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YAGI Shuhei

Faculty: Graduate School of Science and Engineering TEL:
Position: Associate Professor ■FAX:
Address: 255 Shimo-Okubo, Sakura-ku, Saitama City, Saitama 338-8570, JAPAN ■Mail Address:
■Web site:

Profile

Assigned Class

Faculty of Engineering

Research Field

Semiconductor engineering
keyword:Semiconductor engineering , Crystal Growth , Solar cells

Academic Background

Graduate School
Tokyo Institute of Technology , (Doctor course , Department of Physical Electronics) , 2004(Completed)
Tokyo Institute of Technology , (Master course , Department of Physical Electronics) , 2001(Completed)
College
University of Electro-Communications , (Department of Electronics) , 1999(Graduated)
Degree
Doctor of Engineering , Tokyo Institute of Technology
Master of Engineering , Tokyo Institute of Technology

Research

Books, Articles, etc.

Articles
Detection of Nonradiative Recombination Centers in GaPN by Combining Two-Wavelength Excited Photoluminescence and Time-Resolved Photoluminescence
,Phisica Status Solidi B,258:2100119 2021
Sanjida Ferdous,Hiroki Iwai,Norihiko Kamata,Hiroyuki Yaguchi,Shuhei Yagi

Activation of two dopants, Bi and Er in δ-doped layer in Si crystal
,Nano Futures,5:045005 2021
Koichi Murata, Shuhei Yagi, Takashi Kanazawa, Satoshi Tsubomatsu, Christopher Kirkham, Koh-ichi Nittoh, David R Bowler and Kazushi Miki

Detection of Nonradiative Recombination Centers in GaPN(N:0.105%) by Below-Gap Excitation Light
,Physica Status Solidi B,257(2):1900377 2020
Sanjida Fedous, Norihiko Kamata, Shuhei Yagi, and Hiroyuki Yaguchi

Spectral Change of E- Band Emission in a GaAs:N delta-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation
,Journal of ELECTRONIC MATERIALS,49(2):1550 2020
Md. Dulal Haque, Norihiko Kamata, A.Z.M. Touhidul Islam, Shuhei Yagi, and Hiroyuki Yaguchi

Photoluminescence intensity change of GaP1−xNx alloys by laser irradiation
,AIP Advances,10: 095302 2020
Md. Zamil Sultan, Akinori Shiroma, Shuhei Yagi, Kengo Takamiya, and Hiroyuki Yaguchi

Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N delta-doped superlattice structure
,Optical Materials,89:521-527 2019
Md. D. haque, N. Kamata, A.Z.M. T. Islam, Z. Honda, S. Yagi, H. Yaguchi

Growth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates
,Japanese Journal of Applied Physics,58:SC1051 2019
K. Okura, K. Takamiya, S. Yagi, H. Yaguchi

Nonradiative recombination centers in GaAs:N δ-doped superlattice revealed by two-wavelength-excited photoluminescence
,Journal of Applied Physics,123(16):161426 2018
M.D. Haque, N. Kamata, T. Fukuda, Z. Honda, S. Yagi, and H. Yaguchi, and Y. Okada

Effects of solvent vapor annealing on organic photovoltaics with a new type of solution-processable oligothiophene-based electronic donor material
,Japanese Journal of Applied Physics,57:08RE09 2018
Yuki Akiyama, Hiroaki Tachibana, Reiko Azumi, Tetsuhiko Miyadera, Masayuki Chikamatsu, Tomoyuki Koganezawa, Shuhei Yagi and Hiroyuki Yaguchi

Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation
,Physica Stat. Solidi. B,254:1600566 2017
N. Kamata, M. Suetsugu, D. Haque, S. Yagi, and H. Yaguchi, F. Karlsson, and P.O. Holtz

Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates
,Physica Status Solidi B,254:1600542 2017
K. Ishii, S. Yagi, and H. Yaguchi

Growth of InN/GaN dots on 4H-SiC(0001) 4o off vicinal substrates by molecular beam epitaxy
,Journal of Crystal Growth,477:201-206 2017
K. Matsuoka, S. Yagi, and H. Yaguchi

Photoluminescence Characterization of Carrier Recombination Centers in 4H-SiC Substrates by Utilizing below Gap Excitation
,Materials Science Forum,897:315-318 2017
K. kondo, N. kamata, H. Yaguchi, S. Yagi, T. Fukuda, and Z. Honda

Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells
,Physica Status Solidi B,255(5):201700454(1-4) 2017
K. Takamiya, S. Yagi, H. Y. H. Akiyama, K. Shojiki, T. Tanikawa, and R. Katayama

Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry
,Jounal of Applied Physics,117(9):095306 2015
D. Goto, Y. Hijikata, S. Yagi, and H. Yaguchi

Surface Orientation Dependence of SiC Oxidation Process Studied by In-Situ Spectroscopic Ellipsometry
,Mat. Sci. Forum,821-823:371-374 2015
D. Goto, S. Yagi, Y. Hijikata, and H. Yaguchi

Photoluminescence Study of Oxidation-Induced Stacking Faults
,Mat. Sci. Forum,821-823:328-330 2015
Y. Miyano, S. Yagi, Y. Hijikata, and H. Yaguchi

Control of Intermediate Band Configuration in GaAs:N δ-Doped Superlattice
,Jpn. J. Appl. Phys,54:08KA04 2015
K. Osada, T. Suzuki, S. Yagi, S. Naitoh, Y. Shoji, H. Hijikata, Y. Okada, and H. Yaguchi

Molecular beam epitaxial growth of intermediate band materials based on GaAs:N δ-doped superlattices
,Jpn. J. Appl. Phys.,54:08KA07 2015
T. Suzuki, K. Osada, S. Yagi, S. Naitoh, Y. Shoji, H. Hijikata, Y. Okada, and H. Yaguchi

Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
,AIP Advances,5:127116 2015
Y. Miyano, R. Asafuji, S. Yagi, Y. Hijikata, and H. Yaguchi

Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy
,Japanese Journal of Applied Physics,54:051201 2015
R. G. Jin, S. Yagi, Y. Hijikata, and H. Yaguchi

Enhanced optical absorption due to E+-related band transition in GaAs:N delta-doped superlattices
,Applied Physics Express,7(10):102301 2014
S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, and H. Yaguchi

Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys
,Phys. Status Solidi A,vol. 211, No. 4:pp752-755 2014
W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi

Staked Structure of Self-Organized Cubic InN Nano-Dots Grown by Molecular Beam Epitaxy
,Phys. Status Solidi C,vol. 10:pp. 1545-1548 2013
S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata and H. Yaguchi

Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N Delta-Doped Superlattices
,Japanese Journal of Applied Physics,vol. 52:102302 2013
S. Yagi, S. Noguchi, Y. Hijikata, S. kuboya, K. Onabe, and H. Yaguchi

Direct Evidence of Carrier Excitation from Intermediate Band States in GaPN by Two-Wavelength Excited Photoluminescence
,Applied Physics Express,vol. 6:092401 2013
A. Z. M. T. Islam, T. Hanaoka, K. Onabe, S. Yagi, N. Kamada and H. Yaguchi

Analysis of Electronic Structures of Nitrogen Delta-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells
,IEEE Journal of Photovoltaics,vol. 3:pp. 1287-1291 2013
S. Noguchi, S. Yagi, D. Sato, Y. Hijikata, K. Onabe, S. Kuboya and H. Yaguchi

Molecular beam epitaxy of ErGaAs alloys on GaAs (0 0 1) substrates
,Journal of Crystal Growth,vol. 378:pp. 85-87 2013
R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi

RF-MBE growth of cubic InN nano-scale dots on cubic GaN
,Journal of Crystal Growth,vol. 378 :pp. 454-458 2013
J. Suzuki, M. Orihara, S. Yagi, Y. Hijikata, and H. Yaguchi

Model calculations of SiC oxide growth rates at sub-atomospheric pressures using the Si and C emission model
,Materials Science Forum,vols. 740-742:pp. 833-836 2013
Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry
, Journal of Applied Physics,112:024502 2012
K. Kouda, Y. Hijikata, S.Yagi, H. Yaguchi, and S.Yoshida

RF-MBE growth of semipolar InN and InGaN(10-13) on GaAs(110)
,Physica Status Solidi (c),9:658-661 2012
M. Orihara, S. Yagi, Y. Hijikata and H. Yaguchi

Micro-Photoluminescence Study on the Influence of Oxidation on Satacking Faults in 4H-SiC Epilayers
,Applied Physics Express,5:051302-051305 2012
H. Yamagata, S. Yagi, Y. Hijikata and H. Yaguchi

Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
,Materials Science Forum,706-709:2916-2921 2012
K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi

Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-doped GaAs
,Applied Physics Express,5:111201-111203 2012
K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi

Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
,Mater. Sci. Forum,706-7009:2916-2921 2012
K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi

RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)
,Phys. Status Solidi C,9:658 661 2012
M. Orihara, S. Yagi, Y. Hijikata, and H. Yaguchi

High-density quantum dot superlattice for application to high-efficiency solar cells
,Physca Status Solidi C:619-621 2010
R. Oshima, Y. Okada, A. Takata, S. Yagi, K. Akahane,

Presentation
Photoluminescence Intensity Change of GaPN by Laser Irradiation
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019) 201909
Sultan Md. Zamil, Akinori Shiroma, Shuhei Yagi, Kengo Takamiya, and Hiroyuki Yaguchi

Fabrication of Cubic InN Nanowires on GaN V-Groove Structures
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019) 201909
Yusuke Nishimura, Shuhei Yagi, and Hiroyuki Yaguchi

Two-Wavelength Excited Photoluminescence Study of Upconversion Photoluminescence from GaPN alloys
The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) 201907
Hiroyuki Yaguchi, Wataru Takahashi, Kengo Takamiya, Shuhei Yagi, Norihiko Kamata, Yuji Hazama, Hidefumi Akiyama

Growth Temperature Dependence of Cubic GaN Step Structures and Cubic InN Dot Arrays Grown on MgO(001) Vicinal Substrates
International Workshop on Nitride Semiconductors (IWN 2018),Abstracts of IWN 2018 201811
K. Okura, K. Takamiya, S. Yagi, H. Yaguchi

Growth of InGaAs:N δ-doped superlattices for multi-junction solar cells
7th World Conference on Photovoltaic Energy Conversion(WCPEC-7),Abstracts of WCPEC-7 201806
S. Umeda, S. Yagi, N. Miyashita, Y. Okada, H. Yaguchi

EFFECT OF SOLVENT VAPOR ANNEALING ON ORGANICPHOTOVOLTAICS WITH A NEW TYPE OF SOLUTION PROCESSABLE OLIGOTHIOPHENE-BASED ELECTRONIC DONOR MATERIAL
The 27th International Photovoltaic Science and Engineering Conference,PVSWC-27 abstracts:4ThPo.136 201711
Y. Akiyama, H. Tachibana, R. Azumi, T. Miyadera, M. Chikamatsu,T. Koganezawa, S. Yagi, H. Yaguchi

FIRST-PRINCIPLES STUDY OF OPTICAL TRANSITIONS IN GALLIUM ARSENIDE:NITROGEN DELTA-DOPED SUPERLATTICES
The 27th International Photovoltaic Science and Engineering Conference,PVSEC-27 abstracts:6ThPo.187 201711
H. Yoshikawa, S. Yagi, H. Yaguchi

INFLUENCE OF NITROGEN ATOMIC ARRANGEMENT IN GAASN ALLOYS ON BAND GAP ENERGY
The 27th International Photovoltaic Science and Engineering Conference,PVSEC-27 abstracts:6ThPo.190 201711
K. Miyajima, S. Yagi, Y. Shoji, Y. Okada, and H. Yaguchi

REAL-TIME X-RAY DIFFRACTION ANALYSIS FOR SOLVENT VAPOR ANNEALING PROCESS OF SMALL-MOLECULE/FULLERENE FILMS
The 27th International Photovoltaic Science and Engineering Conference,PVSEC-27 abstracts:4ThPo.143 201711
T. Miyadera, K. Arai, T. Koganezawa, Y. Akiyama,H. Tachibana, Y. Yoshida, M. Chikamatsu, S. Yagi, H. Yaguchi

Nanostructured Dilute Nitride Alloys for High-Efficiency Solar Cells
International Symposium on Novel Energy Nanomaterials, Catalysts and Surfaces for Future Earth,NENCS 2017 abstracts:IN15 201710
S. Yagi, Y. Okada, and H. Yaguchi

Carrier Recombination levels in Intermediate-Band type GaPN revealed by Time Resolved and Two-Wavelength Excited Photoluminescence
Compound Semiconductor Week 2017,CSW 2017 abstracts 201705
N. Kamata, M. Suetsugu, M.D. Haque ,S. Yagi, H. Yaguchi, F. Karlsson, and P.O. Holtz

Electrical characterization of n-type GaAs:N δ-doped superlattices
Compound Semiconductor Week 2017,CSW 2017 abstracts 201705
R. Kato, S. Yagi, Y. Okada, and H. Yaguchi

Properties of dilute nitride pseudo-alloys grown using a nitrogen delta-doping technique
SPIE Photonic West 2017,SPIE 2017 Abstracts 201701
S. Yagi, Y. Okada, and H. Yaguchi

Effect of Carrier Blocking Layer on Carrier Collection in Intermediate-Band Solar Cells using GaAs:N δ-Doped Superlattice
Photovoltaic Science and Engineering Conference (PVSEC-26),26th Photovoltac Science and Engineering Conference Abstracts 201610
T. Suzuki, S. Yagi, Y. Okada, and H. Yaguchi

Effect of Low Temperature Growth and a Distributed Bragg Reflector on the emission from Molecular Beam Epitaxy‐Grown Er δ‐doped GaAs
19th International Conference on Molecular Beam Epitaxy ,MBE 2016 Abstracts 201609
K. Takamiya, M. Suto, K. Iimura, S. Yagi, H. Yaguchi

Growth of InN/GaN Dots on 4H‐SiC(0001) 4° off Vicinal Substrates by Molecular Beam Epitaxy
19th International Conference on Molecular Beam Epitaxy ,MBE 2016 Abstracts 201609
K. Matsuoka, S. Yagi and H. Yaguchi

Nano‐Structural Characterization of Cubic InN Dots Grown on Single‐Domain Cubic GaN by Transmission Electron Microscopy
19th International Conference on Molecular Beam Epitaxy ,MBE 2016 Abstracts 201609
S. Yagi, K. Ishii and H. Yaguchi

Self-Organized Growth of Cubic InN Dot Arrays on MgO (001) Vicinal Substrates
Compound Semiconductor Week 2016,Abstract of ISCS 2016 201606
K. Ishii, S. Yagi and H. Yaguchi

Two-Wavelength Excited Photoluminescence in 4H-SiC Substrate -Dependence on BGE Power Density
Compound Semiconductor Week 2016,CSW 2016 abstracts 201606
K. Kondo, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda and Z. Honda

Optical Characterization of Carrier Recombination Processes in GaPN by Two- Wavelength Excited Photoluminescence
Compound Semiconductor Week 2016,CSW 2016 abstracts 201606
M. Suetsugu, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, F. Karlsson, and P.-O. Holtz

Optical and Structural Characterization of GaAs:N δ-Doped Superlattices Grown by Molecular Beam Epitaxy
5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures 201509
S. Yagi, Y. Sato, N. Ueyama, T. Suzuki1, K. Osada, Y. Okada, and H. Yaguchi

Epitaxial Relationship of GaN Grown on GaAs (110) by RF-Molecular Beam Epitaxy”, The 11th International Conference on Nitride Semiconductors
The 11th International Conference on Nitride Semiconductors 201509
T. Ikarashi, M. Orihara, S. Yagi, S. kuboya, R. Katayama and H. Yaguchi

Lateral Alignment of InN Nano-Scale Dots Grown on 4H-SiC(0001) Vicinal Substrates”, The 11th International Conference on Nitride Semiconductors
The 11th International Conference on Nitride Semiconductors 201509
S. Mori, S. Yagi, M. Orihara, K. Takamiya and H. Yaguchi

Lateral alignment of InN nano-scale dots grown on 4H-SiC(0001) vicinal substrates
11th International Conference on Nitride Semiconductors (ICNS-11),Proc. of ICNS-11 201509
S. Mori, S. Yagi, M. Orihara, K. Takamkiya, H. Yaguchi

Optical and Structural Characterization of GaAs:N δ-Doped Superlattices Grown by Molecular Beam Epitaxy
5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano 2015),Proc. of SemiconNano2015 201509
S. Yagi, Y. Sato, N. Ueyama, T. Suzuki, K. Osada, Y. Okada, and H. Yaguchi

Molecular Beam Epitaxy Growth of Intermediate Band Material Based on GaAs:N δ-Doped Superlattices
The 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6),Technical Digest of the 6th World Conference on Photovoltaic Energy Conversion:1TuO.7.4 201411
T. Suzuki, K. Osada, S. Yagi, S. Naito, Y. Hijikata, Y. Okada, and H. Yaguchi

Control of Intermediate Band Configuration in GaAs:N δ-Doped Superlattice
The 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6),Technical Digest of the 6th World Conference on Photovoltaic Energy Conversion:1WePo.1.9 201411
K. Osada, T, Suzuki S. Yagi, S. Naito, Y. Shoji, Y. Okada, Y. Hijikata, and H. Yaguchi

Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
European Conference on Silicon Carbide & Related Materials 2014 (ECSCRM2014):WE-P-44 201409
Y. Miyano, S. Yagi, Y. Hijikata, H. Yaguchi

Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry
European Conference on Silicon Carbide & Related Materials 2014 (ECSCRM2014):WE-P-58 201409
D. Goto, S. Yagi, Y. Hijikata, H. Yaguchi

Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well
The 41st International Symposium on Compound Semiconductors (ISCS2014),Abstracts of the 41st International Symposium on Compound Semiconductors:P48 201405
Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi

Resonant tunneling of electrons through cubic-InN quantum dots embedded in GaN
The 41 st International Symposium on Compound Semiconductors (ISCS2014),Abstracts of the 41 st International Symposium on Compound Semiconductors:P45 201405
S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, H. Yaguchi

Intermediate band solar cells based on GaAs:N delta-doped superlattices
4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano),Abstracts of SemiconNano 2013:Session XVIII:I-35 201311
S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada and H. Yaguchi

irst-Principles Study of an Intermediate Band of GaPN Alloys
Photovoltaic Science and Engineering Conference (PVSEC-23),Technical Digest of 23rd Photovoltaic Science and Engineering Conference 201310
Makoto SaitoK. Sakamoto, S. Yagi, H. Yaguchi

Fabrication and characterization of intermediate band solar cells using GaAs:N delta-doped superlattice
Photovoltaic Science and Engineering Conference (PVSEC-23),Technical Digest of 23rd Photovoltac Science and Engineering Conference 201310
Shuhei Yagi

Excitation power dependence of the emission from various N-N pairs in N delta-doped GaAs
4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano),Abstract of SemiconNano2013:Session XVIII:C-18 201310
K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi

Si Emission into the Oxide Layer during Oxidation of Silicon Carbide
International Conference on Silicon Carbide,Abstracts of ICSCRM2013:Th-2B-4 201310
Y. Hijikata, Y. Akasaka, S. Yagi, and H. Yaguchi

Optical Absorption by E+ Miniband of GaAs:N Delta-Doped Superlattices
39th IEEE Photovoltaic Specialists Conference (PVSC39),Proceedings of 39th Photovoltaic Specialists Conference:2490 - 2493 201306
S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada and H. Yaguchi

Stacked Structure of Self-Organized Cubic InN Nano-Scale Dots Grown by Molecular Beam Epitaxy
The 40th International Symposium on Compound Semiconductors (ISCS2013),Abstracts of the 40th ISCS 201305
S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, H. Yaguchi

Carrier Transport through Resonant Tunneling Structures for Hot Carrier Solar Cells
4th International Workshop on Quantum Nanostructure Solar Cells 201212
Shuhei Yagi

量子ドット太陽電池に向けた立方晶GaN上への立方晶InNドット配列成長
第3回薄膜太陽電池セミナー,第3回薄膜太陽電池セミナー予稿集 201210
鈴木潤一郎、折原操、八木修平、土方泰斗、矢口裕之

Enhancement of High Energy Band Optical Transition in GaAs:N delta doped superlattices for Intermediate Band Solar Cells
International Union of Materials Research Societies-International Conference on Electronic Materials (IUMRS-ICEM):A-1-P26-014 201209
Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe and Hiroyuki Yaguchi

RF-MBE growth of cubic InN quantum dots on cubic GaN
The 17th International Conference on Molecular Beam Epitaxy,Abstracts of the 17th International Conference on Molecular Beam Epitaxy:MoP-24 201209
Junichiro Suzuki, Misao Orihara, Shuhei Yagi, Yasuto Hijikata and Hiroyuki Yaguchi

Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
The 17th International Conference on Molecular Beam Epitaxy,Abstracts of the 17th International Conference on Molecular Beam Epitaxy:MoP-21 201209
R. G. Jin, Shuhei Yagi, Yasuto Hijikata, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama and Hiroyuki Yaguchi

Optically assisted IV effect in a GaAs/AlGaAs resonant tunnel diode
International Workshop on High Efficiency Materials for Photovoltaics (HEMP) 2012 201209
Shuhei Yagi

MBE法によるGaAs(001)基板上へのErGaAs混晶の成長
2012年秋季 第73回応用物理学会学術講演会,2012年秋季 第73回応用物理学会学術講演会予稿集:12p-PB11-16 201209
金日国,八木修平,土方泰斗,窪谷茂幸,尾鍋研太郎,片山竜二,矢口裕之

Model calculations of SiC oxide growth rates at sub-atmospheric pressures
European Conference on Silicon Carbide & Related Materials 201209
Y. Hijikata, S. Yagi, H. Yaguchi, S. Yoshida

Analysis of the Energy Structure of Nitrogen Delta-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells
38th IEEE Photovoltaic Specialists Conference,Proceedings of the 38th IEEE Photovoltaic Specialists Conference:000083-000086 201206
Shunsuke Noguchi, Shuhei Yagi, Yasuto Hijikata, Kentaro Onabe, Shigeyuki Kuboya and Hiroyuki Yaguchi

Application of Quantum Nanostructures to High-Efficiency Solar Cells
2012年 第59回応用物理学関係連合講演会 "Japan-Korea Symposium on Photovoltaics",第59回応用物理学関係連合講演会予稿集:15p-A1-6 201203
S. Yagi and Y. Okada

EFFECT OF THERMAL CURRENT AT SELECTIVE CONTACTS USING RESONANT TUNNELING STRUCTURES ON PERFORMANCE OF HOT CARRIER SOLAR CELLS
The 21st International Photovoltaic Science and Engineering Conference ,Technical Digest of the 21st International Photovoltaic Science and Engineering Conference :2D-4P-04 201112
Shuhei Yagi, Yasuto Hijikata, Yoshitaka Okada, Hiroyuki Yaguchi

Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs
3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures 201109
K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi

Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
7th International Conference on Processing & Manufacturing of Advanced Materials 201108
K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi

RF-MBE Growth of Semipolar InN(10-13) and InGaN(10-13) on GaAs(110)
9th International Conference on Nitride Semiconductors,Abstracts of the 9th International Conference on Nitride Semiconductors:PD3.19 201107
M. Orihara, S. Yagi, Y. Hijikata, H. Yaguchi

Quantum Well Double Barrier Resonant Tunneling Structures for Selective Contacts of Hot Carrier Solar Cells
37th IEEE Photovoltaic Specialists Conference,Proc. of 37th IEEE Photovoltaic Specialists Conference:003309 201106
S. Yagi, Y. Hijikata, Y. Okada, H. Yaguchi

Fabrication of Resonant Tunneling Structures for Selective Energy Contact of Hot Carrier Solar Cell Based on III-V Semiconductors
35th IEEE Photovoltaic Specialists Conference,Proceedings of the 35th IEEE Photovoltaic Specialists Conference:001213-001216 201006
S. Yagi and Y. Okada

Recent Progress on High-Efficiency Quantum Dot Solar Cells
Nanophotonics2010 201005
Shuhei Yagi, Yoshitaka Okada

Recent Progress on Quantum Dot Solar Cell
2nd International Symposium on Innovative Solar Cells,Abstracts of 2nd International Symposium on Innovative Solar Cells:79 200912
S. Yagi, R. Oshima, Y. Okada

Evaluation of Resonant Tunneling Structures for Selective Energy Contacts of Hot Carrier Solar Cells
Workshop on Information, Nano and Photonics Technology 2009,Abstract of Workshop on Information, Nano and Photonics Technology 2009 200912
S. Yagi, R. Oshima, Y. Okada

EVALUATION OF SELECTIVE ENERGY CONTACT FOR HOT CARRIER SOLAR CELLS BASED ON III-V SEMICONDUCTORS
34th IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE,Proceedings of the 34st IEEE Photovoltaic Specialists Conference:540 200906
S. Yagi, R. Oshima, Y. Okada

Upconversion Luminescence from GaPN Alloys with Various N Compositions
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019)
Kengo Takamiya, Wataru Takahashi, Shuhei Yagi, Norihiko Kamata, Yuji Hazama, Hidefumi Akiyama, and Hiroyuki Yaguchi

Growth of InN nanocolumns using a cubic GaN interlayer by RF-MBE
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019)
Rikiya Onuma, Shuhei Yagi, and Hiroyuki Yaguchi