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藤川 紗千恵 フジカワ サチエ

所属部署名 理工学研究科数理電子情報部門 電話番号 048-767-6703
職名 助教 ■FAX番号
住所 埼玉県さいたま市桜区下大久保255 ■メールアドレス fujikawa@mail.saitama-u.ac.jp
■ホームページURL

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兼担研究科・学部

工学部電気電子物理工学科

所属学会

所属学会
応用物理学会結晶工学分科会
応用物理学会

学歴

取得学位
博士(工学) , 埼玉大学

受賞学術賞

2013 , 第三回先端フォトニクスシンポジウム 人気ポスター賞
2012 , CREST「新機能創成に向けた光・光量子科学技術」研究領域第5回公開シンポジウム ポスター賞
2012 , 平成23年度基礎科学・国際特別研究員研究成果発表会 ポスター賞
2010 , 日本結晶成長学会 ナノ構造・エピタキシャル成長分科会 研究奨励賞

研究職歴等

研究職歴
2019 , 埼玉大学大学院 理工学研究科 助教
2017 - 2019 , 東京電機大学 工学部電気電子工学科 助教
2013 - 2017 , 東京理科大学 基礎工学部電子応用工学科 嘱託助教
2013 - 2017 , 情報通信研究機構 協力研究員(兼任)
2013 , 理化学研究所 客員研究員(兼任)
2012 - 2013 , 理化学研究所 特別研究員
2009 - 2012 , 理化学研究所 基礎科学特別研究員
2005 - 2009 , 理化学研究所

研究活動業績

研究業績(著書・発表論文等)

論文
Advantage of Heteroepitaxial GaSb Thin-film Buffer and GaSb Dot Nucleation Layer for GaSb/AlGaSb Multiple Quantum Well Structure Grown on Si(100) Substrate by Molecular Beam Epitaxy
,Journal of Crystal Growth,507(1):357-361 2019
Ryuto Machida, Kouichi Akahane, Issei Watanabe, Shinsuke Hara, Sachie Fujikawa, Akifumi Kasamatsu, Hiroki I.Fujishiro

Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates
,J. Phys. D: Appl. Phys.,52(115102):1-10 2019
Takuma Matsumoto, M Ajmal Khan, Noritoshi Maeda, Sachie Fujikawa, Norihiko Kamata and Hideki Hirayama

Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD
,Journal of crystal growth,510:47-49 2019
Sachie Fujikawa, Toshiya Ishiguro, Ke Wang, Wataru Terashima, Hiroki Fujishiro, Hideki Hirayama

アンチモン系トランジスタの開発
,信学技報,117(364):33-36 201712
藤代博記、磯野恭佑、原田義彬、岡直希、竹内淳、藤川紗千恵、町田龍人、渡邊一世、山下良美、遠藤聡、原紳介、笠松章史

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing
,AIP Advances,7:105117 201710
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Wen Hsin Chang, Tetsuji Yasuda, and Tatsuro Maeda

Comparative Study on Noise Characteristics of As and Sb-based High Electron Mobility Transistors
,physica tatus solis (a),214(3):1600599 201703
Takuto Takahashi, Shota Hatsushiba, Sachie Fujikawa, and Hiroki I. Fujishiro,

Effect of low-temperature-grown GaSb layer on formation of high-density and small GaSb islands on Si(100) substrate
,PHYSICA STATUS SOLIDI B,253(4):648-653 201604
Ryuto Machida, Ryusuke Toda, Sachie Fujikawa, Shinsuke Hara, Issei Watanabe, Hiroki I. Fujishiro

Effects of Ga-induced Reconstructed Surfaces and Atomic Steps on the Morphology of GaSb Islands on Si (100)
,APPLIED SURFACE SCIENCE,351:686-692 201510
Ryuto Machida, Ryusuke Toda, Sachie Fujikawa, Shinsuke Hara, Issei Watanabe, Hiroki I. Fujishiro

AlInSbステップバッファ層を用いたInSb量子井戸歪緩和構造の電子輸送特性
,信学技報,115(156):45-49 201507
竹鶴達哉,藤川紗千恵,原田義彬,鈴木浩基,磯野恭佑,加藤三四郎,辻 大介,藤代博記

Recent Progress in AlGaN‐Based Deep‐UV LEDs
,Electronics and Communications in Japan,98(5):1-8 201504
HIDEKI HIRAYAMA, SACHIE FUJIKAWA, and NORIHIKO KAMATA

Improved electron transport properties of InSb quantum well structure using stepped buffer layer for strain reduction
,JOURNAL OF CRYSTAL GROWTH,425:64-69 201502
S. Fujikawa, T. Taketsuru, D. Tsuji, T. Maeda, H.I. Fujishiro

Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal–oxide–semiconductor structures
,JAPANESE JOURNAL OF APPLIED PHYSICS,54(021201):021201-1-021201-5 201501
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Tetsuji Yasuda, and Tatsuro Maeda

窒化物LED高効率化のためのナノインプリントとドライエッチングによる微細加工制御技術
,信学技報,114(338):27-32 201411
鹿嶋行雄,松浦恵里子,嶋谷 聡,小久保光典,田代貴晴,大川貴史,上村隆一郎,長田大和,藤川紗千恵,平山秀樹

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
,Jpn. J.Appl. Phys.,53(100209):100209-1-100209-10 201409
H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata

III-V DG MOSFETにおける遅延時間の発生メカニズムの解析
, 信学技報,114(168):25-28 201408
矢島悠貴,大濱諒子,藤川紗千恵,藤代博記

貫通転位がInSb HEMTのデバイス特性に与える影響の解析
,信学技報,114(168):13-18 201408
初芝正太,長井彰平,藤川紗千恵,原紳介,遠藤聡,渡邊一世,笠松章史,藤代博記

Comparative Study on Nano-Scale III-V Double-Gate MOSFETs with Various Channel Materials
,Physica Status Solidi C,10(11):1413-1416 201312
Akio Nishida, Kei Hasegawa, Ryoko Ohama, Sachie Fujikawa, Shinsuke Hara, and Hiroki I. Fujishiro

Recent Progress in AlGaN-Based Deep-UV LEDs
,Translated from Denki Gakkai Ronbunshi,133-C(8):1443-1448 201308
HIDEKI HIRAYAMA, SACHIE FUJIKAWA, and NORIHIKO KAMATA

真空アニール法がAl2O3/GaSb MOS界面に与える影響
,信学技報,113(176):37-42 201308
後藤 高寛, 藤川紗千恵, 藤代 博記, 小倉 睦郞, 安田哲二, 前田 辰郎

Ga/Si(111)表面再構成構造を用いたSi(111)基板上GaSbナノ構造の形成
,信学技報,113(176):43-48 201308
町田 龍人, 戸田 隆介, 吉木 圭祐, 藤川 紗千恵, 原 紳介, 色川 勝己, 三木 裕文, 河津 璋, 藤代 博記

AlGaN深紫外LEDの高効率化への取り組み
,信学技報,112(329):87-92 201211
富田優志,藤川紗千恵,水澤克哉,豊田史朗,鎌田憲彦,平山秀樹

Characteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate
,Phys. Status Solidi C,9(3-4):810-813 201201
N. Maeda, H. Hirayama and S. Fujikawa

High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates
,physica status solidi (c),9(3-4):790-793 201201
S. Fujikawa, H. Hirayama and N. Maeda

m軸およびa軸オフ角 C面サファイア基板上のAlN結晶成長の特徴と高出力AlGaN深紫外LEDの作製
,信学技報,111(292):107-112 201111
前田 哲利,藤川 紗千恵,平山 秀樹

284-300nm Quaternary InAlGaN based Deep Ultraviolet Light-Emitting Diodes on Si (111) Substrates
,Applied Physics Express,4:061002 201105
S. Fujikawa, H. Hirayama

Milliwatt power 270nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates
,Physica Status Solidi C,6(S2):S474-S477 200903
H. Hirayama, J Norimatsu, N. Noguchi, S. Fujikawa, T. Takano, K. Tsubaki, N Kamata

Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs
,Physica Status Solidi C,6(S2):S356-S359 200903
H. Hirayama, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata

222-282nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
,Physica Status Solidi A,206(6):1176-1182 200903
H Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata

222-282nm AlGaN and InAlGaN based deep-UV-LEDs fabricated on high-quality AlN template
,SPIE,7216:721621-1-721621-16 200902
Hirayama, N. Noguchi, S. Fujikawa, J. Norimatsu and N. Kamata, T. Takano and K. Tsubaki

Realization of 270 nm band AlGaN based UV-LED on large area AlN template with high crystalline quality
,Physica Status Solidi C,6(S2):S462-S465 200902
T. Takano, S. Fujikawa, K. Tsubaki, H. Hirayama

Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers
,Phys. Status Solidi C,6(S2):S784-S787 200901
S. Fujikawa, H. Hirayama, T. Takano and K. Tsubaki

280nm帯InAlGaN高出力紫外LED
,電子情報通信学会技術研究報告,108(323):83-88 200811
平山秀樹、藤川紗千恵、高野隆好、椿健治

ELO-AlNテンプレート上に作製した270nm帯AlGaN紫外LED
,電子情報通信学会技術研究報告,107(253):29-34 200811
乗松潤、平山秀樹、野口憲路、藤川紗千恵、高野隆好、椿 健治、鎌田憲彦

340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers
,Phys. Status Solidi C,5(6):2280-2282 200804
S. Fujikawa, T. Takano, Y. Kondo, H. Hirayama

Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow
,Phys. Status Solidi C,5(6):2260-2262 200804
S. Fujikawa, T. Takano, Y. Kondo, H. Hirayama

Realization of 340-nm-Band High-Output-Power (>7mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN
,Jpn.J.Appl. Phys.,47(4):2941-2944 200804
S. Fujikawa, T. Takano, Y. Kondo, H. Hirayama

Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by anti-surfactant method
,phys. stat. sol. (c),5(6):2312-2315 200804
H. Hirayama, S. Fujikawa

Realization of 340nm-band high-power UV-LED using p-type InAlGaN
,Journal of Light & Visual Environment, Special Issue,32(2):83-87 200803
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

Remarkable improvement in output power for an InAlGaN based ultraviolet LED by improving the crystalline quality of AlN/AlGaN templates
,phys. status sol. (c),5(6):2102-2104 200803
T. Takano, S. Fujikawa, Y. Kondo, H. Hirayama

p-InAlGaNと高品質AlNを用いた340nm帯高出力LED
,電子情報通信学会技術研究報告,107(253):29-34 200710
藤川紗千恵、高野隆好、近藤行廣、平山秀樹

330nm帯紫外発光InAlGaN量子井戸からの高い内部量子効率の観測
,電子情報通信学会技術研究報告,105(326):66-72 200510
平山秀樹、高野隆好、大橋智昭、藤川紗千恵、鎌田憲彦、近藤行廣

学会発表
電子ブロック層の最適化による250nm AlGaN UVC-LEDの出力改善
第80回応用物理学会秋季学術講演会,20a-E302-3 201909
中村 励志、藤川 紗千恵、前田 哲利、遠藤 聡、藤代 博記、平山 秀樹

微傾斜サファイア基板上AlNの選択横方向成長
第80回応用物理学会秋季学術講演会,20p-E310-4 201909
斉藤 貴大、中村 亮太、藤川 紗千恵、金 輝俊、前田 哲利、岡田 成仁、平山 秀樹、只友 一行

Epitaxial Lateral Overgrowth of AlN with Partially Non-dislocation-region on Vicinal AlN template
13th International Conference on Nitride Semiconductors (ICNS-13) 201907
F. Kim, T. Saito, S. Fujikawa, N. Maeda, N. Okada, H. Hirayama and K. Tadatomo

Realization of High Light O utput Power in AlGaN-Based UVB LED at 310±2nm Emission Using Highly Relaxed (50%) n-AlGaN Electron Injection Layer
3th International Conference on Nitride Semiconductors (ICNS-13) 201907
M.A. Khan, N.Maeda, S.Fujikawa, Masafumi Jo, Yoichi Yamada and Hideki Hirayama

GaN系QCL実現に向けたSi基板上GaN/AlGaN超格子構造の作製
第6回RAPシンポジウム 201811
藤川 紗千恵、石黒 稔也、王 科、藤代 博記、平山 秀樹

Development of 240 nm-band high output power AlGaN UVC LED
,International workshop on Nitride Semiconductors(IWN2018),OD15-2 201811
Toshiya Ishiguro, Reiji Nakamura, Sachie Fujikawa, Noritoshi Maeda, Ryuto Machida, Hiroki Fujishiro, and Hideki Hirayama

240nm帯AlGaN UVC-LEDの⾼出⼒化の検討
第79回応用物理学会秋季学術講演会,21a-146-8 201809
⽯⿊ 稔也, 中村 励志, 藤川 紗千恵, 前⽥ 哲利, 町⽥ ⿓⼈, 藤代 博記

AlNの選択横⽅向成⻑におけるストライプ⽅位依存性
第79回応用物理学会秋季学術講演会,19p-146-13 201809
⾦ 輝俊, ⻫藤 貴⼤, 藤川 紗千恵, 前⽥ 哲利, 岡⽥ 成仁, 平⼭ 秀樹, 只友一行

Evaluation of GaN-based THz-QCL structure on Si substrate grown by MOCVD
,19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX),P4823 201806
Sachie Fujikawa, Toshiya Ishiguro, Ke Wang, Wataru Terashima, Hiroki Fujishiro, Hideki Hirayama

アンチモン系トランジスタの開発
電子デバイス研究会 201712
藤代博記、磯野恭佑、原田義彬、岡直希、竹内淳、藤川紗千恵、町田龍人、渡邊一世、山下良美、遠藤聡、原紳介、笠松章史

Si基板上へのGaN系THz-QCL構造のMOCVD成長と評価
第78回応用物理学会秋季学術講演会,8p-A301-8 201709
石黒 稔也、藤川 紗千恵、王 科、前田 哲利、町田 龍人、藤代 博記、平山 秀樹

GaSb薄膜 /ドット核形成層を用いたSi(100)基板上のGaSb/AlGaSb MQW構造の作製
第78回応用物理学会秋季学術講演会,6p-PA7-8 201709
町田 龍人、赤羽 浩一、渡邊 一世、原 紳介、藤川 紗千恵、笠松 章史、藤代 博記

GaAs(100)基板上ヘテロエピタキシャルGaSb薄膜成長の界面制御
第78回応用物理学会秋季学術講演会,6p-PA7-9 201709
伊藤 峰水, 鈴木 浩基, 渡邊 優介, 藤川 紗千恵, 町田 龍人, 藤代 博記

Monte Carlo Study on Electron Transport Properties of GaxIn1-xSb HEMT Structures Considering Roughness Scattering
,Compound Semiconductor Week 2017 (CSW 2017) 201705
Yui Fujisawa, Takuto Takahashi, Shougo Kawamura, Sachie Fujikawa and Hiroki Fujishiro

Fabrication of GaSb/AlGaSb Multi Quantum Wells Structure Grown on Si(100) Substrate Using Heteroepitaxial GaSb Thin-film and Dots Nucleation Layers
,IPRM 2017 on Indium Phosphide and Related Materials 201705
R. Machida, K. Akahane, I. Watanabe, S. Hara, S. Fujikawa, A. Kasamatsu, and H.I. Fujishiro

Electron Transport Properties of InSb/Ga0.35In0.65Sb Composite Channel Structure
,Compound Semiconductor Week 2017 (CSW 2017), ISCS 2017 The 44th Symposium on Compound Semiconductor,P2.53 201705
S. Fujikawa, T. Iwaki, Y. Harada, J.Takeuchi, Y.Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, and A. Kasamatsu, H.I. Fujishiro

Research and development of InP, GaN and InSb-based HEMTs and MMICs for terahertz-wave wireless communications
,2016 IEEE Compound Semiconductor IC Symposium 201610
I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, I. Hosako,H. Hamada, T. Kosugi, M. Yaita, A. E. Moutaouakil, H. Matsuzaki, O. Kagami,T. Takahashi, Y. Kawano, Y. Nakasha, N. Hara,D. Tsuji, K. Isono, S. Fujikawa, and H. I. Fujishiro

InSb-based HEMTwith Over 300 GHz-fT using Al0.25In0.75Sb/Al0.15In0.85Sb stepped buffer layer for strain reduction
,19th International Conference on Molecular Beam Epitaxy (MBE2016) 201609
S. Fujikawa, K. Isono, Y. Harada, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro

Electron Transport Properties of InSb/GaInSb Composite Channel
,19th International Conference on Molecular Beam Epitaxy (MBE2016) 201609
S. Fujikawa, J. Takeuchi, Y. Harada, and H. I. Fujishiro

Poly-InSb nMOSFETs for monolithic 3DIC
,Solid State Devices and Materials (SSDM2016) 201609
Masahiro Takahashi, Toshifumi Irisawa, Wen-Hsin Chang, Junji Tominaga, Sachie Fujikawa, Hiroki I. Fujishiro, and Tatsuro Maeda

Growth of GaSb Dots Nucleation Layer and Thin -Film GaSb on Si(100) Substrate by Molecular Beam Epitaxy
,The 43rd International Symposium on Compound Semiconductors (ISCS) 2016 201606
Ryuto Machida, Ryusuke Toda, SachieFujikawa, Shinsuke Hara, Issei Watanabe, Kouichi Akahane, Akifumi Kasamatsu, Hiroki I. Fujishiro

Comparative Study on Noise Characteristics of As and Sb-based HEMTs
,The International Conference on Indium Phosphide and Related Materials (IPRM) 2016 201606
Takuto Takahashi, Shota Hatsushiba, Sachie Fujikawa, Hiroki I. Fujishiro

InSb-based HEMT with Over 300 GHz-fT using Evaporated SiOx Film
,The International Conference on Indium Phosphide and Related Materials (IPRM) 2016 201606
K. Isono, D. Tsuji, T. Taketsuru, S. Fujikawa, I. Watanabe Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro

DEPENDENCE OF InSb/GaSb FILMS GROWN ON FLAT AND VICINAL GaAs (100) SUBSTRATES
,31st NORTH AMERICAN MOLECULAR BEAM EPITAXY CONFRENCE (31th NAMBE) 201510
S. Fujikawa, H. Suzuki, H. I. Fujishiro

Study on Impacts of Dislocation and Roughness Scatterings on Electron Transport in InSb QW Comparing Monte Carlo Simulation and Measurements
,Compound Semiconductor Week 2015 201507
Shota Hatsushiba, Sachie Fujikawa and Hiroki Fujishiro

Growth of GaSb Islands on Si(100) with Low-temperature Grown GaSb Layer
,Compound Semiconductor Week 2015 (CSW 2015) 201507
Ryuto Machida, Ryusuke Toda, Sachie Fujikawa, Shinsuke Hara, Hiroki Fujishiro

Improved Electron Transport Properties of InSb-QW Structure Using Stepped Buffer Layer for Strain Reduction
,18th International Conference on Molecular Beam Epitaxy(MBE2014),P48 201409
S. Fujikawa, D. Tsuji, T. Taketsuru, T. Maeda and H. I. Fujishiro

Characterization of InSb-QW structures with Al0.25In0.75Sb / Al0.15In0.85Sb buffer layer for strain reduction
,8th Workshop on Compound Semiconductor Devices and Integrated Circuits (38th WOCSDICE),We-D1-2 201406
S. Fujikawa, Y. Takagi, T. Maeda, T. Taketsuru, D. Tsuji and H. I. Fujishiro

Analysis of Delay Times in III-V MOSFETs with Various Channel Materials
,The 41st International Symposium on Compound Semiconductor (ISCS 2014) 201405
Ryoko Ohama, Yuki Yajima, Akio Nishida, Sachie Fujikawa and Hiroki I. Fujishiro

Demonstration of Ni-GaSb metal S/D GaSb pMOSFETs with vacuum annealing on GaAs substrates
,44th IEEE Semiconductor Interface Specialists Conference(SISC) 201312
T. Gotow, S. Fujikawa, Hiroki I. Fujishiro, M. Ogura ,T. Yasuda, T. Maeda

Growth Morphology of GaSb Islands on Ga-Induced Si(100)-2×2 Reconstructed Surface
,12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures in conjunction with 21st International Colloquium on Scanning Probe Microscopy(ACSIN-12&ICSPM21) 201311
Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa, Shinsuke Hara, Akira Kawazu, Hiroki I.Fujishiro

Frequency Limits of Nanoscale HEMTs with Various Channel Materials
,10th Topical Workshop on Heterostructure Microelectronics (THWM 2013) 201309
S. Nagai, Y. Nagai, S. Fujikawa, H. I. Fujishiro, S. Hara, A. Endoh, I. Watanabe and A. Kasamatsu

AlGaN-based Deep-UV LEDs Fabricated on Connected-Pillar AlN Buffer
,The 10th Conference on Lasers and Electro-Optics Pacific Rim, and The 18th Opto Electronics and Communications Conference/Photonics in Switching 2013 (CLEO-PR & OECC/PS 2013) 201306
H. Hirayama, Y. Tomita, S. Toyoda, S. Fujikawa and N. Kamata

Recent progress of AlGaN based deep-UV LEDs
,E-MRS(European Materials Research Society) 2013 Spring Meeting 201305
S. Fujikawa, N. Kamata and H. Hirayama

Realization of High-Efficiency Deep-UV LEDs using transparent p-AlGaN Contact Layer
,Compound Semiconductor Week(CSW 2013),IPRM 2013(The 25th International Conference on Indium Phosphide and Related Materials) 201305
Noritoshi Maeda, Sachie Fujikawa and Hideki Hirayama

Improvement of light extraction efficiency of AlGaN deep-UV LED using 2-dimensional photonic crystal (2D-PhC)
,International Workshop on Nitride Semiconductors 2012 (IWN2012) 201210
S.Fujikawa, H. Hirayama, Y. Kashima, H. Nishihara, T. Tashiro, T. Ohkawa, S. W. Youn and H. Takagi

Improvement of light extraction efficiency of AlGaN deep-UV LED using 2-dimensional photonic crystal (2D-PhC)
,4th International Symposium on Growth of III-Nitrides (ISGN-4) 201207
S.Fujikawa, H. Hirayama, Y. Kashima, H. Nishihara, T. Tashiro, T. Ohkawa, S. W. Youn and H. Takagi

High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates
,9th International Conference on Nitride Semiconductors (ICNS-9) 201107
S. Fujikawa, H. Hirayama, N. Maeda

High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates
,5th Asia-Pacific Workshop on Widegap Semiconductors(APWS-2011) 201105
S. Fujikawa, H. Hirayama and N. Maeda

Realization of InAlGaN-based deep UV LEDs on Si (111) substrates
,International Workshop on Nitride semiconductors (IWN2010) 201009
S. Fujikawa, H. Hirayama

First Achievement of Deep-UV LED on Si substrate
,2010 IEEE International Semiconductor Laser Conference 201009
S. Fujikawa, H. Hirayama

Marked Increase of Injection Efficiency in AlGaN Deep-UV LEDs using MQB
,9th International Conference on Nitride Semiconductors (ICNS-9) 201009
H. Hirayama, Y. Tsukada, M. Akiba, Y. Tomita, S.Fujikawa, N. Maeda, N. Kamata

Growth of AlN with Low Threading Dislocation Density on Sapphire Fabricated by controlling AlN Nuclei using 2inch x 3 MOCVD System
,8th International Coference on Nitride Semiconductors (ICNS-8) 200910
T. Takano, H. Hirayama, S. Fujikawa, K. Tsubaki

280nm-band InAlGaN deep-UV LED on Silicon (111) substrate
,Third International Symposium on Growth of Ⅲ-Nitrides(ISGN-3) 200910
S. Fujikawa, H. Hirayama

Achievement of High-quality Quaternary InAlGaN Quantum Wells for Deep-UV LEDs by using Quite Low Growth Rate Epitaxy
,8th International Conference on Nitride Semiconductors (ICNS-8) 200910
S. Fujikawa, H. Hirayama, T. Takano, K. Tsubaki

222-282nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template
,SPIE Photonics West 2009 200901
H. Hirayama, N. Noguchi, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata

Realization of 270 nm Band AlGaN Based UV-LED on Large Area AlN Template with High Crystalline Quality
,International Workshop on Nitride Semiconductors 2008 (IWN2008),Tu2b-P13 200810
T. Takano, S. Fujikawa, K. Tsubaki, and H. Hirayama

Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template
, International Workshop on Nitride Semiconductors 2008 (IWN2008),We2b-B5 200810
J. Norimatsu, H. Hirayama, N. Noguchi, S. Fujikawa, T. Takano, K. Tsubaki, and N. Kamata

Fabrication of low threading dislocation density ELO-AlN template for the application to deep-UV LED
,International Workshop on Nitride Semiconductors 2008 (IWN2008),We1-B2 200810

Extremely high efficiency 280 nm-band emission from quaternary InAlGaN QWs realized by controlling Si-doped layers
,International Workshop on Nitride Semiconductors 2008 (IWN2008),Th5-F6 200810
S. Fujikawa, H. Hirayama, T. Takano, and K. Tsubaki,

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
,International Workshop on Nitride Semiconductors 2008 (IWN2008),We2b-B1 200810
H. Hirayama, S. Fujikawa, N. Noguchi, T. Yatabe, T. Takano, K. Tsubaki, and N. Kamata

Extremely high efficiency PL emission from 280 nm-band InAlGaN QWs realized by Si-doped layer control
,Second International Symposium on Growth of III-Nitrides (ISGN-2),Mo-54 200807
S. Fujikawa, H. Hirayama, T. Takano and K. Tsubaki

280 nm-Band Quaternary InAlGaN Quantum Well Deep-UV LEDs with p-InAlGaN Layers
,International Symposium on Semiconductor Light Emitting Devices 2008 (ISSLED2008),K4 200805
S. Fujikawa, H. Hirayama, T. Takano and K. Tsubaki

Realization of 340nm-band high-power UV-LED using p-type InAlGaN
,First International Conference on White LEDs and Solid State Lighting (White LEDs-07),We-P28 200711
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

340nm-band High-power (>7 mW) InAlGaN Quantum Well UV-LED Using p-type InAlGaN Layers
,The 34th International Symposium on Compound Semiconductors (ISCS2007),ThC P33 200710
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

Realization of 340nmband high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN
,2007 International Conference on Solid State Devices and Materials (SSDM2007),E-8-5 200709
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

Remarkable Improvement of Output Power for InAlGaN Based Ultraviolet LED by Improving the Crystal Quality of AlN/AlGaN Templates
,7th Int'l Conference of Nitride Semiconductors (ICNS-7),ThP82 2007
T. Takano, S. Fujikawa, Y. Kondo and, H. Hirayama

Quaternary InAlGaN Quantum-Dot UV-LED Emitting at 335nm Fabricated by Anti-Surfactant Method
,7th Int'l Conference of Nitride Semiconductors (ICNS-7),ThP24 2007
H. Hirayama and S. Fujikawa

340nm-Band High-Power (>7mW) InAlGaN Quantum Well UV-LED Using p-Type InAlGaN Layers
,7th Int'l Conference of Nitride Semiconductors (ICNS-7),J2 2007
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

Realization of 340nm-Band High-Power InAlGaN-Based UV-LEDs by the Suppression of Electron Overflow
,7th Int'l Conference of Nitride Semiconductors (ICNS-7),ThP81 2007
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

Remarkable Increase of UV Emission Efficiency of InAlGaN Quantum Well by using High-quality AlN/AlGaN Buffers
,13th International Conference on Metal Organic Vapor Phase Epitaxy IC-MOVPE-XIII),Tu-P.30 2006
T. Takano, H. Hirayama, S. Fujikawa and Y. Kondo

Remarkable Improvement of Output Power for InAlGaN Based UV-LED by Ni/Au Electrode
,International Workshop on Nitride Semiconductors 2006 (IWN2006),TuP2-38 2006
T. Takano, H. Hirayama, S. Fujikawa and Y. Kondo

その他
光・電子デバイスの研究に携わって
映像情報メディア学会,映像情報メディア学会誌,68(12):922-923 201412
藤川紗千恵

AlGaN系深紫外LEDの進展と今後の展望
,InterLab特集「注目の技術とその傾向」,112:10-16 2014
平山秀樹、前田哲利、藤川紗千恵、豊田史郎、金澤裕也、鎌田憲彦、椿健治、阪井淳、高野隆好、美濃卓哉、野口憲路

素子透明化によるAlGaN深紫外LEDの光取出し効率の高効率化
,OPTRONICS,33(386):58-66 2014
平山秀樹、前田哲利、藤川紗千恵、豊田史朗、鎌田憲彦

AlGaN系深紫外LEDの進展と今後の展望
電気学会,電気学会論文誌C(電子・情報・システム部門誌),133(8):1443-1448 201304
平山秀樹, 藤川紗千恵, 鎌田憲彦

AlGaN系深紫外LEDの進展と展望
応用物理学会,応用物理 第80巻 第4号,80(4):319-324 201104
平山秀樹、藤川紗千恵、塚田悠介、鎌田憲彦

250-350nm帯AlGaN系深紫外高輝度LEDの開発
,月刊O plus E,29(6) 2007
平山秀樹、高野隆好、藤川紗千恵、大橋智昭、鎌田憲彦、近藤行廣

特許等知的財産

登録済特許
NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT , US20150176154A1
発光素子及びその製造方法 , WO/2013/008556
窒化物半導体多層構造体およびその製造方法、窒化物半導体発光素子 , WO/2011/027896
Light emitting element and method for manufacturing same , US 2014/0167066A1
NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT , US 2012/0248456A1
MANUFACTURING METHOD OF NITRIDE SEMI-CONDUCTOR LAYER, AND A NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE WITH ITS MANUFACTURING METHOD , US 2010/0270583 A1
NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE , US 2010/0270532 A1
Nitride semi-conductive light emitting device , US 2011/0042713 A1

研究費

科学研究費補助金(研究代表者)
2015-2017 , Sb系希薄窒化物半導体の物性解明と高輝度遠赤外線発光素子の創製 , 基盤研究(C)
2010-2011 , 窒化物半導体を用いた深紫外LED・深紫外LDの開発 , 若手研究(B)
科学研究費補助金(研究分担者)
2016-2018 , テラヘルツ領域極限性能トランジスタの開発 , 基盤研究(C)
2012- , Si基板を用いた縦型大面積・高出力深紫外LEDの研究 , 基盤研究(A)
その他
2020- , 希薄窒化物半導体を用いた遠赤外光デバイスの創製 , 公益財団法人池谷科学技術振興財団
2018-2019 , 希薄窒化物半導体を用いた中赤外-遠赤外線デバイスの研究 , 東京電機大学 平成30年度総合研究所研究課題
2015-2016 , Sb系半導体材料を用いた中赤外発光デバイスの研究 , 公益財団法人泉科学技術振興財団 平成27年度研究助成
2015-2016 , Sb系半導体材料を用いた中赤外線発光素子に関する研究 , カシオ科学振興財団 第33回(平成27年度)研究助成
2015-2016 , Sb系希薄窒化物半導体を用いた遠赤外線LEDと光検出器の開発 , 公益財団法人住友財団 2015年度基礎科学研究助成
2014- , Improved Electron Transport Properties of InSb-QW Structure Using Stepped Buffer Layer for Strain Reduction , 東京理科大学 若手研究者国際学会派遣事業
2013- , Recent progress of AlGaN based deep-UV LEDs , 公益財団法人矢崎科学技術振興記念財団 「2012年度 国際交流援助(後期)」
2013- , 次世代InSb系遠赤外線発光デバイスの開発 , 東京理科大学 平成25年度特定研究助成金 奨励研究助成金
2013- , 低消費電力型高周波高速電子デバイスの高機能化 , 東京理科大学 若手共同研究助成