キーワード検索
プロフィール
清水 麻希
シミズ マキ
|
■所属部署名 |
理工学研究科 数理電子情報部門 |
■電話番号 |
|
|
|
■職名 |
助教 |
■FAX番号 |
|
|
■住所 |
さいたま市桜区下大久保 |
■メールアドレス |
|
|
■ホームページURL |
|
プロフィール
研究活動業績
研究業績(著書・発表論文等)
- 著書
-
Diamond for Quantum Applications Part 1 Chapter 5 “Charge state control by band engineering
Semiconductors and Semimetals,:137-159 202006
ISBN:780128202418
T. Makino, H. Kato, M. Shimizu, Mutsuko Hatano, Norikazu Mizuochi
- 論文
-
The influence of oxygen related defects on the formation of In2O3-based low fluorescence transparent conducting film
pss(a) 2023
Maki Shimizu, Masataka Shugo, Shun Mori, Yasuto Hijikata, Shinya Aikawa
-
Charge states of nitrogen-vacancy centers in Fermi level controlled diamond n-i-n junctions
Journal of Applied Physics,133:214401 2023
M. Shimizu, T. Makino, H. Kato, M. Fujiwara, M. Ogura,N. Mizuochi,M. Hatano,
-
垂直配向カーボンナノチューブを用いた最大静止摩擦力の測定
表面と真空, 62:39 2019
福田美実, 井上枝実, 四本松康太, 清水麻希, 本間芳和.
-
Engineering of Fermi level by nin diamond junction for control of charge states of NV centers
Appl. Phys. Lett.,112:111903 2018
T. Murai, T. Makino, H. Kato, M. Shimizu, T. Murooka, E. D. Herbschleb, Y. Doi H. Morishita, M.Fujiwara, M.Hatano, S.Yamasaki, N.mizuochi
-
カーボンナノチューブのオゾンによる損傷の評価
表面と真空,61:797 2018
石川諒， 中野尭雄， 島龍之介， 清水麻希， 本間芳和
-
Terahertz Spectroscopy of Individual Carbon Nanotube Quantum Dots.
Nano letters,19(1):242 2018
T. Tsurugaya, K. Yoshida, F. Yajima, M. Shimizu, Y. Homma, and K. Hirakawa,
-
Charge-state control of ensemble of nitrogen vacancy centers by n–i–n diamond junctions,
Appl. Phys. Express,11:033004 2018
M. Shimizu, T. Makino, T. Iwasaki, K. Tahara, H. Kato, N. Mizuochi, S. Yamasaki and M. Hatano
-
Effect of interfacial water formed between graphene and SiO2/Si substrate
Appl. Phys. Express,10:075012 2017
T. Koyama, T. Inaba, K. Komatsu, S. Moriyama, M. Shimizu, and Y. Homma
-
Raman imaging of millimeter-long carbon nanotubes grown by a gas flow method
Appl. Phys. Express, ,10:025103 2017
K. Kihara, A. Ishitani, T. Koyama, M. Fukasawa, T. Inaba, M. Shimizu, and Y. Homma
-
Correlation between active layer thickness and ambient gas stability in IGZO thin-film transis-tors
Journal of Physics D: Applied Physics,50:025012 2016
X. Gao, M-F Lin, B-H Mao, M. Shimizu, N. Mitoma, T. Kizu, W. Ou-Yang, T Nabatame, Z. Liu, Kazuhito Tsukagoshi
-
Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p–i–n junction
Diamond and Related Materials,63:192 2016
M. Shimizu, T. Makino, T. Iwasaki, J. Hasegawa, K. Tahara, W. Naruki, H. Kato, S. Yamasaki, M. Hatano
-
Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film tran-sistors.
J. Vac. Sci. Technol., A,33:061506 2015
K. Kurishima, T. Nabatame, M. Shimizu, N. Mitoma, T. Kizu, S. Aikawa, K. Tsukagoshi, A. Ohi,T. Chikyow, A. Ogura
-
Fabrication of diamond lateral p–n junction diodes on (111) substrates
Physica Status Solidi A,,212:2548 2015
K. Sato, T. Iwasaki, M. Shimizu, H. Kato, T. Makino, M. Ogura, D. Takeuchi S. Yamasaki and M. Hatano
-
Improvement of fluorescence intensity of nitrogen vacancy centers in self-formed diamond mi-crostructures
Appl. Phys. Lett.,107:163102 2015
S. Furuyama, K. Tahara, T. Iwasaki, M. Shimizu, J. Yaita, M. Kondo, T. Kodera, and M. Hatano
-
Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor
ECS Trans.,61:345 2014
K. Kurishima, T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyo, A. Ogura
