Keywords
Profile
YAGI Shuhei
| ■Faculty: | Graduate School of Science and Engineering | ■TEL: | ||
| ■Position: | Associate Professor | ■FAX: | ||
| ■Address: | 255 Shimo-Okubo, Sakura-ku, Saitama City, Saitama 338-8570, JAPAN | ■Mail Address: | Shuhei_[at]_mail.saitama-u.ac.jp | |
| ■Web site: | http://opt.eeap.saitama-u.ac.jp/ |
Profile
Assigned Class
- Faculty of Engineering
Research Field
- Semiconductor engineering
- Optoelectronics
- keyword:Semiconductor engineering , Crystal Growth , Solar cells , III-V compound semiconductors , Dilute nitride semiconductors , Molecular beam epitaxy
Academic Societies
- Academic Societies
- The Japan Photovoltaic Society
Academic Background
- Graduate School
- Tokyo Institute of Technology , (Doctor course , Department of Physical Electronics) , 2004(Completed)
- Tokyo Institute of Technology , (Master course , Department of Physical Electronics) , 2001(Completed)
- College
- University of Electro-Communications , (Department of Electronics) , 1999(Graduated)
- 1997(Graduated)
- Degree
- Doctor of Engineering , Tokyo Institute of Technology
- Master of Engineering , Tokyo Institute of Technology
Research Career
- Research Career
- 2015 , Associate Professor, Saitama University
- 2010 - 2015 , Assistant Professor, Saitama University
- 2009 - 2010 , Project Assistant Professor, The University of Tokyo
- 2008 - 2009 , Project Research Associate, The University of Tokyo
- 2007 - 2008 , Research Associate, Tsukuba University
- 2006 - 2007 , Postdoc Researcher, National Institute for Materials Science
- 2004 - 2006 , Postdoc Researcher, National Institute for Materials Science
Research
Books, Articles, etc.
- Books
-
Physics and Technology of Silicon Carbide Devices: Chapter 7 Thermal Oxidation Mechanism of Silicon Carbide
InTech 201210
Y. Hijikata, S. Yagi, H. Yaguchi and S. Yoshida - Articles
-
Nitrogen concentration dependence of two-step photocurrent generation by below-gap excitation in GaPN alloys
,Physica Status Solidi B:2300369 2024
A. Qayoom, S. Yagi, Hiroyuki Yaguchi -
Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells
,Japanese Journal of Applied Physics,62(SK):SK1008 202303
S. Yagi, S. Numata, Y. Shoji, Y. Okada and H. Yaguchi -
Photocurrent enhancement by below bandgap excitation in GaPN
,Japanese Journal of Applied Physics,62:SK1038 2023
A. Qayoom, S. Ferdous, S. Yagi, and H. Yaguchi -
Two-Step Photocurrent Generation through Band Tail States in GaPN-Based Intermediate Band Solar Cells
,North American Academic Research,6:20 2023
A. Qayoom, S. Yagi, Hiroyuki Yaguchi -
Activation of two dopants, Bi and Er in δ-doped layer in Si crystal
,Nano Futures,5:045005 202201
K. Murata, S. Yagi, T. Kanazawa, S. Tsubomatsu, C. Kirkham, K. Nittoh, D. R Bowler and K. Miki -
Detection of Nonradiative Recombination Centers in GaPN by Combining Two-Wavelength Excited Photoluminescence and Time-Resolved Photoluminescence
,Phisica Status Solidi B,258:2100119 2021
S. Ferdous, H. Iwai, N. Kamata, H. Yaguchi, S. Yagi -
Detection of Nonradiative Recombination Centers in GaPN(N:0.105%) by Below-Gap Excitation Light
,Physica Status Solidi B,257(2):1900377 2020
S. Fedous, N. Kamata, S. Yagi, and H. Yaguchi -
Spectral Change of E- Band Emission in a GaAs:N delta-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation
,Journal of ELECTRONIC MATERIALS,49(2):1550 2020
Md. D. Haque, N. Kamata, A.Z.M. T. Islam, S. Yagi, and H. Yaguchi -
Photoluminescence intensity change of GaP1−xNx alloys by laser irradiation
,AIP Advances,10: 095302 2020
Md. Z. Sultan, A. Shiroma, S. Yagi, K. Takamiya, and H. Yaguchi -
Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N delta-doped superlattice structure
,Optical Materials,89:521-527 2019
Md. D. Haque, N. Kamata, A.Z.M. T. Islam, Z. Honda, S. Yagi, H. Yaguchi -
Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates
,Jpn. J. Appl. Phys.,58:SC1051 2019
K. Okura, K. Takamiya, S. Yagi, and H. Yaguchi -
Nonradiative recombination centers in GaAs:N δ-doped superlattice revealed by two-wavelength-excited photoluminescence
,Journal of Applied Physics,123(16):161426 2018
M.D. Haque, N. Kamata, T. Fukuda, Z. Honda, S. Yagi, and H. Yaguchi, and Y. Okada -
Effects of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based electronic donor material
,Japanese Journal of Applied Physics,57:08RE09 2018
Y. Akiyama, H. Tachibana, R. Azumi, T. Miyadera, M. Chikamatsu, T. Koganezawa, S. Yagi and H. Yaguchi -
Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation
,Materials Science Forum,897:315-318 201705
K. Kondo, N. Kamata, H. Yaguchi, S. Yagi, T. Fukuda, and Z. Honda -
Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation
,Physica Status Solidi B,254:1600566 2017
N. Kamata, M. Suetsugu, D. Haque, S. Yagi, and H. Yaguchi, F. Karlsson, and P.O. Holtz -
Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates
,Physica Status Solidi B,254(2):1600542 2017
K. Ishii, S. Yagi, and H. Yaguchi -
Growth of InN/GaN dots on 4H-SiC(0001) 4o off vicinal substrates by molecular beam epitaxy
,Journal of Crystal Growth,477:201-206 2017
K. Matsuoka, S. Yagi, and H. Yaguchi -
Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells
,Physica Status Solidi B,255(5):201700454(1-4) 2017
K. Takamiya, S. Yagi, H. Y. H. Akiyama, K. Shojiki, T. Tanikawa, and R. Katayama -
Molecular beam epitaxial growth of intermediate band materials based on GaAs:N δ-doped superlattices
,Jpn. J. Appl. Phys.,54(8S1):08KA07 201507
T. Suzuki, K. Osada, S. Yagi, S. Naitoh, Y. Shoji, H. Hijikata, Y. Okada, and H. Yaguchi -
Surface Orientation Dependence of SiC Oxidation Process Studied by In-Situ Spectroscopic Ellipsometry
,Mat. Sci. Forum,821-823:371-374 201506
D. Goto, S. Yagi, Y. Hijikata, and H. Yaguchi -
Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy
,Japanese Journal of Applied Physics,54:051201 201504
R. G. Jin, S. Yagi, Y. Hijikata, and H. Yaguchi -
Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry
,Jounal of Applied Physics,117(9):095306 2015
D. Goto, Y. Hijikata, S. Yagi, and H. Yaguchi -
Photoluminescence Study of Oxidation-Induced Stacking Faults
,Mat. Sci. Forum,821-823:328-330 2015
Y. Miyano, S. Yagi, Y. Hijikata, and H. Yaguchi -
Control of Intermediate Band Configuration in GaAs:N δ-Doped Superlattice
,Jpn. J. Appl. Phys.,54:08KA04 2015
K. Osada, T. Suzuki, S. Yagi, S. Naitoh, Y. Shoji, H. Hijikata, Y. Okada, and H. Yaguchi -
Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
,AIP Advances,5:127116 2015
Y. Miyano, R. Asafuji, S. Yagi, Y. Hijikata, and H. Yaguchi -
Si emission into the oxide layer during oxidation of silicon carbide
201402
Y. Hijikata, Y. Akasaka, S. Yagi , and H. Yaguchi -
Enhanced optical absorption due to E+-related band transition in GaAs:N delta-doped superlattices
,Applied Physics Express,7(10):102301 2014
S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, and H. Yaguchi -
Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys
,Physica Status Solidi A,211(4):752-755 2014
W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi -
Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N Delta-Doped Superlattices
,Japanese Journal of Applied Physics,vol. 52:102302 201310
S. Yagi, S. Noguchi, Y. Hijikata, S. kuboya, K. Onabe, and H. Yaguchi -
Analysis of Electronic Structures of Nitrogen Delta-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells
,IEEE Journal of Photovoltaics,3(4):pp. 1287-1291 201309
S. Noguchi, S. Yagi, D. Sato, Y. Hijikata, K. Onabe, S. Kuboya and H. Yaguchi -
RF-MBE growth of cubic InN nano-scale dots on cubic GaN
,Journal of Crystal Growth,vol. 378 :454-458 201309
J. Suzuki, M. Orihara, S. Yagi, Y. Hijikata, and H. Yaguchi -
Direct Evidence of Carrier Excitation from Intermediate Band States in GaPN by Two-Wavelength Excited Photoluminescence
,Applied Physics Express,vol. 6:092401 201307
A. Z. Md. T. Islam, T. Hanaoka, K. Onabe, S. Yagi, N. Kamada and H. Yaguchi -
Staked Structure of Self-Organized Cubic InN Nano-Dots Grown by Molecular Beam Epitaxy
,Phys. Status Solidi C,vol. 10:pp. 1545-1548 2013
S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata and H. Yaguchi -
Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates
,Journal of Crystal Growth,vol. 378:pp. 85-87 2013
R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi -
Model calculations of SiC oxide growth rates at sub-atomospheric pressures using the Si and C emission model
,Materials Science Forum,vols. 740-742:pp. 833-836 2013
Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida -
Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
, Journal of Applied Physics,112(2):024502 201207
K. Kouda, Y. Hijikata, S.Yagi, H. Yaguchi, and S.Yoshida -
Micro-Photoluminescence Study on the Influence of Oxidation on Satacking Faults in 4H-SiC Epilayers
,Applied Physics Express,5:051302-051305 201205
H. Yamagata, S. Yagi, Y. Hijikata and H. Yaguchi -
Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
,Mater. Sci. Forum,706-7009:2916-2921 201201
K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi -
RF-MBE growth of semipolar InN and InGaN(10-13) on GaAs(110)
,Physica Status Solidi C,9:658-661 2012
M. Orihara, S. Yagi, Y. Hijikata and H. Yaguchi -
Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
,Materials Science Forum,706-709:2916-2921 2012
K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi -
Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-doped GaAs
,Applied Physics Express,5:111201-111203 2012
K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi -
RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)
,Physica Status Solidi C,9:658-661 2012
M. Orihara, S. Yagi, Y. Hijikata, and H. Yaguchi -
High-density quantum dot superlattice for application to high-efficiency solar cells
,Physca Status Solidi C:619-621 201011
R. Oshima, Y. Okada, A. Takata, S. Yagi, K. Akahane, -
Surface bismuth removal after Bi nanoline encapsulation in silicon
,Surface Science,595(1-3):L311-L317 200512
S. Yagi, W. Yashiro, K. Sakamoto, K. Miki -
Substitutional C Incorporation into Si1-yCy Alloys Using Novel Carbon Source, 1,3-Disilabutane
,Jpn. J. Appl. Phys.,43:4153 200407
S. Yagi, K. Abe, A. Yamada and M. Konagai -
C Stability in Si1-yCy Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
,Jpn. J. Appl. Phys.,42(4R):1499 200304
S. Yagi, K. Abe, A. Yamada and M. Konagai -
Phosphorous Doping of Strain-Induced Si1-yCy Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
,Jpn. J. Appl. Phys.,41:2472-2475 200204
S. Yagi, K. Abe, T. Okabayashi, Y. Yoneyama, Akira Yamada and M. Konagai -
Growth and characterization of phosphorus doped Si1−yCy alloy grown by photo- and plasma-CVD at very low temperature
,Materials Science and Engineering,89(1-3):303-305 200202
K. Abe, S. Yagi, T. Okabayashi, A. Yamada, M. Konagai -
Characterization of Tensile Strained Si1-yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
,Jpn. J. Appl. Phys.,40:4440 200107
K. Abe, S. Yagi, T. Okabayashi, A. Yamada and M. Konagai -
Epitaxial Growth of Si1-yCy Film by Low Temperature Chemical Vapor Deposition
,Jpn. J. Appl. Phys.,39:L1078 2000
S. Yagi, K. Abe, A. Yamada, M. Konagai - Presentation
-
Siをイオン注入したn-GaNの二波長励起PL測定 ~ BGEエネルギー依存性 ~
2023年第84回応用物理学会秋季学術講演会,第84回応用物理学会秋季学術講演会予稿集:21p-P07-2 202309
徳田 大鷹、鎌田 憲彦、八木 修平、矢口 裕之 -
中間バンドをトンネル接合したタンデム太陽電池構造の提案とサブセル伝導帯間伝導電流の検証
2023年第84回応用物理学会秋季学術講演会,第84回応用物理学会秋季学術講演会予稿集:20p-P06-1 202309
中尾 蒼矢、八木 修平、樗木 悠亮、岡田 至崇、宮下 直也、矢口 裕之 -
Conversion Efficiency Analysis of Tandem Solar Cells with Intermediate Band Tunnel Connection
IEEE 50th Photovoltaic Specialists Conference ,50th IEEE Photovoltaic Specialists Conference Abstracts, ( ):1 202306
Shuhei Yagi and Hiroyuki Yaguchi -
Temperature Dependence of Two-Step Photocurrent Generation in GaAs:N Dilute Nitride Intermediate Band Solar Cells
Compound Semiconductor Week 2023,Compound Semiconductor Week 2023 abstracts, ( ):PI-044 202305
C. Yokokawa, S. Yagi, Y. Shoji, Y. Okada, H. Yaguchi -
Effects of carrier blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells
The 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33),Abstracts of 33rd International Photovoltaic Science and Engineering Conference:TuO-42c-04 202211
Shuhei Yagi, Shun Numata, Yasushi Shoji, Yoshitaka Okada and Hiroyuki Yaguchi -
Photocurrent enhancement by below bandgap excitation in GaPN
The 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33),Abstracts of 33rd International Photovoltaic Science and Engineering Conference:TiP-42-02 202211
Abdul Qayoom, Sanjida Fedous, Shuhei Yagi and Hiroyuki Yaguchi -
Photoluminescence Intensity Change of GaPN by Laser Irradiation
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019) 201909
Sultan Md. Zamil, Akinori Shiroma, Shuhei Yagi, Kengo Takamiya, and Hiroyuki Yaguchi -
Fabrication of Cubic InN Nanowires on GaN V-Groove Structures
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019) 201909
Yusuke Nishimura, Shuhei Yagi, and Hiroyuki Yaguchi -
Two-Wavelength Excited Photoluminescence Study of Upconversion Photoluminescence from GaPN alloys
The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 201907
Hiroyuki Yaguchi, Wataru Takahashi, Kengo Takamiya, Shuhei Yagi, Norihiko Kamata, Yuji Hazama, Hidefumi Akiyama -
Growth Temperature Dependence of Cubic GaN Step Structures and Cubic InN Dot Arrays Grown on MgO(001) Vicinal Substrates
International Workshop on Nitride Semiconductors (IWN 2018),Abstracts of IWN 2018 201811
K. Okura, K. Takamiya, S. Yagi, H. Yaguchi -
Growth of InGaAs:N δ-doped superlattices for multi-junction solar cells
7th World Conference on Photovoltaic Energy Conversion(WCPEC-7),Abstracts of WCPEC-7 201806
S. Umeda, S. Yagi, N. Miyashita, Y. Okada, H. Yaguchi -
EFFECT OF SOLVENT VAPOR ANNEALING ON ORGANICPHOTOVOLTAICS WITH A NEW TYPE OF SOLUTION PROCESSABLE OLIGOTHIOPHENE-BASED ELECTRONIC DONOR MATERIAL
The 27th International Photovoltaic Science and Engineering Conference,PVSWC-27 abstracts:4ThPo.136 201711
Y. Akiyama, H. Tachibana, R. Azumi, T. Miyadera, M. Chikamatsu,T. Koganezawa, S. Yagi, H. Yaguchi -
FIRST-PRINCIPLES STUDY OF OPTICAL TRANSITIONS IN GALLIUM ARSENIDE:NITROGEN DELTA-DOPED SUPERLATTICES
The 27th International Photovoltaic Science and Engineering Conference,PVSEC-27 abstracts:6ThPo.187 201711
H. Yoshikawa, S. Yagi, H. Yaguchi -
INFLUENCE OF NITROGEN ATOMIC ARRANGEMENT IN GAASN ALLOYS ON BAND GAP ENERGY
The 27th International Photovoltaic Science and Engineering Conference,PVSEC-27 abstracts:6ThPo.190 201711
K. Miyajima, S. Yagi, Y. Shoji, Y. Okada, and H. Yaguchi -
REAL-TIME X-RAY DIFFRACTION ANALYSIS FOR SOLVENT VAPOR ANNEALING PROCESS OF SMALL-MOLECULE/FULLERENE FILMS
The 27th International Photovoltaic Science and Engineering Conference,PVSEC-27 abstracts:4ThPo.143 201711
T. Miyadera, K. Arai, T. Koganezawa, Y. Akiyama,H. Tachibana, Y. Yoshida, M. Chikamatsu, S. Yagi, H. Yaguchi -
Nanostructured Dilute Nitride Alloys for High-Efficiency Solar Cells
International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth,NENCS 2017 abstracts:IN15 201710
S. Yagi, Y. Okada, and H. Yaguchi -
Carrier Recombination levels in Intermediate-Band type GaPN revealed by Time Resolved and Two-Wavelength Excited Photoluminescence
Compound Semiconductor Week 2017,CSW 2017 abstracts 201705
N. Kamata, M. Suetsugu, M.D. Haque ,S. Yagi, H. Yaguchi, F. Karlsson, and P.O. Holtz -
Electrical characterization of n-type GaAs:N δ-doped superlattices
Compound Semiconductor Week 2017,CSW 2017 abstracts 201705
R. Kato, S. Yagi, Y. Okada, and H. Yaguchi -
Properties of dilute nitride pseudo-alloys grown using a nitrogen delta-doping technique
SPIE Photonic West 2017,SPIE 2017 Abstracts 201701
S. Yagi, Y. Okada, and H. Yaguchi -
Effect of Carrier Blocking Layer on Carrier Collection in Intermediate-Band Solar Cells using GaAs:N δ-Doped Superlattice
Photovoltaic Science and Engineering Conference (PVSEC-26),26th Photovoltac Science and Engineering Conference Abstracts 201610
T. Suzuki, S. Yagi, Y. Okada, and H. Yaguchi -
Effect of Low Temperature Growth and a Distributed Bragg Reflector on the emission from Molecular Beam Epitaxy‐Grown Er δ‐doped GaAs
19th International Conference on Molecular Beam Epitaxy ,MBE 2016 Abstracts 201609
K. Takamiya, M. Suto, K. Iimura, S. Yagi, H. Yaguchi -
Growth of InN/GaN Dots on 4H‐SiC(0001) 4° off Vicinal Substrates by Molecular Beam Epitaxy
19th International Conference on Molecular Beam Epitaxy ,MBE 2016 Abstracts 201609
K. Matsuoka, S. Yagi and H. Yaguchi -
Nano‐Structural Characterization of Cubic InN Dots Grown on Single‐Domain Cubic GaN by Transmission Electron Microscopy
19th International Conference on Molecular Beam Epitaxy ,MBE 2016 Abstracts 201609
S. Yagi, K. Ishii and H. Yaguchi -
Self-Organized Growth of Cubic InN Dot Arrays on MgO (001) Vicinal Substrates
Compound Semiconductor Week 2016,Abstract of ISCS 2016 201606
K. Ishii, S. Yagi and H. Yaguchi -
Two-Wavelength Excited Photoluminescence in 4H-SiC Substrate -Dependence on BGE Power Density
Compound Semiconductor Week 2016,CSW 2016 abstracts 201606
K. Kondo, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda and Z. Honda -
Optical Characterization of Carrier Recombination Processes in GaPN by Two- Wavelength Excited Photoluminescence
Compound Semiconductor Week 2016,CSW 2016 abstracts 201606
M. Suetsugu, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, F. Karlsson, and P.-O. Holtz -
Epitaxial Relationship of GaN Grown on GaAs (110) by RF-Molecular Beam Epitaxy
The 11th International Conference on Nitride Semiconductors (ICNS-11) 201509
T. Ikarashi, M. Orihara, S. Yagi, S. kuboya, R. Katayama and H. Yaguchi -
Lateral Alignment of InN Nano-Scale Dots Grown on 4H-SiC(0001) Vicinal Substrates
The 11th International Conference on Nitride Semiconductors(ICNS-11) 201509
S. Mori, S. Yagi, M. Orihara, K. Takamiya and H. Yaguchi -
Optical and Structural Characterization of GaAs:N δ-Doped Superlattices Grown by Molecular Beam Epitaxy
5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2015),Proc. of SemiconNano2015 201509
S. Yagi, Y. Sato, N. Ueyama, T. Suzuki, K. Osada, Y. Okada, and H. Yaguchi -
Molecular Beam Epitaxy Growth of Intermediate Band Material Based on GaAs:N δ-Doped Superlattices
The 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6),Technical Digest of the 6th World Conference on Photovoltaic Energy Conversion:1TuO.7.4 201411
T. Suzuki, K. Osada, S. Yagi, S. Naito, Y. Hijikata, Y. Okada, and H. Yaguchi -
Control of Intermediate Band Configuration in GaAs:N δ-Doped Superlattice
The 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6),Technical Digest of the 6th World Conference on Photovoltaic Energy Conversion:1WePo.1.9 201411
K. Osada, T, Suzuki S. Yagi, S. Naito, Y. Shoji, Y. Okada, Y. Hijikata, and H. Yaguchi -
Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
European Conference on Silicon Carbide & Related Materials 2014 (ECSCRM2014):WE-P-44 201409
Y. Miyano, S. Yagi, Y. Hijikata, H. Yaguchi -
Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry
European Conference on Silicon Carbide & Related Materials 2014 (ECSCRM2014):WE-P-58 201409
D. Goto, S. Yagi, Y. Hijikata, H. Yaguchi -
Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well
The 41st International Symposium on Compound Semiconductors (ISCS2014),Abstracts of the 41st International Symposium on Compound Semiconductors:P48 201405
Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi -
Resonant tunneling of electrons through cubic-InN quantum dots embedded in GaN
The 41 st International Symposium on Compound Semiconductors (ISCS2014),Abstracts of the 41 st International Symposium on Compound Semiconductors:P45 201405
S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, H. Yaguchi -
Intermediate band solar cells based on GaAs:N delta-doped superlattices
4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano),Abstracts of SemiconNano 2013:Session XVIII:I-35 201311
S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada and H. Yaguchi -
irst-Principles Study of an Intermediate Band of GaPN Alloys
Photovoltaic Science and Engineering Conference (PVSEC-23),Technical Digest of 23rd Photovoltaic Science and Engineering Conference 201310
Makoto SaitoK. Sakamoto, S. Yagi, H. Yaguchi -
Fabrication and characterization of intermediate band solar cells using GaAs:N delta-doped superlattice
Photovoltaic Science and Engineering Conference (PVSEC-23),Technical Digest of 23rd Photovoltac Science and Engineering Conference 201310
Shuhei Yagi -
Excitation power dependence of the emission from various N-N pairs in N delta-doped GaAs
4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano),Abstract of SemiconNano2013:Session XVIII:C-18 201310
K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi -
Si Emission into the Oxide Layer during Oxidation of Silicon Carbide
International Conference on Silicon Carbide,Abstracts of ICSCRM2013:Th-2B-4 201310
Y. Hijikata, Y. Akasaka, S. Yagi, and H. Yaguchi -
Optical Absorption by E+ Miniband of GaAs:N Delta-Doped Superlattices
39th IEEE Photovoltaic Specialists Conference (PVSC39),Proceedings of 39th Photovoltaic Specialists Conference:2490 - 2493 201306
S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada and H. Yaguchi -
Stacked Structure of Self-Organized Cubic InN Nano-Scale Dots Grown by Molecular Beam Epitaxy
The 40th International Symposium on Compound Semiconductors (ISCS2013),Abstracts of the 40th ISCS 201305
S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, H. Yaguchi -
Carrier Transport through Resonant Tunneling Structures for Hot Carrier Solar Cells
4th International Workshop on Quantum Nanostructure Solar Cells 201212
Shuhei Yagi -
量子ドット太陽電池に向けた立方晶GaN上への立方晶InNドット配列成長
第3回薄膜太陽電池セミナー,第3回薄膜太陽電池セミナー予稿集 201210
鈴木潤一郎、折原操、八木修平、土方泰斗、矢口裕之 -
Enhancement of High Energy Band Optical Transition in GaAs:N delta doped superlattices for Intermediate Band Solar Cells
International Union of Materials Research Societies-International Conference on Electronic Materials (IUMRS-ICEM):A-1-P26-014 201209
Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe and Hiroyuki Yaguchi -
RF-MBE growth of cubic InN quantum dots on cubic GaN
The 17th International Conference on Molecular Beam Epitaxy,Abstracts of the 17th International Conference on Molecular Beam Epitaxy:MoP-24 201209
Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata and Hiroyuki Yaguchi -
Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
The 17th International Conference on Molecular Beam Epitaxy,Abstracts of the 17th International Conference on Molecular Beam Epitaxy:MoP-21 201209
R. G. Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama and Hiroyuki Yaguchi -
Optically assisted IV effect in a GaAs/AlGaAs resonant tunnel diode
International Workshop on High Efficiency Materials for Photovoltaics (HEMP) 2012 201209
Shuhei Yagi -
MBE法によるGaAs(001)基板上へのErGaAs混晶の成長
2012年秋季 第73回応用物理学会学術講演会,2012年秋季 第73回応用物理学会学術講演会予稿集:12p-PB11-16 201209
金日国，八木修平，土方泰斗，窪谷茂幸，尾鍋研太郎，片山竜二，矢口裕之 -
Model calculations of SiC oxide growth rates at sub-atmospheric pressures
European Conference on Silicon Carbide & Related Materials 201209
Y. Hijikata, S. Yagi, H. Yaguchi, S. Yoshida -
Analysis of the Energy Structure of Nitrogen Delta-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells
38th IEEE Photovoltaic Specialists Conference,Proceedings of the 38th IEEE Photovoltaic Specialists Conference:000083-000086 201206
Shunsuke Noguchi, Shuhei Yagi, Yasuto Hijikata, Kentaro Onabe, Shigeyuki Kuboya and Hiroyuki Yaguchi -
Application of Quantum Nanostructures to High-Efficiency Solar Cells
2012年 第59回応用物理学関係連合講演会 "Japan-Korea Symposium on Photovoltaics",第59回応用物理学関係連合講演会予稿集:15p-A1-6 201203
S. Yagi and Y. Okada -
EFFECT OF THERMAL CURRENT AT SELECTIVE CONTACTS USING RESONANT TUNNELING STRUCTURES ON PERFORMANCE OF HOT CARRIER SOLAR CELLS
The 21st International Photovoltaic Science and Engineering Conference ,Technical Digest of the 21st International Photovoltaic Science and Engineering Conference :2D-4P-04 201112
Shuhei Yagi, Yasuto Hijikata, Yoshitaka Okada, Hiroyuki Yaguchi -
Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs
3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures 201109
K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi -
Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
7th International Conference on Processing & Manufacturing of Advanced Materials 201108
K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi -
RF-MBE Growth of Semipolar InN(10-13) and InGaN(10-13) on GaAs(110)
9th International Conference on Nitride Semiconductors,Abstracts of the 9th International Conference on Nitride Semiconductors:PD3.19 201107
M. Orihara, S. Yagi, Y. Hijikata, H. Yaguchi -
Quantum Well Double Barrier Resonant Tunneling Structures for Selective Contacts of Hot Carrier Solar Cells
37th IEEE Photovoltaic Specialists Conference,Proc. of 37th IEEE Photovoltaic Specialists Conference:003309 201106
S. Yagi, Y. Hijikata, Y. Okada, H. Yaguchi -
Fabrication of Resonant Tunneling Structures for Selective Energy Contact of Hot Carrier Solar Cell Based on III-V Semiconductors
35th IEEE Photovoltaic Specialists Conference,Proceedings of the 35th IEEE Photovoltaic Specialists Conference:001213-001216 201006
S. Yagi and Y. Okada -
Recent Progress on High-Efficiency Quantum Dot Solar Cells
Nanophotonics2010 201005
Shuhei Yagi, Yoshitaka Okada -
Recent Progress on Quantum Dot Solar Cell
2nd International Symposium on Innovative Solar Cells,Abstracts of 2nd International Symposium on Innovative Solar Cells:79 200912
S. Yagi, R. Oshima, Y. Okada -
Evaluation of Resonant Tunneling Structures for Selective Energy Contacts of Hot Carrier Solar Cells
Workshop on Information, Nano and Photonics Technology 2009,Abstract of Workshop on Information, Nano and Photonics Technology 2009 200912
S. Yagi, R. Oshima, Y. Okada -
EVALUATION OF SELECTIVE ENERGY CONTACT FOR HOT CARRIER SOLAR CELLS BASED ON III-V SEMICONDUCTORS
34th IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE,Proceedings of the 34st IEEE Photovoltaic Specialists Conference:540 200906
S. Yagi, R. Oshima, Y. Okada -
Upconversion Luminescence from GaPN Alloys with Various N Compositions
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019)
Kengo Takamiya, Wataru Takahashi, Shuhei Yagi, Norihiko Kamata, Yuji Hazama, Hidefumi Akiyama, and Hiroyuki Yaguchi -
Growth of InN nanocolumns using a cubic GaN interlayer by RF-MBE
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019)
Rikiya Onuma, Shuhei Yagi, and Hiroyuki Yaguchi