction"
,ACS Appl. Mater. Interfaces,16:8993-9001 2024
T. Fukui, T. Nishimura, Y. Miyata, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio

"Terahertz emission from transient currents and coherent phonons in layered MoSe2 and WSe2"
,J. Appl. Phys. ,133:165103 2023
J. Afalla, J. Muldera, S. Takamizawa, T. Fukuda, K. Ueno, M. Tani, and M. Hase

"Fermi Pressure and Coulomb Repulsion Driven Rapid Hot Plasma Expansion in a van der Waals Heterostructure"
,Nano Lett.,23:4399-4405 2023
J. Choi, J. Embley, D.D. Blach, R. Perea-Causín, D. Erkensten, D.S. Kim, L. Yuan, W.Y. Yoon, T. Taniguchi, K. Watanabe, K. Ueno, E. Tutuc, S. Brem, E. Malic, X. Li, and L. Huang

"p-type conversion of WS2 and WSe2 by position-selective oxidation doping and its application in top gate transistors"
,ACS Appl. Mater. Interfaces,15:26977–26984 2023
R. Kato, H. Uchiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, E. Chen, K. Nagashio

"Ultrafast melting of charge-density wave fluctuations at room temperature in 1T-TiSe2 monitored under non-equilibrium conditions"
,Appl. Phys. Lett.,122:243101 2023
Y. Mizukoshi, T. Fukuda, Y. Komori, R. Ishikawa, K. Ueno and M. Hase

"Photoinduced Structural Dynamics of 2H-MoTe2 Under Extremely High-Density Excitation Conditions"
,J. Phys. Chem. C,127:13149-13156 2023
T. Fukuda, U. Ozaki, S. Jeong, Y. Arashida, K. En-ya, S. Yoshida, P. Fons, J. Fujita, K. Ueno, M. Hase, M. Hada

"Influence of Effective Mass on Carrier Concentration for PEDOT:PSS and S-PEDOT Thin Films Studied by Ellipsometry and Hall Measurement"
,J. Phys. Chem. C,127:13196-13206 2023
R. Sato, Y. Wasai, Y. Izumi, K. Ueno, and H. Shirai

"Soft X-ray Photoelectron Momentum Microscope for Multimodal Valence Band Stereography"
,Rev. Sci. Instrum. ,94:083701 2023
F. Matsui, K. Hagiwara, E. Nakamura, T. Yano, H. Matsuda, Y. Okano, S. Kera, E. Hashimoto, S. Koh, K. Ueno, T. Kobayashi, E. Iwamoto, K. Sakamoto, S. Tanaka, and S. Suga

"Silicon-van der Waals heterointegration for CMOS-compatible logic-in-memory design"
,Sci. Adv. ,9:eadk1597 2023
M.-P. Lee, C. Gao, M.-Y. Tsai, C.-Y. Lin, F.-S. Yang, H.-Y. Sung, C. Zhang, W. Li, J. Li, J. Zhang, K. Watanabe, T. Taniguchi, K. Ueno, K. Tsukagoshi, C.-H. Ho, J. Chu, P.-W. Chiu, M. Li, W.-W. Wu, and Y.-F. Lin

Enhanced contact properties of MoTe2-FET via laser-induced heavy doping
,Jpn. J. Appl. Phys.,62:SC1010 2023
T. Xie, K. Fukuda, M. Ke, P. Krüger, K. Ueno, G.-H. Kim, N. Aoki

Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics
,ACS Nano,17:6545-6554 2023
H. Ogura, S. Kawasaki, Z. Liu, T. Endo, M. Maruyama, Y. Gao, Y. Nakanishi, H.E. Lim, K. Yanagi, T. Irisawa, K. Ueno, S. Okada, K. Nagashio, Y. Miyata

Carrier Transport Properties in Few-Layer WS0.3Se1.7/(WOx)WS0.3Se1.7 Lateral p+-n Junctions Using a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFETs) Structure
,ACS Appl. Electron. Mater.,5:1546–1557 2023
A. Kuddus, K. Yokoyama, W. Fan, K. Ueno, H. Shirai

Mist chemical vapor deposition of crystalline MoS2 atomic layer films using sequential mist supply mode and its application in field-effect transistors"
,Nanotechnology,33: 045601 2022
A. Kuddus, A. Rajib, K. Yokoyama, T. Shida, K. Ueno and H. Shirai

"Quantitative Determination of Contradictory Band Gap Values of Bulk PdSe2 from Electrical Transport Properties"
,Adv. Func. Mater.,32:2108061 2022
W. Nishiyama, T. Nishimura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio

"Photo-induced Tellurium segregation in MoTe2"
,Phys. Stat. Solidi RRL,16:2100633 2022
T. Fukuda, R. Kaburauchi, Y. Saito, K. Makino, P. Fons, K. Ueno and M. Hase

"Mist chemical vapor deposition of Al1−xTixOy thin films and their application to a high dielectric material"
,J. Appl. Phys. ,131:105301 2022
A. Rajib, A. Kuddus, K. Yokoyama, T. Shida, K. Ueno, and H. Shirai

Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN
,ACS Appl. Mater. Interfaces,14:25659–25669 2022
T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio

Reversible Charge-polarity Control for Multioperation-mode Transistors Based on van der Waals Heterostructures
,Adv. Sci.,9:2106016 2022
C.-F. Chen, S.-H. Yang, M.-P. Lee, M.-Y. Tsai, F.-S. Yang, Y.-M. Chang, C.-Y. Lin, M. Li, K.-C. Lee, K. Ueno, Y. Shi, C. H. Lien, W.-W. Wu, P.-W. Chiu, S.-T. Lo, and Y.-F. Lin

Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering
,ACS Appl. Mater. Interfaces,14:41156–41164 2022
C.-Y. Lin, M.-P. Lee, Y.-M. Chang, Y.-T. Tseng, F. -S. Yang, M. Li, J.-C. Chen, C.-F. Chen, M.-Y. Tsai, Y.-C. Lin, K. Ueno, M. Yamamoto, S.-T. Lo, C.-H. Lien, P.-W. Chiu, K. Tsukagoshi, W.-W. Wu, Y.-F. Lin

Is band gap of bulk PdSe2 located really in far infrared region? Determination by Fourier Transform Photocurrent Spectroscopy
,Adv. Photonics Res.,3:2200231 2022
W. Nishiyama, T. Nishimura, M. Nishioka, K. Ueno, S. Iwamoto, and K. Nagashio

Emergence of interlayer coherence in twist-controlled graphene double layers
,Phys. Rev. Lett.,129:187701 2022
K. A. Lin, N. Prasad, G. W. Burg, B. Zou, K. Ueno, K. Watanabe, T. Taniguchi, A. H. MacDonald, and E. Tutuc

"Intrinsic Electronic Transport Properties and Carrier Densities in PtS2 and SnSe2: Exploration of n+-Source for 2D Tunnel FETs"
,Adv. Electron. Mater.,7:2100292 2021
Y. Sato, T. Nishimura, D. Duanfei, K. Ueno, K. Shinokita, K. Matsuda and K. Nagashio

Enhanced Exciton-Exciton Collisions in an Ultraflat Monolayer MoSe2 Prepared through Deterministic Flattening
,ACS Nano,15:1370–1377 2021
T. Hotta, A. Ueda, S. Higuchi, M. Okada, T. Shimizu, T. Kubo, K. Ueno, T. Taniguchi, K. Watanabe, R. Kitaura

Twist Angle-Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures
,Phys. Rev. Lett.,126:047401 2021
J. Choi, M. Florian, A. Steinhoff, D. Erben , K. Tran, D. S. Kim, L. Sun, J. Quan, R. Claassen, S. Majumder, J. A. Hollingsworth, T. Taniguchi, K. Watanabe, K. Ueno, A. Singh, G. Moody, F. Jahnke, and X. Li

AlOx Thin Films Synthesized by Mist Chemical Vapor Deposition, Monitored by a Fast-Scanning Mobility Particle Analyzer, and Applied as a Gate Insulating Layer in the Field-Effect Transistors
,ACS Appl. Electron. Mater.,3:658–667 2021
A. Rajib, A. Kuddus, T. Shida, K. Ueno, and H. Shirai

Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory
,ACS Nano,15:6658–6668 2021
T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio

Synthesis of AlOx thin films by atmospheric pressure mist chemical vapor deposition for surface passivation and electrical insulator layers
,J. Vac. Sci. Technol. A,38:033413 2020
A. Rajib, K. M. Enamul, S. Kurosu, T. Ukai, M. Tokuda, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai

Flat bands in twisted bilayer transition metal dichalcogenides
,Nature Physics,16:1093–1096 2020
Z. Zhang, Y. Wang, K. Watanabe, T. Taniguchi, K. Ueno, E. Tutuc and B.J. LeRoy

Effect of thermally annealed atomic-layer-deposited AlOx/chemical tunnel oxide stack layer at the PEDOT:PSS/n-type Si interface to improve its junction quality
,J. Appl. Phys.,128:045305 2020
Md E. Karim, Y. Nasuno, A. Kuddus, T. Ukai, S. Kurosu, M. Tokuda, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai

Facile and reversible carrier-type manipulation of layered MoTe2 toward long-term stable electronics
,ACS Appl. Mater. Interfaces,12:42918-42924 2020
M. Li, C.-Y. Lin, Y.-M. Chang, S.-H. Yang, M.-P. Lee, C.-F. Chen, K.-C. Lee, F.-S. Yang, Y. Chou, Y.-C. Lin, K. Ueno, Y. Shi, Y.-C. Chou, K. Tsukagoshi, Y.-F. Lin

Exciton diffusion in hBN-encapsulated monolayer MoSe2
,Phys. Rev. B,102:115424 2020
T. Hotta, S. Higuchi, A. Ueda, K. Shinokita, Y. Miyauchi, K. Matsuda, K. Ueno, T. Taniguchi, K. Watanabe, and R. Kitaura

Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage
,Small,16:2004907 2020
T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio

All 2D heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality
,ACS Appl. Mater. Interfaces,12:51598-51606 2020
K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio

"Self-assembled Fluorinated Polymer Passivation Layer for Efficient Perovskite Thin-film Solar Cells"
,Chem. Lett.,49:87-90 2020
Y. Moriya, R. Ishikawa, S. Akiyama, K. Ueno, H. Shirai

"Low-temperature growth of crystalline tungsten disulfide thin films by using organic liquid precursors"
,Jpn. J. Appl. Phys.,59:SCCC04 2020
Y. Ikeda and K. Ueno

"Improved efficiency of methylammonium-free perovskite thin film solar cells by fluorinated ammonium iodide treatment"
,Organic Electronics,78:105596 2020
R. Ishikawa, K. Ueno, H. Shirai

"Investigation of laser-induced-metal phase of MoTe2 and its contact property via scanning gate microscopy"
,Nanotechnology,31:205205 2020
K. Sakanashi, H. Ouchi, K. Kamiya, P. Krüger, K. Miyamoto, T. Omatsu, K. Ueno, K. Watanabe, T. Taniguchi, J. Bird, N. Aoki

"Ultrafast dynamics of the low frequency shear phonon in 1T'-MoTe2"
,Appl. Phys. Lett.,116:093103 2020
T. Fukuda, K. Makino, Y. Saito, P. Fons, A.V. Kolobov, K. Ueno, and M. Hase

Site-dependence of relationships between photoluminescence and applied electric field in monolayer and bilayer molybdenum disulfide
,Jpn. J. Appl. Phys.,58:015001 2019
J. Nozaki, H. Nishidome, M. Maruyama, S. Okada, S. Kusaba, K. Tanaka, K. Ueno, Y. Yomogida, and K. Yanagi

Gate-Tunable Thermal Metal-Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor
,ACS Appl. Mater. Interfaces,11:3224-3230 2019
M. Yamamoto, R. Nouchi, T. Kanki, A. Hattori, K. Watanabe, T. Taniguchi, K. Ueno, H. Tanaka

遷移金属ダイカルコゲナイドの構造，物性，原子膜形成法
,化学と工業,72:335-337 2019
上野啓司

"Highly crystalline large-grained perovskite films using two additives without an antisolvent for high-efficiency solar cells"
,Thin Solid Films,679:27-34 2019
R. Ishikawa, K. Ueno and H. Shirai

"Dimensionality reduction and band quantization induced by potassium intercalation in 1T-HfTe2
,Phys. Rev. Mater. ,3:071001(R) 2019
Y. Nakata, K. Sugawara, A. Chainani, K. Yamauchi, K. Nakayama, S. Souma, P.-Y. Chuang, C.-M. Cheng, T. Oguchi, K. Ueno, T. Takahashi, and T. Sato

"Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides"
,ACS Appl. Mater. Interfaces,11:36871-36879 2019
M. Yamamoto, R. Nouchi, T. Kanki, S. Nakaharai, A. N. Hattori, K. Watanabe, T. Taniguchi, Y. Wakayama, K. Ueno, and H. Tanaka

"Role of the solvent in large crystal grain growth of inorganic-organic halide FA0.8Cs0.2PbIxBr3−x perovskite thin films monitored by ellipsometry
,J. Vac. Sci. & Technol. B,37:062401 2019
K. Kawamura, R. Ishikawa, Y. Wasai, N. Nabatova-Gabain, S. Kurosu, T. Ukai, M. Tokuda, Y. Fujii, T. Hanajiri, K. Ueno, and H. Shirai

"Selective oxidation of the surface layer of bilayer WSe2 by laser heating"
,Jpn. J. Appl. Phys. ,58:120903 2019
H. Shioya, K. Tsukagoshi, K. Ueno, and A. Oiwa

"Oxygen-sensitive layered MoTe2 channels for environmental detection"
,ACS Appl. Mater. Interfaces,11:47047-47053 2019
S.-H Yang, C.-Y. Lin, Y.-M. Chang, M. Li, K.-C. Lee, C.-F. Chen, F.-S. Yang, C.-H Lien, K. Ueno, K. Watanabe, T. Taniguchi, K. Tsukagoshi, Y.-F. Lin

Anisotropic Band Splitting in Monolayer NbSe2: Implications for Superconductivity and Charge Density Wave
,npj 2D Materials and Applications,2:12 2018
Y. Nakata, K. Sugawara, S. Ichinokura, Y. Okada, T. Hitosugi, T. Koretsune, K. Ueno, S. Hasegawa, T. Takahashi, and T. Sato

Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application
,MRS Advances ,3:2809-2814 2018
N. Higashitarumizu, H. Kawamoto, K. Ueno and Kosuke Nagashio

Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer
,Appl. Phys. Lett. ,112: 181902 (5 pages) 2018
M. Yamamoto, K. Ueno and K. Tsukagoshi

Ultrathin Bismuth Film on 1T-TaS2: Structural Transition and Charge-Density-Wave Proximity Effect
,Nano Lett. ,18:3235-3240 2018
K. Yamada, S. Souma, K. Yamauchi, N. Shimamura, K. Sugawara, C. Trang, T. Oguchi, K. Ueno, T. Takahashi, T. Sato

Fabrication of [CH(NH2)2]0.8Cs0.2PbI3 perovskite thin films for n-i-p planar-structure solar cells by a one-step method using 1-cyclohexyl-2-pyrrolidone as an additive
,Chem. Lett.,47:905-908 2018
R. Ishikawa, K. Ueno and H. Shirai

2-Dimensional Tunnel FETs with a Stable Charge-Transfer-Type p+-WSe2 Source
,Adv. Electron. Mater.,4:1800207 2018
J. He, N. Fang, K. Nakamura, K. Ueno, T. Taniguchi, K. Watanabe, and K. Nagashio

Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation
,Nanoscale,10:22474-22483 2018
N. Higashitarumizu, H. Kawamoto, M. Nakamura, K. Shimamura, N. Ohashi, K. Ueno and K. Nagashio

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping
, Adv. Mater.,30:1706995 2018
Y.-M. Chang, S.-H. Yang, C.-Y. Lin, C.-H. Chen, C.-H. Lien, W.-B. Jian, K. Ueno, Y.-W. Suen, K. Tsukagoshi and Y.-F. Lin

異なる層状物質を自由に積層し，新物質を生み出す
,日本物理学会誌,73:74-75 2018
上野啓司

Sensitive Phonon-Based Probe for Structure Identification of 1T′ MoTe2"
, J. Am. Chem. Soc.,139 2017
L. Zhou, S. Huang, Y. Tatsumi, L. Wu, H. Guo, Y.-Q. Bie, K. Ueno, T. Yang, Y. Zhu, J. Kong, R. Saito, and M. Dresselhaus

Barium hydroxide hole blocking layer for front- and back-organic/crystalline Si heterojunction solar cells
, J. Appl. Phys.,122:055101 (8 pages) 2017
J. Hossain, K. Kasahara, D. Harada, A. T. M. S. Islam, R. Ishikawa, K. Ueno, T. Hanajiri, Y. Nakajima, Y. Fujii, M. Tokuda, and H. Shirai

Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2
,2D Materials,4:041007 (10 pages) 2017
Y. Yamasaki, R. Moriya, M. Arai, S. Masubuchi, S. Pyon, T. Tamegai, K. Ueno and T. Machida

Fabrication of {CH(NH2)2}1-xCsxPbI3 perovskite thin films by two-step method and its application to thin film solar cells
,Chem. Lett.,46:612-615 2017
R. Ishikawa, K. Ueno, and H. Shirai

Effect of substrate bias on mist deposition of conjugated polymer on textured crystalline-Si for efficient c-Si/organic heterojunction solar cells
,Phys. Status Solidi A ,213:1922–1925 2016
T. Ohki, K. Ichikawa, J. Hossain, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai

Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi Level Pinning
,ACS Appl. Mater. Interfaces ,8 :14732–14739 2016
S. Nakaharai, M. Yamamoto, K. Ueno, and K. Tsukagoshi

Correlation between Fine Structure of Spin-Coated PEDOT:PSS and Photovoltaic Performance of Organic/Crystalline-Silicon Heterojunction Solar Cells
,J. Appl. Phys.,120:033103 (7 pages) 2016
S. Funada, T. Ohki, Q. Liu, J. Hossain, Y. Ishimaru, K. Ueno, and H. Shirai

Monolayer 1T-NbSe2 as a Mott insulator"
,NPG Asia Materials,8:e321 (5 pages) 2016
Y. Nakata, K. Sugawara, R. Shimizu, Y. Okada, P. Han, T. Hitosugi, K. Ueno, T. Sato and T. Takahashi

Synthesis of High-Quality Large-Area Homogenous 1T′ MoTe2 from Chemical Vapor Deposition
,Adv. Mater.,28:9526–9531 2016
L. Zhou, A. Zubair, Z. Wang, X. Zhang, F. Ouyang, K. Xu, W. Fang, K. Ueno, J. Li, T. Palacios, J. Kong, and M. S. Dresselhaus

Role of Isopropyl Alcohol Solvent in the Synthesis of Organic–Inorganic Halide CH(NH2)2PbIxBr3–x Perovskite Thin Films by a Two-Step Method
,J. Phys. Chem. C,120:25371–25377 2016
T. Yamanaka, K. Masumori, R. Ishikawa, K. Ueno, and H. Shirai

Nafion-Modified PEDOT:PSS as a Transparent Hole-Transporting Layer for High-Performance Crystalline-Si/Organic Heterojunction Solar Cells with Improved Light Soaking Stability
,ACS Appl. Mater. Interfaces,8:31926–31934 2016
J. Hossain, Q. Liu, T. Miura, K. Kasahara, D. Harada, R. Ishikawa, K. Ueno, and H. Shirai

Solution-processed crystalline silicon double-heterojunction solar cells
,Appl. Phys. Express,9:022301 (4 pages) 2016
R. Devkota, Q. Liu, T. Ohki, J. Hossain, K. Ueno, and H. Shirai

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts
,Nano Lett.,16:2720-2727 2016
M. Yamamoto, S. Nakaharai, K. Ueno, and K. Tsukagoshi

Efficient organic/polycrystalline silicon hybrid solar cells
,Nano Energy,11:260-266 2015
Q. Liu, T. Ohki, D. Liu, H. Sugawara, R. Ishikawa, K. Ueno, and H. Shirai

Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2
,Nano Letters,15:2067-2073 2015
M. Yamamoto, S. Dutta, S. Aikawa, S. Nakaharai, K. Wakabayashi, M. Fuhrer, K. Ueno, and K. Tsukagoshi

塗布グラフェン電極を用いた有機/無機ハイブリッドCMOS素子の形成
,電気学会論文誌C（電子・情報・システム部門誌）,135:156-159 2015
菅沼洸一，白井肇，上野啓司

Double resonance Raman modes in mono- and few-layer MoTe2
,Phys. Rev. B,91:205415 (8 pages) 2015
H. Guo, T. Yang, M. Yamamoto, L. Zhou, R. Ishikawa, K. Ueno, K. Tsukagoshi, Z. Zhang, M. Dresselhaus, and R. Saito

Highly Efficient Solution-Processed Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate)/Crystalline-Silicon Heterojunction Solar Cells with Improved Light-Induced Stability
,Adv. Ener. Mater.,5:1500744 2015
Q. Liu, R. Ishikawa, S. Funada, K. Ueno, and H. Shirai

Electrostatically Reversible Polarity of Ambipolar α‐MoTe2 Transistors
,ACS Nano,9:5976-5983 2015
S. Nakaharai, M. Yamamoto, K. Ueno, Y.-F. Lin, S.-L. Li, and K. Tsukagoshi

Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors
,Adv. Mater.,27:6612–6619 2015
Y.-F. Lin, Y. Xu, C.-Y. Lin, Y.-W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno, and K. Tsukagoshi

Changes in structure and chemical composition of α-MoTe2 and β-MoTe2 during heating in vacuum conditions
,Appl. Phys. Express,8:095201 (4 pages) 2015
K. Ueno and K. Fukushima

Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2
,J. Am. Chem. Soc.,137:11892–11895 2015
L. Zhou, K. Xu, A. Zubair, A. Liao, W. Fang, F. Ouyang, Y.-H. Lee, K. Ueno, R. Saito, T. Palacios, J. Kong, and M. S. Dresselhaus

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide
,Appl. Phys. Lett.,107 :103107 (4 pages) 2015
M. Arai, R. Moriya, N. Yabuki, S. Masubuchi K. Ueno, and T. Machida

Introduction to the Growth of Bulk Single Crystals of Two-Dimensional Transition-Metal Dichalcogenides
,J. Phys. Soc. Jpn.,84:121015 (6 pages) 2015
K. Ueno

Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
,Advanced Materials,26:3263-3269 2014
Y.-F. Lin, Y. Xu, S.-T. Wang, S.-L. Li, M. Yamamoto, A. Aparecido-Ferreira, W. Li, H. Sun, S. Nakaharai, W.-B. Jian, K. Ueno, and K. Tsukagoshi

Self-assembled silver nanowires as top electrode for poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)/n-silicon solar cell
,Thin Solid Films,558:306-310 2014
I. Khatri, A. Hoshino, F. Watanabe, Q. Liu, R. Ishikawa, K. Ueno, H. Shirai

Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe2
, ACS Nano,8:3895–3903 2014
M. Yamamoto, S. T. Wang, M. Ni, Y.-F. Lin, S.-L. Li, S. Aikawa, W.-B. Jian, K. Ueno, K. Wakabayashi, and K. Tsukagoshi

Real-time measurement of optical anisotropy during film growth using a chemical mist deposition of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
,J. Appl. Phys.,115:123514 2014
T. Hiate, N. Miyauchi, Q. Liu, R. Ishikawa, K. Ueno, and H. Shirai

Green-tea modified multiwalled carbon nanotubes for efficient poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate)/n-silicon hybrid solar cell
,Appl. Phys. Lett. ,102:063508 2013
I. Khatri, Z. Tang, Q. Liu, R. Ishikawa, K. Ueno, and H. Shirai
電子ジャーナル

Effects of molybdenum oxide molecular doping on the chemical structure of poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) and on carrier collection efficiency of silicon/PEDOT:PSS heterojunction solar cells
,Appl. Phys. Lett.,102:183503 2013
Q. Liu, I. Khatri, R. Ishikawa, K. Ueno, and H. Shirai
電子ジャーナル

Optical anisotropy in solvent-modified poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) and its effect on the photovoltaic performance of crystalline silicon/organic heterojunction solar cells
,Appl. Phys. Lett.,102:243902 2013
Q. Liu, T. Imamura, T. Hiate, I. Khatri, Z. Tang, R. Ishikawa, K. Ueno, and H. Shirai
電子ジャーナル

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits
, Nanoscale,5:9666-9670 2013
H. S. Song, S. L. Li, L. Gao, Y. Xu, K. Ueno, J. Tang, Y. B. Cheng and K. Tsukagoshi

Improved photovoltaic performance of crystalline-Si/organic Schottky junction solar cells using ferroelectric polymers
,App. Phys. Lett.,103:163503 2013
Q. Liu, I. Khatri, R. Ishikawa, A. Fujimori, K. Ueno, K. Manabe, H. Nishino and H. Shirai

Electrospray-Deposited Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) for Poly(3-hexylthiophene):Phenyl-C61-Butyric Acid Methyl Ester Photovoltaic Cells
,Jpn. J. Appl. Phys.,51:10NE30 2012
T. Hiate, T. Ino, R. Ishikawa, K. Ueno, and H. Shirai
電子ジャーナル

Increased Organic Photovoltaic Cell Efficiency by Incorporating a Nonionic Fluorinated Surfactant Cathode Interlayer
,Appl. Phys. Express,5:121601 2012
R. Ishikawa, H. Shirai, and K. Ueno
電子ジャーナル

Top-contacted Organic Field-effect Transistors with Graphene Electrodes Prepared by Laminate Transfer method
,Appl. Phys. Express,5:125104 2012
K. Suganuma, T. Gotou, and K. Ueno
電子ジャーナル

Efficient Organic Photovoltaic Cells Using MoO3 Hole-Transporting Layers Prepared by Simple Spin-Cast of Its Dispersion Solution in Methano
,Jpn. J. Appl. Phys.,52:020202 2012
M. Kishi, Y. Kubo, R. Ishikawa, H. Shirai, and K. Ueno
電子ジャーナル

Highly efficient crystalline silicon/Zonyl fluorosurfactant-treated organic heterojunction solar cells
,Appl. Phys. Lett.,100:183901 2012
Q. Liu, M. Ono, Z. Tang, R. Ishikawa, K. Ueno, and H. Shirai
電子ジャーナル

Ionic liquid-mediated epitaxy of high-quality C60 crystallites in a vacuum
,CrystEngComm. ,14:4939-4945 2012
Y. Takeyama, S. Maruyama, H. Taniguchi, M. Itoh, K. Ueno, and Y. Matsumoto
電子ジャーナル

Electrospray Deposition of Poly(3-hexylthiophene) Films for Crystalline Silicon/Organic Hybrid Junction Solar Cells
,Jpn. J. Appl. Phys. ,51:061602 2012
T. Ino, M. Ono, N. Miyauchi, Q. Liu, Z. Tang, R. Ishikawa, K. Ueno, and H. Shirai
電子ジャーナル

Real-time ellipsometric characterization of the initial growth stage of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) films by electrospray deposition using N,N-dimethylformamide solvent solution
,J. Non-Crystalline Solids,358:2520-2524 2012
T. Ino, T. Hiate, T. Fukuda, K. Ueno, and H. Shirai
電子ジャーナル

Crystalline Silicon/Graphene Oxide Hybrid Junction Solar Cells
,Jpn. J. Appl. Phys.,51:10NE22 2012
Q. Liu, F. Wanatabe, A. Hoshino, R. Ishikawa, T. Gotou, K. Ueno, and H. Shirai
電子ジャーナル

Atmospheric-pressure argon plasma etching of spin-coated 3,4-polyethylenedioxythiophene:polystyrenesulfonic acid (PEDOT:PSS) films for cupper phtalocyanine (CuPc)/C60 heterojunction thin-film solar cells
,Thin Solid Films,519:6834 2011
T. Ino, T. Hayshi, K. Ueno, and H. Shirai
電子ジャーナル

Efficient Organic Photovoltaic Cells Using Hole-Transporting MoO3 Buffer Layers Converted from Solution-Processed MoS2 Films
,Jpn. J. Appl. Phys.,50:71604 2011
S. Kato, R. Ishikawa, Y. Kubo, H. Shirai, and K. Ueno
電子ジャーナル

Bulk-heterojunction organic photovoltaic cell fabricated by electrospray deposition method using mixed organic solvent
,Phys. Status Solidi RRL,5:229 2011
T. Fukuda, K. Takagi, T. Asano, Z. Honda, N. Kamata, K. Ueno, H. Shirai, J. Ju, Y. Yamagata, and Y. Tajima
電子ジャーナル

Real-Time Ellipsometric Characterization of Initial Growth Stage of Poly(3,4-ethylene dioxythiophene):Poly(styrene sulfonic acid) Films by Electrospray Deposition
,Jpn. J. Appl. Phys.,50:81603 2011
T. Ino, T. Asano, T. Fukuda, K. Ueno, and H. Shirai
電子ジャーナル

Depth Profile Characterization of Spin-Coated Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) Films for Thin-Film Solar Cells during Argon Plasma Etching by Spectroscopic Ellipsometry
,Jpn. J. Appl. Phys.,50:08JG02 2011
T. Ino, T. Hayashi, K. Ueno, and H. Shirai
電子ジャーナル

Surface Modification of Poly(3,4-ethylene dioxthiophene):Poly(styrene sulfonic acid) (PEDOT:PSS) Films by Atmospheric-Pressure Argon Plasma for Organic Thin-Film Solar Cells
,J. Nanosci. Nanotech.,11:8035 2011
T. Ino, T. Hayashi, T. Fukuda, K. Ueno, and H. Shirai
電子ジャーナル

Efficient Crystalline Si/Poly(ethylene dioxythiophene):Poly(styrene sulfonate):Graphene Oxide Composite Heterojunction Solar Cells
, Appl. Phys. Express,5:32301 2011
M. Ono, Z. Tang, R. Ishikawa, T. Gotou, K. Ueno, and H. Shirai
電子ジャーナル

Fabrication of Transparent and Flexible Organic Field-Effect Transistors with Solution-Processed Graphene Source-Drain and Gate Electrodes
,Applied Physics Express,4:21603 2011
K. Suganuma, S. Watanabe, T. Gotou and K. Ueno

Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasisingle crystalline epitaxial growth of thin film phase pentacene
American Institute of Physics,APPLIED PHYSICS LETTERS,93(22):223303-1-223303-3 200812
Toshihiro Shimada;Manabu Ohtomo;Tadamasa Suzuki;Tetsuya Hasegawa;Keiji Ueno;Susumu Ikeda;Koichiro Saiki;Miho Sasaki;Katsuhiko Inaba
電子ジャーナル Web Of Science リポジトリ

Nanotransfer of the Polythiophene Molecular Alignment onto the Step-Bunched Vicinal Si(111) Substrate
,Langmuir,24(20):11605-11610 200810
Ryo Onoki;Genki Yoshikawa;Yuki Tsuruma;Susumu Ikeda;Koichiro Saiki;Keiji Ueno
電子ジャーナル Web Of Science

Molecular layer-by-layer growth of C-60 thin films by continuous-wave infrared laser deposition
The Japan Society of Applied Physics,APPLIED PHYSICS EXPRESS,１(1):015005-1-015005-3 200801
Seiichiro Yaginuma;Kenji Itaka;Masamitsu Haemori;Masao Katayama;Keiji Ueno;Tsuyoshi Ohnishi;Mikk Lippmaa;Yuji Matsumoto;Hideomi Koinuma
電子ジャーナル Web Of Science リポジトリ

Effect of organic buffer layer on performance of pentacene field-effect transistor fabricated on natural mica gate dielectric
応用物理学会,JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,46(36-40):L913-L916 200710
斉木幸一朗,上野啓司
リポジトリ

低次元構造半導体を用いた新奇薄膜電界効果トランジスタ形成に関する研究
,科学研究費補助金(基盤研究(C)) 研究成果報告書,平成17-18年度:1-45 200704
上野啓司,小野木亮,阿部重臣,松本晃,川端ちひろ,平岡和,保戸塚梢,白石淳子,高橋新,武林聡子,坪倉陽
リポジトリ

直鎖π共役電子系の電気伝導度測定に関する研究
埼玉大学総合研究機構,総合研究機構研究プロジェクト研究成果報告書,第5号(18年度):553-554 2007
上野啓司
Measurement of electric conductivity of the straight chain of conjugated π-electron systems
リポジトリ

In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates
Elsevier Science B.V.,,SURFACE SCIENCE,600(12):2518-2522 200601
G. Yoshikawa, T. Miyader, R. Onoki, K. Ueno, I. Nakai, S. Entani, S. Ikeda, D. Guo, M. Kiguchi, H. Kondoh,T. Ohta and K. Saiki
電子ジャーナル リポジトリ

層状化合物を用いた高移動度フレキシブル電界効果トランジスタの開発に関する研究
埼玉大学総合研究機構,総合研究機構研究プロジェクト研究成果報告書,第4号(17年度) 2006
上野啓司
Development of high-mobility flexible field effect transistors using layered structure compounds
リポジトリ

溶液系の有機デバイス作製技術検討
埼玉大学総合研究機構地域共同研究センター産学連携推進部門,埼玉大学地域共同研究センター紀要,7:49-52 2006
上野啓司,小野木亮,高橋新,森朋彦
A thin film of 2, 5, 11, 14-tetradodecylhexabenzocoronene (HBC4D) was fabricated by the horizontal lifting transfer of its Langmuir film onto a hydrophobic substrate surface, and characterized by UV-vis optical absorption spectroscopy, X-ray diffraction and atomic force microscopy. A field effect transistor (FET) of HBC4D was also fabricated by the wet process, and its performances were compared with HBC4D-FET fabricated by the vacuum deposition. Highly-ordered growth of the HBC4D thin film was achieved by the wet process, but its FET performances were worse than those of the vacuum-deposited FET.
benzocoronene, organic device, organic field effect transistor, wet process
リポジトリ

Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors
American Institute of Physics,JOURNAL OF APPLIED PHYSICS,98(11):114503-1-114503-5 200512
上野啓司,斉木幸一朗
電子ジャーナル Web Of Science リポジトリ

Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)
,APPLIED PHYSICS LETTERS,87(6):061917 2005
Shimada T, Nogawa H, Hasegawa T, Okada R, Ichikawa H, Ueno K, Saiki K
電子ジャーナル Web Of Science

高誘電率ゲート酸化膜を用いた電界効果トランジスタによる有機薄膜の物性変調
埼玉大学総合研究機構,総合研究機構研究プロジェクト研究成果報告書,16年度 2005
上野啓司
Modification of physical properties of an organic thin film using a field effect transistor fabricated on a high-k gate oxide film
リポジトリ

Morphological change of C-60 monolayer epitaxial films under photoexcitation
American Physical Society,PHYSICAL REVIEW B,70(15):155415-1-155415-6 200410
Y. Yamamoto, H. Ichikawa, K. Ueno, A. Koma, K. Saiki, T. Shimada
リポジトリ

Methyl-terminated Si(111) surface as the ultra thin protection layer to fabricate position-controlled alkyl SAMs by using atomic force microscope anodic oxidation
,Surface Science,552(1-3):46-52 2004
Okada R, Miyadera T, Shimada T, Koma A, Ueno K, Saiki K
電子ジャーナル Web Of Science

Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure
,JAPANESE JOURNAL OF APPLIED PHYSICS,43:L203-L205 2004

Accumulation and depletion layer thicknesses in organic field effect transistors
,JAPANESE JOURNAL OF APPLIED PHYSICS,42:L1408-L1410 2003
電子ジャーナル Web Of Science

Visible light photoemission and negative electron affinity of single-crystalline CsCl thin films
,Surface Science,544(2-3):220-226 2003
電子ジャーナル Web Of Science

表面不活性化シリコン基板上における異方的有機薄膜成長
,応用物理,28(3):46-55 2003

表面不活性化シリコン基板上における異方的有機薄膜成長
応用物理学会,応用物理,72(3):322-326 2003
上野啓司,斉木幸一朗小間篤
Anisotropic organic thin film growth on a Si substrate having a passivated surface.
リポジトリ

Nano-scale anodic oxidation on a Si(111) surface terminated by bilayer-GaSe
Elsevier Science B.V.,Surface Science Sp. Iss. SI,514(1-3):27-32 200208
上野啓司,斉木幸一朗,小間篤
電子ジャーナル リポジトリ

Highly stable passivation of a Si(111) surface using bilayer-GaSe
Elsevier Science B.V.,APPLIED SURFACE SCIENCE,190(1-4):485-490 200205
上野啓司,斉木幸一朗,小間篤
電子ジャーナル リポジトリ

Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate
Elsevier Science B.V.,JOURNAL OF CRYSTAL GROWTH,237(2):1610-1614 200204
上野啓司,斉木幸一朗,小間篤
電子ジャーナル リポジトリ

表面不活性基板を利用した有機・無機ナノ構造の形成(<小特集>ナノ結晶)
日本結晶成長学会,日本結晶成長学会誌,28(3):164-173 200110
上野啓司,小間篤
Fabrication of Organic and Inorganic Nanostructures by Using Inactive Substrate Surfaces(<Special Issue>Nanocrystals)
リポジトリ

Fabrication of GaAs quantum dots on a bilayer-GaSe terminated Si(111) substrate
応用物理学会,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,40(3B):1888-1891 200103
上野啓司,斉木幸一朗,小間篤
リポジトリ

Electron-energy-loss spectroscopy of KxC60 and K-halides: comparison in the K-3p excitation region
Elsevier Science B.V.,APPLIED SURFACE SCIENCE,169:184-187 200101
上野啓司,斉木幸一朗,小間篤
電子ジャーナル リポジトリ

Epitaxial growth and electronic structure of a C_<60> derivative prepared by using a solution spray technique
American Institute of Physics,JOURNAL OF APPLIED PHYSICS,90(1):209-212 200101
上野啓司,小間篤
リポジトリ

Investigation of the growth mechanism of an InSe epitaxial layer on a MoS_2 substrate
Elsevier Science B.V.,JOURNAL OF CRYSTAL GROWTH,219(1-2):115-122 200010
上野啓司,斉木幸一朗,小間篤
電子ジャーナル リポジトリ

Highly sensitive reflection high-energy electron diffraction measurement by use of micro-channel imaging plate
American Institute of Physics,REVIEW OF SCIENTIFIC INSTRUMENTS,71(9):3478-3479 200009
斉木幸一朗上野啓司,小間篤
リポジトリ

Investigation of epitaxial arrangement and electronic structure of a La@ C-82 film grown on an MoS_2 surface
American Physical Society,PHYSICAL REVIEW B,62(12):8281-8285 200009
上野啓司,小間篤,斉木幸一朗
リポジトリ

A novel method to fabricate a molecular quantum structure: Selective growth of C-60 on layered material heterostructures
応用物理学会,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW,38(1B):511-514 1999
上野啓司,斉木幸一朗,小間篤
リポジトリ

表面を選ぶサッカーボール
丸善,物理科学雑誌パリティ,13(11):47-50 199811
上野啓司
リポジトリ

Fabrication of C-60 nanostructures by selective growth on GaSe/MoS_2 and InSe/MoS_2 heterostructure substrates
Elsevier Science B.V.,APPLIED SURFACE SCIENCE,132:670-675 199801
上野啓司小間篤
電子ジャーナル リポジトリ

Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope
応用物理学会,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,36(6B):4061-4064 199706
上野啓司,小間篤
リポジトリ

Nanostructure fabrication by selective growth of molecular crystals on layered material substrates
American Institute of Physics,APPLIED PHYSICS LETTERS,70(9):1104-1106 199703
上野啓司,斉木幸一朗,小間篤
リポジトリ

Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials
American Institute of Physics,APPLIED PHYSICS LETTERS,58(5):472-474 199102
上野啓司,小間篤
リポジトリ

Van der Waals epitaxial growth and characterization of MoSe_2 thin films on SnS_2
American Institute of Physics,JOURNAL OF APPLIED PHYSICS,68(5):2168-2175 199009
上野啓司,小間篤
リポジトリ

Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica
American Institute of Physics,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,8(1):68-72 199001
上野啓司,斉木幸一朗小間篤
リポジトリ

Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs (111) surfaces
American Institute of Physics,APPLIED PHYSICS LETTERS,56(4):327-329 199001
上野啓司,斉木幸一朗,小間篤
リポジトリ

Presentation
カルコゲナイド系2次元層状物質薄膜の形成と素子応用
,第60回応用物理学会春季学術講演会 2013

Solution Processed Graphene Transparent Conductive Film
,2012 The Nineteenth International Workshop on Active-Matrix Flatpanel Displays and Devices　-TFT Technologies and FPD Materials- (AM-FPD'12) 201207
Keiji Ueno

グラフェンを電極としたn型FETの溶液塗布法による作製と評価
2012年春季　第59回応用物理学関係連合講演会,2012年春季　第59回応用物理学関係連合講演会　講演予稿集:15a-A3-44 201203
菅沼洸一，斉木幸一朗，後藤拓也，上野啓司

ゲート誘電体中への不純物添加によるペンタセンFET 動作特性制御
2012年春季　第59回応用物理学関係連合講演会,2012年春季　第59回応用物理学関係連合講演会　講演予稿集 :15p-GP11-12 201203
吉永裕亮，菅沼洸一，坂本　舞，斉木幸一朗，上野啓司

酸化グラフェンを正孔輸送層とする有機薄膜太陽電池素子のUV-O3処理による性能向上
2012年春季　第59回応用物理学関係連合講演会,2012年春季　第59回応用物理学関係連合講演会　講演予稿集:16p-GP9-10 201203
久保洋輔，石川　良，白井　肇，後藤拓也，上野啓司

酸化亜鉛ナノ粒子を電子輸送層とする逆型有機薄膜太陽電池
2012年春季　第59回応用物理学関係連合講演会,2012年春季　第59回応用物理学関係連合講演会　講演予稿集:16p-GP9-13 201203
石川　良，白井　肇，上野啓司

結晶Si/PEDOT:PSS:GOへテロ接合太陽電池Crystalline Si/PEDOT:PSS:GO composite heterojunction solar cells
2012年春季　第59回応用物理学関係連合講演会,2012年春季　第59回応用物理学関係連合講演会　講演予稿集:16p-F7-7 201203
劉　奇明，Zeguo Tang，豬野智久，上野啓司，白井　肇，後藤拓也

霧化製膜法による酸化グラフェン・PEDOT:PSS 製膜と太陽電池応用
2012年春季　第59回応用物理学関係連合講演会,2012年春季　第59回応用物理学関係連合講演会　講演予稿集 :16p-F7-8 201203
今村教嗣，日當大我，小野正浩，植原　晃，上野啓司，白井　肇

結晶Si/PEDOT:PSS:GOへテロ接合素子のキャリア輸送特性
2012年春季　第59回応用物理学関係連合講演会,2012年春季　第59回応用物理学関係連合講演会　講演予稿集 :17p-C2-3 201203
唐　澤国，Qiming Liu，小野正浩，猪野智久，石川　良，上野啓司，白井　肇

静電塗布(ESD)法によるP3HT薄膜成長の実時間計測と太陽電池応用
2012年春季　第59回応用物理学関係連合講演会,2012年春季　第59回応用物理学関係連合講演会　講演予稿集:17p-F10-13 201203
日當大我，猪野智久，小野正浩，福田武司，上野啓司，白井　肇

結晶Si/a-Si:H(Cl)/PEDOT:PSSへテロ接合太陽電池に関する研究
2012年春季　第59回応用物理学関係連合講演会,2012年春季　第59回応用物理学関係連合講演会　講演予稿集:18a-B10-4 201203
越野秀人，今井祐紀，小野正浩，猪野智久，上野啓司，白井　肇

層状カルコゲナイド系を中心とした原子膜のデバイス応用
,日本物理学会2012年秋季大会 2012
上野啓司

グラフェン塗布電極を用いた有機FETの作製と評価
電子情報通信学会　有機エレクトロニクス研究会（OME） 201112
菅沼洸一・斉木幸一朗・後藤拓也・上野啓司

グラフェン／MoS2等層状物質の薄膜塗布形成と素子応用
2011年度第2回ナノカーボン研究会 201112
上野啓司

グラフェン透明導電膜
高分子学会　ポリマーフロンティア21 201110
上野啓司

Application of Solution-processed Graphene Oxide and Reduced Graphene Oxide Thin Films to Organic Thin Film Photovoltaic Cells
International Conference on Materials for Advanced Technologies (ICMAT2011):E-PO3-7 201106
Keiji Ueno, Ryo Ishikawa, Yosuke Kubo, Hajime Shirai and Takuya Gotou

Fabrication of Polymer Solar Cells with Graphene-doped Active Layers
International Conference on Materials for Advanced Technologies (ICMAT2011) :E-PO3-10 201106
Ryo Ishikawa, Takuya Gotou, Hajime Shirai and Keiji Ueno

PVA ゲｰト誘電体中の Na 除去/再添加によるペンタセン FET の動作特性変調
2010年秋季 第71回応用物理学会学術講演会,2010年秋季 第71回応用物理学会学術講演会 講演予稿集:16a-H-8 201009
吉永裕亮,斉木幸一朗,上野啓司

トップコンタクト型グラフェン電極を有する塗布型有機FETの作製と評価
2010年秋季 第71回応用物理学会学術講演会,2010年秋季 第71回応用物理学会学術講演会 講演予稿集:16a-H-1 201009
菅沼洸一,斉木幸一朗,後藤拓也,上野啓司

全塗布形成トップゲｰト構造グラフェン電極有機電界効果トランジスタの作製
2010年秋季 第71回応用物理学会学術講演会,2010年秋季 第71回応用物理学会学術講演会 講演予稿集:16a-H-2 201009
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酸化グラフェンを正孔輸送層とする塗布型有機薄膜太陽電池の作製
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酸化グラフェンを正孔輸送層に用いたCuPc/C60太陽電池
2010年秋季 第71回応用物理学会学術講演会,2010年秋季 第71回応用物理学会学術講演会 講演予稿集:14p-R-4 201009
林 達也,猪野智久,村松義之,久保洋輔,石川 良,後藤拓也,上野啓司,白井 肇

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2010年秋季 第71回応用物理学会学術講演会,2010年秋季 第71回応用物理学会学術講演会 講演予稿集:14p-R-5 201009
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Transparent Organic Field-effect Transistors with Solution-processed Graphene Electrodes
International Conference on Science and Technology of Synthetic Metals 2010 (ICSM 2010),International Conference on Science and Technology of Synthetic Metals 2010 (ICSM 2010) 講演予稿集 201007
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2010年春季 第57回応用物理学関係連合講演会,2010年春季 第57回応用物理学関係連合講演会 講演予稿集:20p-TD-7 201006
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2010年春季 第57回応用物理学関係連合講演会,2010年春季 第57回応用物理学関係連合講演会 講演予稿集:20p-TD-8 201003
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プラズマ処理 PEDOT:PSS 基板上CuPc/C60太陽電池
2010年春季 第57回応用物理学関係連合講演会,2010年春季 第57回応用物理学関係連合講演会 講演予稿集:19p-ZL-9 201003
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グラフェン薄膜をソース/ドレイン電極とするn型有機薄膜電界効果トランジスタの塗布形成
2010年春季 第57回応用物理学関係連合講演会,2010年春季 第57回応用物理学関係連合講演会 講演予稿集:17a-ZK-9 201003
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2010年春季 第57回応用物理学関係連合講演会,2010年春季 第57回応用物理学関係連合講演会 講演予稿集:17a-ZK-8 201003
菅沼洸一、吉田雅史、斉木幸一朗、後藤拓也、上野啓司

DMSOドｰプPEDOT:PSSをTCOに用いたCuPc/C60へテロ接合型太陽電池
2011年春季 第58回応用物理学関係連合講演会,2011年春季 第58回応用物理学関係連合講演会 講演予稿集:25p-BD-12 2010
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Shogo Kato, Ryo Ishikawa, Hajime Shirai, Keiji Ueno

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Graphene transparent electrodes for organic polymer solar cells
Graphene Tokyo 2009 200907
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Graphene Tokyo 2009 200907
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