Assigned Class

Faculty of Engineering

Academic Societies

Academic Societies

Division of Crystals Science and Technology

The Japan Society of Applied Physics

Academic Background

Degree

Dr. (Engineering) , Saitama University

Awards

2013 , 第三回先端フォトニクスシンポジウム　人気ポスター賞

2012 , CREST「新機能創成に向けた光・光量子科学技術」研究領域第5回公開シンポジウム　ポスター賞

2012 , 平成23年度基礎科学・国際特別研究員研究成果発表会　ポスター賞

2010 , 日本結晶成長学会 ナノ構造・エピタキシャル成長分科会　研究奨励賞

2001

Research Career

Research Career

2019 , Saitama University, Graduate School of Science and Engineering, Assistant Professor

2017 - 2019 , Tokyo Denki University, Department of Electrical and Electronic Engineering, Assistant Professor

2013 - 2017 , Tokyo University of Science, Department of Applied Electronics, Assistant Professor

2013 - 2017 , National Institute of Information and Communications Technology (NICT), Cooperative Research Fellow

2013 , RIKEN, Visiting Scientist

2012 - 2013 , RIKEN, Postdoctoral Researcher

2009 - 2012 , RIKEN, Special Postdoctoral Researcher

2005 - 2009 , RIKEN

Other Career

2023 - 2024 ,

Books, Articles, etc.

Articles

Development of Shorter Wavelength 230 nm-Band Far-UVC LEDs and Realization of High Output Power LED Panels
,IEICE Tech. Rep.,290(LQE2023-77):102-105 2023
Mitsuhiro Muta, Hiroyuki Oogami, Kengo Mouri, Hirokazu Kawashima, Noritoshi Maeda, Ajmal Khan, Yukio Kashima, Eriko Katsuura, Yuuki Nakamura, Kou Sumishi, Taiga Kirihara, Sachie Fujikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama

Investigation of the growth mechanism and crystallographic structures of GaSb dots nucleation layer and GaSb thin film grown on Si(001) substrate by molecular beam epitaxy
,Journal of Vacuum Science & Technology A,40:032703 2022
Ryuto Machida, Ryusuke Toda, Shinsuke Hara, Issei Watanabe, Kouichi Akahane, Sachie Fujikawa, Akifumi Kasamatsu, and Hiroki I. Fujishiro

Investigation of off-cut angle of sapphire for epitaxial lateral overgrowth of AlN and fabrication of high-quality AlN template
,Journal of Crystal Growth,588(15):126640 2022
Narihito Okada,Takahiro Saito, Sachie Fujikawa, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama, Kazuyuki Tadatomo

Corrigendum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters
,Nanotechnology,32(36) 2021
M Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Eriko Matsuura, Yukio Kashima, Noritoshi Maeda, Masafumi Jo and Hideki Hirayama

Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters
,Nanotechnology,32(055702) 2020
M Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Eriko Matsuura, Yukio Kashima, Noritoshi Maeda, Masafumi Jo and Hideki Hirayama

Advantage of Heteroepitaxial GaSb Thin-film Buffer and GaSb Dot Nucleation Layer for GaSb/AlGaSb Multiple Quantum Well Structure Grown on Si(100) Substrate by Molecular Beam Epitaxy
,Journal of Crystal Growth,507(1):357-361 2019
Ryuto Machida, Kouichi Akahane, Issei Watanabe, Shinsuke Hara, Sachie Fujikawa, Akifumi Kasamatsu, Hiroki I.Fujishiro

Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates
,J. Phys. D: Appl. Phys.,52(115102):1-10 2019
Takuma Matsumoto, M Ajmal Khan, Noritoshi Maeda, Sachie Fujikawa, Norihiko Kamata and Hideki Hirayama

Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD
,Journal of crystal growth,510:47-49 2019
Sachie Fujikawa, Toshiya Ishiguro, Ke Wang, Wataru Terashima, Hiroki Fujishiro, Hideki Hirayama

アンチモン系トランジスタの開発
,信学技報,117(364):33-36 201712
藤代博記、磯野恭佑、原田義彬、岡直希、竹内淳、藤川紗千恵、町田龍人、渡邊一世、山下良美、遠藤聡、原紳介、笠松章史

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing
,AIP Advances,7:105117 201710
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Wen Hsin Chang, Tetsuji Yasuda, and Tatsuro Maeda

Comparative Study on Noise Characteristics of As and Sb-based High Electron Mobility Transistors
,physica tatus solis (a),214(3):1600599 201703
Takuto Takahashi, Shota Hatsushiba, Sachie Fujikawa, and Hiroki I. Fujishiro,

Effect of low-temperature-grown GaSb layer on formation of high-density and small GaSb islands on Si(100) substrate
,PHYSICA STATUS SOLIDI B,253(4):648-653 201604
Ryuto Machida, Ryusuke Toda, Sachie Fujikawa, Shinsuke Hara, Issei Watanabe, Hiroki I. Fujishiro

Effects of Ga-induced Reconstructed Surfaces and Atomic Steps on the Morphology of GaSb Islands on Si (100)
,APPLIED SURFACE SCIENCE,351:686-692 201510
Ryuto Machida, Ryusuke Toda, Sachie Fujikawa, Shinsuke Hara, Issei Watanabe, Hiroki I. Fujishiro

AlInSbステップバッファ層を用いたInSb量子井戸歪緩和構造の電子輸送特性
,信学技報,115(156):45-49 201507
竹鶴達哉，藤川紗千恵，原田義彬，鈴木浩基，磯野恭佑，加藤三四郎，辻　大介，藤代博記

Recent Progress in AlGaN‐Based Deep‐UV LEDs
,Electronics and Communications in Japan,98(5):1-8 201504
HIDEKI HIRAYAMA, SACHIE FUJIKAWA, and NORIHIKO KAMATA

Improved electron transport properties of InSb quantum well structure using stepped buffer layer for strain reduction
,JOURNAL OF CRYSTAL GROWTH,425:64-69 201502
S. Fujikawa, T. Taketsuru, D. Tsuji, T. Maeda, H.I. Fujishiro

Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal–oxide–semiconductor structures
,JAPANESE JOURNAL OF APPLIED PHYSICS,54(021201):021201-1-021201-5 201501
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Tetsuji Yasuda, and Tatsuro Maeda

窒化物LED高効率化のためのナノインプリントとドライエッチングによる微細加工制御技術
,信学技報,114(338):27-32 201411
鹿嶋行雄，松浦恵里子，嶋谷　聡，小久保光典，田代貴晴，大川貴史，上村隆一郎，長田大和，藤川紗千恵，平山秀樹

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
,Jpn. J.Appl. Phys.,53(100209):100209-1-100209-10 201409
H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, and N. Kamata

III-V DG MOSFETにおける遅延時間の発生メカニズムの解析
, 信学技報,114(168):25-28 201408
矢島悠貴，大濱諒子，藤川紗千恵，藤代博記

貫通転位がInSb HEMTのデバイス特性に与える影響の解析
,信学技報,114(168):13-18 201408
初芝正太，長井彰平，藤川紗千恵，原紳介，遠藤聡，渡邊一世，笠松章史，藤代博記

Comparative Study on Nano-Scale III-V Double-Gate MOSFETs with Various Channel Materials
,Physica Status Solidi C,10(11):1413-1416 201312
Akio Nishida, Kei Hasegawa, Ryoko Ohama, Sachie Fujikawa, Shinsuke Hara, and Hiroki I. Fujishiro

Recent Progress in AlGaN-Based Deep-UV LEDs
,Translated from Denki Gakkai Ronbunshi,133-C(8):1443-1448 201308
HIDEKI HIRAYAMA, SACHIE FUJIKAWA, and NORIHIKO KAMATA

真空アニール法がAl2O3/GaSb MOS界面に与える影響
,信学技報,113(176):37-42 201308
後藤 高寛, 藤川紗千恵,　藤代 博記,　小倉 睦郞, 安田哲二, 前田 辰郎

Ga/Si(111)表面再構成構造を用いたSi(111)基板上GaSbナノ構造の形成
,信学技報,113(176):43-48 201308
町田 龍人, 戸田 隆介, 吉木 圭祐, 藤川 紗千恵, 原 紳介, 色川 勝己, 三木 裕文, 河津 璋, 藤代 博記

AlGaN深紫外LEDの高効率化への取り組み
,信学技報,112(329):87-92 201211
富田優志，藤川紗千恵，水澤克哉，豊田史朗，鎌田憲彦，平山秀樹

Characteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate
,Phys. Status Solidi C,9(3-4):810-813 201201
N. Maeda, H. Hirayama and S. Fujikawa

High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates
,physica status solidi (c),9(3-4):790-793 201201
S. Fujikawa, H. Hirayama and N. Maeda

m軸およびa軸オフ角 C面サファイア基板上のAlN結晶成長の特徴と高出力AlGaN深紫外LEDの作製
,信学技報,111(292):107-112 201111
前田 哲利，藤川 紗千恵，平山 秀樹

284-300nm Quaternary InAlGaN based Deep Ultraviolet Light-Emitting Diodes on Si (111) Substrates
,Applied Physics Express,4:061002 201105
S. Fujikawa, H. Hirayama

Milliwatt power 270nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN templates
,Physica Status Solidi C,6(S2):S474-S477 200903
H. Hirayama, J Norimatsu, N. Noguchi, S. Fujikawa, T. Takano, K. Tsubaki, N Kamata

Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs
,Physica Status Solidi C,6(S2):S356-S359 200903
H. Hirayama, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata

222-282nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
,Physica Status Solidi A,206(6):1176-1182 200903
H Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata

222-282nm AlGaN and InAlGaN based deep-UV-LEDs fabricated on high-quality AlN template
,SPIE,7216:721621-1-721621-16 200902
Hirayama, N. Noguchi, S. Fujikawa, J. Norimatsu and N. Kamata, T. Takano and K. Tsubaki

Realization of 270 nm band AlGaN based UV-LED on large area AlN template with high crystalline quality
,Physica Status Solidi C,6(S2):S462-S465 200902
T. Takano, S. Fujikawa, K. Tsubaki, H. Hirayama

Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers
,Phys. Status Solidi C,6(S2):S784-S787 200901
S. Fujikawa, H. Hirayama, T. Takano and K. Tsubaki

280nm帯InAlGaN高出力紫外LED
,電子情報通信学会技術研究報告,108(323):83-88 200811
平山秀樹、藤川紗千恵、高野隆好、椿健治

ELO-AlNテンプレート上に作製した270nm帯AlGaN紫外LED
,電子情報通信学会技術研究報告,107(253):29-34 200811
乗松潤、平山秀樹、野口憲路、藤川紗千恵、高野隆好、椿　健治、鎌田憲彦

340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers
,Phys. Status Solidi C,5(6):2280-2282 200804
S. Fujikawa, T. Takano, Y. Kondo, H. Hirayama

Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow
,Phys. Status Solidi C,5(6):2260-2262 200804
S. Fujikawa, T. Takano, Y. Kondo, H. Hirayama

Realization of 340-nm-Band High-Output-Power (>7mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN
,Jpn.J.Appl. Phys.,47(4):2941-2944 200804
S. Fujikawa, T. Takano, Y. Kondo, H. Hirayama

Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by anti-surfactant method
,phys. stat. sol. (c),5(6):2312-2315 200804
H. Hirayama, S. Fujikawa

Realization of 340nm-band high-power UV-LED using p-type InAlGaN
,Journal of Light & Visual Environment, Special Issue,32(2):83-87 200803
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

Remarkable improvement in output power for an InAlGaN based ultraviolet LED by improving the crystalline quality of AlN/AlGaN templates
,phys. status sol. (c),5(6):2102-2104 200803
T. Takano, S. Fujikawa, Y. Kondo, H. Hirayama

p-InAlGaNと高品質AlNを用いた340nm帯高出力LED
,電子情報通信学会技術研究報告,107(253):29-34 200710
藤川紗千恵、高野隆好、近藤行廣、平山秀樹

330nm帯紫外発光InAlGaN量子井戸からの高い内部量子効率の観測
,電子情報通信学会技術研究報告,105(326):66-72 200510
平山秀樹、高野隆好、大橋智昭、藤川紗千恵、鎌田憲彦、近藤行廣

Presentation

230nm帯far-UVCLEDの短波長化の検討と高出力LEDパネルの実現
電子通信情報学会,電子通信情報学会 202412
牟田実広、大神裕之、毛利健吾、河島宏和、前田哲利、Khan Ajmal、鹿嶋行雄、松浦恵里子、中村勇稀、住司光、桐原大河、藤川紗千恵、矢口裕之、祝迫恭、平山秀樹

分極ドープ層を用いた 222 nm AlGaN far-UVC LED の高効率化
応用物理学会,2024年第71回応用物理学会春季学術講演会:24p-61C-12 202403
Rangaraju Harshitha、中村 勇稀、住司 光、Khan Ajma、藤川 紗千恵、矢口 裕之、遠藤 聡、藤代 博記、祝迫 恭、平山 秀樹

分極ドープ層を用いた 222 nm AlGaN far-UVC LED の高効率化
応用物理学会,2024年第71回応用物理学会春季学術講演会:24p-61C-12 202403
Rangaraju Harshitha、中村 勇稀、住司 光、Khan Ajmal、藤川 紗千恵,、矢口 裕之、遠藤 聡、藤代 博記、祝迫 恭、平山 秀樹

Growth and Characterization of Sb-based Dilute Nitride Semiconductors by Sputtering
2023 MRS Fall Meeting and Exhibit:SF05-10.03 202311
Sachie Fujikawa

Efficiency Increase in 230 nm AlGaN far-UVC LED by Changing Quantum Well Structure
The Japanese Association for Crystal Growth(JACG), The Japan Society of Wide Gap Semiconductors(WideG), R032 Committee on Crystal Growth for Industrial Innovation, The Japan Society of Applied Physics等,14th International Conference on Nitride Semiconductors (ICNS-14),TuP-OD-15 202311
Yuya Nagata, Fumiya Chugenji, Noritoshi Maeda, Ajmal Khan, Sachie Fujikawa, Hiroyuki Yaguchi, Yasushi Iwaisako, Hideki Hirayama

Realization of EQE 0.008 % operation in 221.5 nm AlGaN far-UVC LED
The Japanese Association for Crystal Growth(JACG), The Japan Society of Wide Gap Semiconductors(WideG), R032 Committee on Crystal Growth for Industrial Innovation, The Japan Society of Applied Physics等,14th International Conference on Nitride Semiconductors (ICNS-14),OD1-4 202311
Yuki Nakamura, Kou Sumishi, Sachie Fujikawa, Hiroyuki Yaguchi , Akira Endoh, Hiroki Fujishiro, Yasushi Iwaisako , Hideki Hirayama

DCスパッタ法によるInSb1-xNx薄膜の成長条件の検討
応用物理学会,第81回応用物理学会秋季学術講演会:21p-P05-9 202309
藤川 紗千恵、矢口 裕之

230 nm AlGaN far-UVC LEDの発光効率の量子井戸構造依存性
応用物理学会,第81回応用物理学会秋季学術講演会:19p-B101-12 202309
永田 裕弥、仲元寺 郁弥、前田 哲利、藤川 紗千恵、矢口 裕之、祝迫 泰、平山 秀樹

221.5 nm far-UVC AlGaN LED における EQE0.008 %動作の実現
応用物理学会,第81回応用物理学会秋季学術講演会:19p-B101-3 202309
中村 勇稀、住司 光、藤川 紗千恵、矢口 裕之、遠藤 聡、藤代 博記、祝迫 恭、平山 秀樹

Fabrication of InSb(N) thin film by DC magnetron sputtering
International Conference on Crystal Growth and Epitaxy (ICCGE) 20 202308
Sachie Fujikawa, Yuto Shimbo

Electronic structure analysis of InSb1-xNx alloys by first-principles calculation
International Conference on Crystal Growth and Epitaxy (ICCGE) 20 202308
Sachie Fujikawa, Yoshitaka Fujiwara, Hiroyuki Yaguchi

窒素δドープ GaAs 中の等電子トラップに局在した励起子分子の束縛エネルギーに関する研究
2023年第70回応用物理学会春季学術講演会 202303
矢野 裕子，高宮 健吾，藤川 紗千恵，八木 修平，矢口 裕之，小林 真隆，秋山 英文

第一原理計算によるInSb1-xNx混晶の電子構造解析
第83回応用物理学会秋季学術講演会 202209
藤川 紗千恵，藤原 彬嵩，矢口 裕之

電子ブロック層の最適化による250nm AlGaN UVC-LEDの出力改善
第80回応用物理学会秋季学術講演会,20a-E302-3 201909
中村 励志、藤川 紗千恵、前田 哲利、遠藤 聡、藤代 博記、平山 秀樹

微傾斜サファイア基板上AlNの選択横方向成長
第80回応用物理学会秋季学術講演会,20p-E310-4 201909
斉藤 貴大、中村 亮太、藤川 紗千恵、金 輝俊、前田 哲利、岡田 成仁、平山 秀樹、只友 一行

The influence of both Mg-concentration and excimer laser annealing (ELA) on p-AlGaN cladding layer for the application of AlGaN-based UVB Laser Diodes
The 80th JSAP Autumn Meeting 2019 201909
Muhammad Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama

Epitaxial Lateral Overgrowth of AlN with Partially Non-dislocation-region on Vicinal AlN template
13th International Conference on Nitride Semiconductors (ICNS-13) 201907
F. Kim, T. Saito, S. Fujikawa, N. Maeda, N. Okada, H. Hirayama and K. Tadatomo

Realization of High Light O utput Power in AlGaN-Based UVB LED at 310±2nm Emission Using Highly Relaxed (50%) n-AlGaN Electron Injection Layer
3th International Conference on Nitride Semiconductors (ICNS-13) 201907
M.A. Khan, N.Maeda, S.Fujikawa, Masafumi Jo, Yoichi Yamada and Hideki Hirayama

GaN系QCL実現に向けたSi基板上GaN/AlGaN超格子構造の作製
第6回RAPシンポジウム 201811
藤川 紗千恵、石黒 稔也、王 科、藤代 博記、平山 秀樹

Development of 240 nm-band high output power AlGaN UVC LED
,International workshop on Nitride Semiconductors(IWN2018),OD15-2 201811
Toshiya Ishiguro, Reiji Nakamura, Sachie Fujikawa, Noritoshi Maeda, Ryuto Machida, Hiroki Fujishiro, and Hideki Hirayama

240nm帯AlGaN UVC-LEDの⾼出⼒化の検討
第79回応用物理学会秋季学術講演会,21a-146-8 201809
⽯⿊ 稔也, 中村 励志, 藤川 紗千恵, 前⽥ 哲利, 町⽥ ⿓⼈, 藤代 博記

AlNの選択横⽅向成⻑におけるストライプ⽅位依存性
第79回応用物理学会秋季学術講演会,19p-146-13 201809
⾦ 輝俊, ⻫藤 貴⼤, 藤川 紗千恵, 前⽥ 哲利, 岡⽥ 成仁, 平⼭ 秀樹, 只友一行

Evaluation of GaN-based THz-QCL structure on Si substrate grown by MOCVD
,19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX),P4823 201806
Sachie Fujikawa, Toshiya Ishiguro, Ke Wang, Wataru Terashima, Hiroki Fujishiro, Hideki Hirayama

アンチモン系トランジスタの開発
電子デバイス研究会 201712
藤代博記、磯野恭佑、原田義彬、岡直希、竹内淳、藤川紗千恵、町田龍人、渡邊一世、山下良美、遠藤聡、原紳介、笠松章史

Si基板上へのGaN系THz-QCL構造のMOCVD成長と評価
第78回応用物理学会秋季学術講演会,8p-A301-8 201709
石黒 稔也、藤川 紗千恵、王 科、前田 哲利、町田 龍人、藤代 博記、平山 秀樹

GaSb薄膜 ／ドット核形成層を用いたSi(100)基板上のGaSb/AlGaSb MQW構造の作製
第78回応用物理学会秋季学術講演会,6p-PA7-8 201709
町田 龍人、赤羽 浩一、渡邊 一世、原 紳介、藤川 紗千恵、笠松 章史、藤代 博記

GaAs(100)基板上ヘテロエピタキシャルGaSb薄膜成長の界面制御
第78回応用物理学会秋季学術講演会,6p-PA7-9 201709
伊藤 峰水, 鈴木 浩基, 渡邊 優介, 藤川 紗千恵, 町田 龍人, 藤代 博記

低温成長InSbがGaAs基板上InSb薄膜成長に与える影響
第78回応用物理学会秋季学術講演会,6p-PA7-11 201709
渡邊 優介, 椎野 響太, 伊藤 峰水, 鈴木 浩基, 藤川 紗千恵, 町田 龍人, 藤代 博記

Monte Carlo Study on Electron Transport Properties of GaxIn1-xSb HEMT Structures Considering Roughness Scattering
,Compound Semiconductor Week 2017 (CSW 2017) 201705
Yui Fujisawa, Takuto Takahashi, Shougo Kawamura, Sachie Fujikawa and Hiroki Fujishiro

Fabrication of GaSb/AlGaSb Multi Quantum Wells Structure Grown on Si(100) Substrate Using Heteroepitaxial GaSb Thin-film and Dots Nucleation Layers
,IPRM 2017 on Indium Phosphide and Related Materials 201705
R. Machida, K. Akahane, I. Watanabe, S. Hara, S. Fujikawa, A. Kasamatsu, and H.I. Fujishiro

Electron Transport Properties of InSb/Ga0.35In0.65Sb Composite Channel Structure
,Compound Semiconductor Week 2017 (CSW 2017), ISCS 2017 The 44th Symposium on Compound Semiconductor,P2.53 201705
S. Fujikawa, T. Iwaki, Y. Harada, J.Takeuchi, Y.Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, and A. Kasamatsu, H.I. Fujishiro

InSb/Ga0.35In0.65Sb複合チャネル構造の電気的特性の評価
第64回応用物理学会春季学術講演会,16a-P4-27 201703
岩木拓也、原田義彬、竹内淳、遠藤勇輝、藤川紗千恵、藤代博記

Research and development of InP, GaN and InSb-based HEMTs and MMICs for terahertz-wave wireless communications
,2016 IEEE Compound Semiconductor IC Symposium 201610
I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, I. Hosako,H. Hamada, T. Kosugi, M. Yaita, A. E. Moutaouakil, H. Matsuzaki, O. Kagami,T. Takahashi, Y. Kawano, Y. Nakasha, N. Hara,D. Tsuji, K. Isono, S. Fujikawa, and H. I. Fujishiro

InSb-based HEMTwith Over 300 GHz-fT using Al0.25In0.75Sb/Al0.15In0.85Sb stepped buffer layer for strain reduction
,19th International Conference on Molecular Beam Epitaxy (MBE2016) 201609
S. Fujikawa, K. Isono, Y. Harada, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro

Electron Transport Properties of InSb/GaInSb Composite Channel
,19th International Conference on Molecular Beam Epitaxy (MBE2016) 201609
S. Fujikawa, J. Takeuchi, Y. Harada, and H. I. Fujishiro

Poly-InSb nMOSFETs for monolithic 3DIC
,Solid State Devices and Materials (SSDM2016) 201609
Masahiro Takahashi, Toshifumi Irisawa, Wen-Hsin Chang, Junji Tominaga, Sachie Fujikawa, Hiroki I. Fujishiro, and Tatsuro Maeda

Growth of GaSb Dots Nucleation Layer and Thin -Film GaSb on Si(100) Substrate by Molecular Beam Epitaxy
,The 43rd International Symposium on Compound Semiconductors (ISCS) 2016 201606
Ryuto Machida, Ryusuke Toda, SachieFujikawa, Shinsuke Hara, Issei Watanabe, Kouichi Akahane, Akifumi Kasamatsu, Hiroki I. Fujishiro

Comparative Study on Noise Characteristics of As and Sb-based HEMTs
,The International Conference on Indium Phosphide and Related Materials (IPRM) 2016 201606
Takuto Takahashi, Shota Hatsushiba, Sachie Fujikawa, Hiroki I. Fujishiro

InSb-based HEMT with Over 300 GHz-fT using Evaporated SiOx Film
,The International Conference on Indium Phosphide and Related Materials (IPRM) 2016 201606
K. Isono, D. Tsuji, T. Taketsuru, S. Fujikawa, I. Watanabe Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro

DEPENDENCE OF InSb/GaSb FILMS GROWN ON FLAT AND VICINAL GaAs (100) SUBSTRATES
,31st NORTH AMERICAN MOLECULAR BEAM EPITAXY CONFRENCE (31th NAMBE) 201510
S. Fujikawa, H. Suzuki, H. I. Fujishiro

Study on Impacts of Dislocation and Roughness Scatterings on Electron Transport in InSb QW Comparing Monte Carlo Simulation and Measurements
,Compound Semiconductor Week 2015 201507
Shota Hatsushiba, Sachie Fujikawa and Hiroki Fujishiro

Growth of GaSb Islands on Si(100) with Low-temperature Grown GaSb Layer
,Compound Semiconductor Week 2015 (CSW 2015) 201507
Ryuto Machida, Ryusuke Toda, Sachie Fujikawa, Shinsuke Hara, Hiroki Fujishiro

Improved Electron Transport Properties of InSb-QW Structure Using Stepped Buffer Layer for Strain Reduction
,18th International Conference on Molecular Beam Epitaxy(MBE2014),P48 201409
S. Fujikawa, D. Tsuji, T. Taketsuru, T. Maeda and H. I. Fujishiro

Characterization of InSb-QW structures with Al0.25In0.75Sb / Al0.15In0.85Sb buffer layer for strain reduction
,8th Workshop on Compound Semiconductor Devices and Integrated Circuits (38th WOCSDICE),We-D1-2 201406
S. Fujikawa, Y. Takagi, T. Maeda, T. Taketsuru, D. Tsuji and H. I. Fujishiro

Analysis of Delay Times in III-V MOSFETs with Various Channel Materials
,The 41st International Symposium on Compound Semiconductor (ISCS 2014) 201405
Ryoko Ohama, Yuki Yajima, Akio Nishida, Sachie Fujikawa and Hiroki I. Fujishiro

Demonstration of Ni-GaSb metal S/D GaSb pMOSFETs with vacuum annealing on GaAs substrates
,44th IEEE Semiconductor Interface Specialists Conference(SISC) 201312
T. Gotow, S. Fujikawa, Hiroki I. Fujishiro, M. Ogura ,T. Yasuda, T. Maeda

Growth Morphology of GaSb Islands on Ga-Induced Si(100)-2×2 Reconstructed Surface
,12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures in conjunction with 21st International Colloquium on Scanning Probe Microscopy(ACSIN-12&ICSPM21) 201311
Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa, Shinsuke Hara, Akira Kawazu, Hiroki I.Fujishiro

Frequency Limits of Nanoscale HEMTs with Various Channel Materials
,10th Topical Workshop on Heterostructure Microelectronics (THWM 2013) 201309
S. Nagai, Y. Nagai, S. Fujikawa, H. I. Fujishiro, S. Hara, A. Endoh, I. Watanabe and A. Kasamatsu

AlGaN-based Deep-UV LEDs Fabricated on Connected-Pillar AlN Buffer
,The 10th Conference on Lasers and Electro-Optics Pacific Rim, and The 18th Opto Electronics and Communications Conference/Photonics in Switching 2013 (CLEO-PR & OECC/PS 2013) 201306
H. Hirayama, Y. Tomita, S. Toyoda, S. Fujikawa and N. Kamata

Recent progress of AlGaN based deep-UV LEDs
,E-MRS(European Materials Research Society) 2013 Spring Meeting 201305
S. Fujikawa, N. Kamata and H. Hirayama

Realization of High-Efficiency Deep-UV LEDs using transparent p-AlGaN Contact Layer
,Compound Semiconductor Week(CSW 2013),IPRM 2013(The 25th International Conference on Indium Phosphide and Related Materials) 201305
Noritoshi Maeda, Sachie Fujikawa and Hideki Hirayama

Improvement of light extraction efficiency of AlGaN deep-UV LED using 2-dimensional photonic crystal (2D-PhC)
,International Workshop on Nitride Semiconductors 2012 (IWN2012) 201210
S.Fujikawa, H. Hirayama, Y. Kashima, H. Nishihara, T. Tashiro, T. Ohkawa, S. W. Youn and H. Takagi

Improvement of light extraction efficiency of AlGaN deep-UV LED using 2-dimensional photonic crystal (2D-PhC)
,4th International Symposium on Growth of III-Nitrides (ISGN-4) 201207
S.Fujikawa, H. Hirayama, Y. Kashima, H. Nishihara, T. Tashiro, T. Ohkawa, S. W. Youn and H. Takagi

High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates
,9th International Conference on Nitride Semiconductors (ICNS-9) 201107
S. Fujikawa, H. Hirayama, N. Maeda

High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates
,5th Asia-Pacific Workshop on Widegap Semiconductors(APWS-2011) 201105
S. Fujikawa, H. Hirayama and N. Maeda

Realization of InAlGaN-based deep UV LEDs on Si (111) substrates
,International Workshop on Nitride semiconductors (IWN2010) 201009
S. Fujikawa, H. Hirayama

First Achievement of Deep-UV LED on Si substrate
,2010 IEEE International Semiconductor Laser Conference 201009
S. Fujikawa, H. Hirayama

Marked Increase of Injection Efficiency in AlGaN Deep-UV LEDs using MQB
,9th International Conference on Nitride Semiconductors (ICNS-9) 201009
H. Hirayama, Y. Tsukada, M. Akiba, Y. Tomita, S.Fujikawa, N. Maeda, N. Kamata

Growth of AlN with Low Threading Dislocation Density on Sapphire Fabricated by controlling AlN Nuclei using 2inch x 3 MOCVD System
,8th International Coference on Nitride Semiconductors (ICNS-8) 200910
T. Takano, H. Hirayama, S. Fujikawa, K. Tsubaki

280nm-band InAlGaN deep-UV LED on Silicon (111) substrate
,Third International Symposium on Growth of Ⅲ-Nitrides(ISGN-3) 200910
S. Fujikawa, H. Hirayama

Achievement of High-quality Quaternary InAlGaN Quantum Wells for Deep-UV LEDs by using Quite Low Growth Rate Epitaxy
,8th International Conference on Nitride Semiconductors (ICNS-8) 200910
S. Fujikawa, H. Hirayama, T. Takano, K. Tsubaki

222-282nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template
,SPIE Photonics West 2009 200901
H. Hirayama, N. Noguchi, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata

Realization of 270 nm Band AlGaN Based UV-LED on Large Area AlN Template with High Crystalline Quality
,International Workshop on Nitride Semiconductors 2008 (IWN2008),Tu2b-P13 200810
T. Takano, S. Fujikawa, K. Tsubaki, and H. Hirayama

Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template
, International Workshop on Nitride Semiconductors 2008 (IWN2008),We2b-B5 200810
J. Norimatsu, H. Hirayama, N. Noguchi, S. Fujikawa, T. Takano, K. Tsubaki, and N. Kamata

Fabrication of low threading dislocation density ELO-AlN template for the application to deep-UV LED
,International Workshop on Nitride Semiconductors 2008 (IWN2008),We1-B2 200810

Extremely high efficiency 280 nm-band emission from quaternary InAlGaN QWs realized by controlling Si-doped layers
,International Workshop on Nitride Semiconductors 2008 (IWN2008),Th5-F6 200810
S. Fujikawa, H. Hirayama, T. Takano, and K. Tsubaki,

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
,International Workshop on Nitride Semiconductors 2008 (IWN2008),We2b-B1 200810
H. Hirayama, S. Fujikawa, N. Noguchi, T. Yatabe, T. Takano, K. Tsubaki, and N. Kamata

Extremely high efficiency PL emission from 280 nm-band InAlGaN QWs realized by Si-doped layer control
,Second International Symposium on Growth of III-Nitrides (ISGN-2),Mo-54 200807
S. Fujikawa, H. Hirayama, T. Takano and K. Tsubaki

280 nm-Band Quaternary InAlGaN Quantum Well Deep-UV LEDs with p-InAlGaN Layers
,International Symposium on Semiconductor Light Emitting Devices 2008 (ISSLED2008),K4 200805
S. Fujikawa, H. Hirayama, T. Takano and K. Tsubaki

Realization of 340nm-band high-power UV-LED using p-type InAlGaN
,First International Conference on White LEDs and Solid State Lighting (White LEDs-07),We-P28 200711
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

340nm-band High-power (>7 mW) InAlGaN Quantum Well UV-LED Using p-type InAlGaN Layers
,The 34th International Symposium on Compound Semiconductors (ISCS2007),ThC P33 200710
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

Realization of 340nmband high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN
,2007 International Conference on Solid State Devices and Materials (SSDM2007),E-8-5 200709
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

Remarkable Improvement of Output Power for InAlGaN Based Ultraviolet LED by Improving the Crystal Quality of AlN/AlGaN Templates
,7th Int'l Conference of Nitride Semiconductors (ICNS-7),ThP82 2007
T. Takano, S. Fujikawa, Y. Kondo and, H. Hirayama

Quaternary InAlGaN Quantum-Dot UV-LED Emitting at 335nm Fabricated by Anti-Surfactant Method
,7th Int'l Conference of Nitride Semiconductors (ICNS-7),ThP24 2007
H. Hirayama and S. Fujikawa

340nm-Band High-Power (>7mW) InAlGaN Quantum Well UV-LED Using p-Type InAlGaN Layers
,7th Int'l Conference of Nitride Semiconductors (ICNS-7),J2 2007
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

Realization of 340nm-Band High-Power InAlGaN-Based UV-LEDs by the Suppression of Electron Overflow
,7th Int'l Conference of Nitride Semiconductors (ICNS-7),ThP81 2007
S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama

Remarkable Increase of UV Emission Efficiency of InAlGaN Quantum Well by using High-quality AlN/AlGaN Buffers
,13th International Conference on Metal Organic Vapor Phase Epitaxy IC-MOVPE-XIII),Tu-P.30 2006
T. Takano, H. Hirayama, S. Fujikawa and Y. Kondo

Remarkable Improvement of Output Power for InAlGaN Based UV-LED by Ni/Au Electrode
,International Workshop on Nitride Semiconductors 2006 (IWN2006),TuP2-38 2006
T. Takano, H. Hirayama, S. Fujikawa and Y. Kondo

Others

ナローバンドギャップ半導体を用いたヘテロ構造作製と物性解析
公益財団法人村田学術振興財団,公益財団法人村田学術振興財団 第37回(2021年度)研究成果助成報告書 202312
藤川紗千恵

希薄窒化物半導体を用いた遠赤外光デバイスの創製
公益財団法人池谷科学技術財団,池谷科学振興財団研究助成報告書 202303
藤川紗千恵

光・電子デバイスの研究に携わって
映像情報メディア学会,映像情報メディア学会誌,68(12):922-923 201412
藤川紗千恵

AlGaN系深紫外LEDの進展と今後の展望
,InterLab特集「注目の技術とその傾向」,112:10-16 2014
平山秀樹、前田哲利、藤川紗千恵、豊田史郎、金澤裕也、鎌田憲彦、椿健治、阪井淳、高野隆好、美濃卓哉、野口憲路

素子透明化によるAlGaN深紫外LEDの光取出し効率の高効率化
,OPTRONICS,33(386):58-66 2014
平山秀樹、前田哲利、藤川紗千恵、豊田史朗、鎌田憲彦

AlGaN系深紫外LEDの進展と今後の展望
電気学会,電気学会論文誌C(電子・情報・システム部門誌),133(8):1443-1448 201304
平山秀樹, 藤川紗千恵, 鎌田憲彦

AlGaN系深紫外LEDの進展と展望
応用物理学会,応用物理 第80巻 第4号,80(4):319-324 201104
平山秀樹、藤川紗千恵、塚田悠介、鎌田憲彦

250-350nm帯AlGaN系深紫外高輝度LEDの開発
,月刊O plus E,29(6) 2007
平山秀樹、高野隆好、藤川紗千恵、大橋智昭、鎌田憲彦、近藤行廣

Patents

Patents

NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT , US20150176154A1

発光素子及びその製造方法 , WO/2013/008556

窒化物半導体多層構造体およびその製造方法、窒化物半導体発光素子 , WO/2011/027896

Light emitting element and method for manufacturing same , US 2014/0167066A1

NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT , US 2012/0248456A1

MANUFACTURING METHOD OF NITRIDE SEMI-CONDUCTOR LAYER, AND A NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE WITH ITS MANUFACTURING METHOD , US 2010/0270583 A1

NITRIDE SEMI-CONDUCTOR LIGHT EMITTING DEVICE , US 2010/0270532 A1

Nitride semi-conductive light emitting device , US 2011/0042713 A1

Light emitting element and method for manufacturing same , US9349918B2

Nitride semi-conductive light emittingdevice

Manufacturing method of nitride semi-conductor layer, and a nitride semi-conductor light emitting device with its manufacturing method

Nitride semi-conductor light emitting device and a process of producing a nitride semi-conductor light emitting device

Research Grants